Fabrication and Properties of AlGaN/GaInN Double Heterostructure Grown on 6H-SiC(0001)Si

ABSTRACTAlGaN/GalnN double heterostructures (DH) were fabricated by metalorganic vapor phase epitaxy on the (0001)Si 6H-SiC substrate. A cleaved edge shows a very flat surface with roughness on the order of one monolayer. Stimulated emission and laser action from the UV to blue region was observed by optical pumping at room temperature (RT). The threshold power density was 27KW/cm2 which is smaller than that of the same structure grown on a sapphire (0001) substrate by a factor of four. A AlGaN/GalnN DH UV light emitting diode, using undoped GalnN is fabricated. The power efficiency and spectra width of this LED is comparable or superior to that of an LED having the same structure but grown on sapphire.

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Субмонослойные квантовые точки InGaAs/GaAs, выращенные методом МОС-гидридной эпитаксии

Физика и техника полупроводников ◽

10.21883/ftp.2019.08.48011.9124 ◽

2019 ◽

Vol 53 (8) ◽

pp. 1159

Author(s):

В.Я. Алешкин ◽

Н.В. Байдусь ◽

А.А. Дубинов ◽

К.Е. Кудрявцев ◽

С.М. Некоркин ◽

...

Keyword(s):

Quantum Dots ◽

Quantum Dot ◽

Room Temperature ◽

Optical Pumping ◽

Liquid Nitrogen Temperature ◽

Stimulated Emission ◽

Threshold Power ◽

Gaas Substrates ◽

Dot Density ◽

Hydride Epitaxy

AbstractThe mode of the growth of InGaAs quantum dots by MOS-hydride epitaxy on GaAs substrates without a deviation and with a deviation of 2° is selected for laser structures emitting at wavelengths above 1.2 μm at room temperature. As a result, a quantum-dot density of 4 × 10^10 cm^–2 is achieved. Stimulated emission is observed in laser structures with seven layers of quantum dots at a wavelength of 1.06 μm at liquid-nitrogen temperature. The threshold power density of optical pumping is about 5 kW/cm^2.

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Room Temperature Laser Action in Laterally Overgrown GaN Pyramids on (111) Silicon

MRS Internet Journal of Nitride Semiconductor Research ◽

10.1557/s1092578300003343 ◽

1999 ◽

Vol 4 (S1) ◽

pp. 739-744 ◽

Cited By ~ 3

Author(s):

S. Bidnyk ◽

B. D. Little ◽

Y. H. Cho ◽

J. Krasinski ◽

J. J. Song ◽

...

Keyword(s):

Room Temperature ◽

Optical Pumping ◽

Laser Action ◽

Chemical Vapor ◽

Pulse Excitation ◽

Organic Chemical ◽

Seeding Layer ◽

Light Emitting ◽

Practical Applications ◽

Metal Organic

Single and multi-mode room temperature laser action was observed in GaN pyramids under strong optical pumping. The 5- and 15-micron-wide hexagonal-based pyramids were laterally overgrown on a patterned GaN/AlN seeding layer grown on a (111) silicon substrate by metal-organic chemical vapor deposition. The pyramids were individually pumped, imaged, and spectrally analyzed through a high magnification optical system using a high density pulsed excitation source. We suggest that the cavity formed in a pyramid is of a ring type, formed by total internal reflections of light off the pyramids’ surfaces. The mode spacing of the laser emission was found to be correlated to the size of pyramids. The effects of pyramid geometry and pulse excitation on the nature of laser oscillations inside of the pyramids is discussed. Practical applications of the results for the development of light-emitting pixels and laser arrays are suggested.

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n-Type Diamond Growth by Phosphorus Doping

MRS Proceedings ◽

10.1557/proc-1039-p05-01 ◽

2007 ◽

Vol 1039 ◽

Cited By ~ 2

Author(s):

Hiromitsu Kato ◽

Toshiharu Makino ◽

Satoshi Yamasaki ◽

Hideyo Okushi

Keyword(s):

High Performance ◽

Room Temperature ◽

Light Emission ◽

Uv Light ◽

Light Emitting Diode ◽

Diamond Growth ◽

Phosphorus Doping ◽

Light Emitting ◽

Compensation Ratio ◽

Phosphorus Doped

AbstractPhosphorus doping on (001)-oriented diamond is introduced and compared with results achieved on (111) diamond. Detailed procedures, conditions, doping characteristics, and recent electrical properties of (001) phosphorus-doped diamond films are described. Now the highest mobility is reached to be ∼780 cm2/Vs at room temperature. The carrier compensation ratio, which is still high around 50-80 %, is the most important issues for (001) phosphorus-doped diamond to improve its electrical property. The origin of compensators in phosphorus-doped diamond is investigated, while yet to be identified.Ultraviolet light emitting diode with p-i-n junction structure is also introduced using (001) n-type diamond. A strong UV light emission at around ∼240 nm is observed even at room temperature. High performance of diamond UV-LED is demonstrated.

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Properties of GaN Epitaxial Layer Grown by MOVPE on MgAl2O4 Substrate

MRS Proceedings ◽

10.1557/proc-395-61 ◽

1995 ◽

Vol 395 ◽

Author(s):

A. Kuramata ◽

K. Horino ◽

K. Domen ◽

R. Soejima ◽

H. Sudo ◽

...

