scholarly journals Вертикально-излучающий лазер спектрального диапазона 1.55 μm с туннельным переходом на основе слоев n-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InGaAs/p-=SUP=-++-=/SUP=--InAlGaAs

2020 ◽  
Vol 46 (17) ◽  
pp. 21
Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
Н.А. Малеев ◽  
А.А. Блохин ◽  
А.Г. Кузьменков ◽  
...  
Keyword(s):  
Optical Cavity ◽  
Optical Loss ◽  
Cavity Surface ◽  
Wafer Fusion ◽  
Noticeable Increase ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Oxidation Resistant ◽  
Emitting Lasers ◽  
Vertical Cavity

The design of the n++-InGaAs/р++-InGaAs/р++-InAlGaAs tunnel junction (TJ) for 1.55 μm range vertical-cavity surface-emitting lasers (VCSELs), developed by wafer fusion technique of InAlGaAsP/InP optical cavity with AlGaAs/GaAs distributed Bragg reflectors is proposed and realized. The presence of oxidation-resistant InGaAs layers allows the use of molecular-beam epitaxy at all stages of the heterostructure fabrication, including for regrowth of the TJ surface relief. In the case of using the n++-InGaAs/р++-InGaAs/р++-InAlGaAs TJ, a noticeable increase in the internal optical losses compared to the n++/р++-InAlGaAs TJ design was not obtained. The increase in internal optical loss in lasers can be avoided due to Burshtein-Moss effect in n++-InGaAs layers and thickness minimization of р++-InGaAs layer. As a result, the characteristics of fabricated lasers are comparable with characteristics of VCSELs with n++/p++-InAlGaAs TJ with a similar level of mirror losses.

The Effect of a Saturable Absorber in Long-Wavelength Vertical-Cavity Surface-Emitting Lasers Fabricated by Wafer Fusion Technology

2020 ◽  
Vol 46 (12) ◽  
pp. 1257-1262
Author(s):  
S. A. Blokhin ◽  
M. A. Bobrov ◽  
A. A. Blokhin ◽  
A. P. Vasil’ev ◽  
A. G. Kuz’menkov ◽  
...  
Keyword(s):  
Saturable Absorber ◽  
Cavity Surface ◽  
Fusion Technology ◽  
Long Wavelength ◽  
Wafer Fusion ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

scholarly journals Single Mode Photonic Crystal Vertical Cavity Surface Emitting Lasers

2012 ◽  
Vol 2012 ◽  
pp. 1-8 ◽  
Author(s):  
Kent D. Choquette ◽  
Dominic F. Siriani ◽  
Ansas M. Kasten ◽  
Meng Peun Tan ◽  
Joshua D. Sulkin ◽  
...  
Keyword(s):  
Photonic Crystal ◽  
Optical Cavity ◽  
Single Mode ◽  
Periodic Pattern ◽  
Cavity Surface ◽  
Lasing Wavelength ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

We review the design, fabrication, and performance of photonic crystal vertical cavity surface emitting lasers (VCSELs). Using a periodic pattern of etched holes in the top facet of the VCSEL, the optical cavity can be designed to support the fundamental mode only. The electrical confinement is independently defined by proton implantation or oxide confinement. By control of the refractive index and loss created by the photonic crystal, operation in the Gaussian mode can be insured, independent of the lasing wavelength.

scholarly journals Vertical cavity surface emitting lasers of 1.3 μm spectral range based on the InGaAs/InGaAlAs superlattice

2021 ◽  
Vol 2103 (1) ◽  
pp. 012176
Author(s):  
S S Rochas ◽  
L Karachinsky Ya ◽  
A V Babichev ◽  
I I Novikov ◽  
A G Gladyshev ◽  
...  
Keyword(s):  
Active Region ◽  
Spectral Range ◽  
Threshold Current ◽  
Cavity Surface ◽  
Wafer Fusion ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity ◽  
Small Signal Modulation

Abstract Vertical-cavity surface-emitting lasers of 1.3 μm spectral range with the active region based on the InGaAs/InGaAlAs superlattice were studied. VCSEL heterostructure was formed by a wafer-fusion of the heterostructure with an active region and two DBRs grown by molecular-beam epitaxy on InP and GaAs substrates respectively. Fabricated VCSELs have shown threshold current below 1.6 mA and frequency of small signal modulation near 9 GHz at 20°C.

scholarly journals Влияние конструкции резонатора на ширину линии одномодовых вертикально-излучающих лазеров ближнего ИК-диапазона

2018 ◽  
Vol 44 (1) ◽  
pp. 67
Author(s):  
С.А. Блохин ◽  
М.А. Бобров ◽  
А.Г. Кузьменков ◽  
А.А. Блохин ◽  
А.П. Васильев ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optical Cavity ◽  
Single Mode ◽  
Cavity Surface ◽  
Carrier Injection ◽  
Near Ir ◽  
Surface Emitting Lasers ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity

AbstractThe studies of the emission linewidth for single-mode near-IR vertical-cavity surface-emitting lasers with an active region based on InGaAs/AlGaAs quantum wells and different optical microcavity design. For low mirror loss, lasers with a 1λ cavity and carrier injection through distributed Bragg reflectors demonstrate a linewidth of 70 MHz and its growth to 110 MHz with increasing mirror loss (corresponding differential of efficiency ∼0.65 W/A). The design of the optical cavity with carrier injection through intracavity contacts and low-Q composition Bragg lattices reduces the linewidth to 40 MHz in spite of high mirror loss (corresponding differential efficiency of ∼0.6 W/A).

Recent developments in the area of vertical cavity surface emitting lasers

1999 ◽  
Vol 09 (PR2) ◽  
pp. Pr2-3 ◽  
Author(s):  
J. Jacquet ◽  
P. Salet ◽  
A. Plais ◽  
F. Brillouet ◽  
E. Derouin ◽  
...  
Keyword(s):  
Cavity Surface ◽  
Surface Emitting Lasers ◽  
Recent Developments ◽  
Vertical Cavity Surface ◽  
Emitting Lasers ◽  
Vertical Cavity
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