Keyword(s):

Optical Pumping ◽

Light Emitting Diode ◽

Optical Cavity ◽

Stimulated Emission ◽

Band Edge ◽

Band Edge Emission ◽

Edge Emission ◽

Laser Applications ◽

Light Emitting ◽

Metal Organic

ABSTRACTWe propose a MgAl2O4 substrate for GaN-based laser diodes. We grew GaN epitaxial layers using metal-organic vapor phase epitaxy on a MgAl2O4 substrate. The GaN on the MgAl2O4 showed a narrow X-ray diffraction peak of 310 arcsec, a photoluminescence dominated by the band-edge emission, and good electronic properties. The optical cavity was fabricated by cleaving the GaN on the MgAl2O4, and the stimulated emission from the cavity using optical pumping was observed. We also fabricated a light emitting diode (LED) with a AlGaN/InGaN double-heterostructure. The electroluminescence was dominated by the band-edge emission of InGaN with a narrow FWHM of 13.5 nm. The characteristics of LED on the MgAl2O4 were comparable to that on a A12O3 substrate. MgAl2O4 is feasible as a substrate for laser applications.

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GaN quantum dot UV light emitting diode

MRS Proceedings ◽

10.1557/proc-798-y1.4 ◽

2003 ◽

Vol 798 ◽

Cited By ~ 1

Author(s):

Jeong-Sik Lee ◽

Satoru Tanaka ◽

Peter Ramvall ◽

Hiroaki Okagawa

Keyword(s):

Quantum Dots ◽

Quantum Dot ◽

Active Layer ◽

Room Temperature ◽

Uv Light ◽

Light Emitting Diode ◽

Current Injection ◽

High Density ◽

Light Emitting ◽

Room Temperature Luminescence

ABSTRACTThe fabrication and evaluation of a UV light-emitting diode (LED) incorporating GaN quantum dots as the active layer is demonstrated. The GaN quantum dots were fabricated on an AlxGa1-xN (x∼0.1) surface using Si as an antisurfactant. Exposing the AlxGa1-xN surface to the Si antisurfactant prior to GaN growth enabled the formation of quantum dots on a surface where growth by the Stranski-Krastanov mode would not be possible. A fairly high density of dots (1010-1011 cm-2) with controllable dot sizes was achieved. Room temperature luminescence at 360 nm was clearly observed during current injection (cw) into an LED structure including the GaN quantum dots. The origin of the electroluminescence is discussed by comparing it to photoluminescence measurements.

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Ultraviolet light-emitting diode-assisted highly sensitive room temperature NO2 gas sensor for low-temperature solution-processed ZnO/TiO2 nanorods decorated with plasmonic Au nanoparticles

Nanoscale ◽

10.1039/d1nr01001h ◽

2021 ◽

Author(s):

Soon-Hwan Kwon ◽

Tae-Hyeon Kim ◽

Sang-Min Kim ◽

Semi Oh ◽

Kyoung-Kook Kim

Keyword(s):

Gas Sensors ◽

High Performance ◽

Room Temperature ◽

Au Nanoparticles ◽

Light Emitting Diode ◽

Light Emitting ◽

No2 Gas Sensor ◽

Highly Sensitive ◽

Temperature Solution ◽

Semiconducting Metal Oxides

Nanostructured semiconducting metal oxides such as SnO2, ZnO, TiO2, and CuO have been widely used to fabricate high performance gas sensors. To improve the sensitivity and stability of gas sensors,...

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Room-temperature electroluminescence from germanium in an Al_03Ga_07As/Ge heterojunction light-emitting diode by Γ-valley transport

Optics Express ◽

10.1364/oe.20.014921 ◽

2012 ◽

Vol 20 (14) ◽

pp. 14921 ◽

Cited By ~ 11

Author(s):

Seongjae Cho ◽

Byung-Gook Park ◽

Changjae Yang ◽

Stanley Cheung ◽

Euijoon Yoon ◽

...

Keyword(s):

Room Temperature ◽

Light Emitting Diode ◽

Light Emitting

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Optimization for white organic light-emitting diode based on DCJTB as color conversion layer

International Journal of Modern Physics B ◽

10.1142/s0217979218502995 ◽

2018 ◽

Vol 32 (27) ◽

pp. 1850299

Author(s):

Pei Wang ◽

Zhen Wang ◽

Ai Chen ◽

Jia-Feng Xie ◽

Xin Zheng

Keyword(s):

Current Efficiency ◽

Current Density ◽

White Light ◽

Power Efficiency ◽

Light Emitting Diode ◽

Light Emitting ◽

Organic Light Emitting Diode ◽

Organic Light ◽

High Efficient ◽

Color Conversion

In this paper, combining phosphorescence and fluorescence to form white light was realized based on DCJTB:PMMA/ITO/NPB/TCTA/FIrpic:TCTA/TPBi/Ir(ppy)3:TPBi/TPBi/Cs2CO3/Al. The effects of red fluorescence on this white light device was studied by adjusting the concentration of DCJTB. The study shows that the device with a DCJTB concentration of 0.7% in the color conversion layer (CCL) generates a peak current efficiency and power efficiency of 23.4 cd ⋅ A[Formula: see text] and 7.5 lm ⋅ W[Formula: see text], respectively. And it is closest to the equal-energy white point of (0.33, 0.33) which shows a CIE (Commission Internationale de L’Eclairage) coordinate of (0.35, 0.43) and a color rendering index (CRI) of 70 at current density of 10 mA ⋅ cm[Formula: see text]. In order to improve the efficiency, we design and fabricate both high efficient and pure white organic light-emitting diode (WOLED) by replacing the single blue emission layer (EML) with double EMLs of FIrpic:TCTA and FIrpic:TPBi. The further study shows that, when the layers of EML is three and the concentration of DCJTB at 0.7%, the device exhibits good performance specifically, at current density of 10 mA ⋅ cm[Formula: see text], the current efficiency of 28.2 cd ⋅ A[Formula: see text] (power efficiency of 10.3 lm ⋅ W[Formula: see text]), and the CIE coordinate of (0.33, 0.31) (CRI of 80.38).

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