Vertical cavity surface emitting lasers of 1.3 μm spectral range based on the InGaAs/InGaAlAs superlattice
2021 ◽
Vol 2103
(1)
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pp. 012176
Keyword(s):
Abstract Vertical-cavity surface-emitting lasers of 1.3 μm spectral range with the active region based on the InGaAs/InGaAlAs superlattice were studied. VCSEL heterostructure was formed by a wafer-fusion of the heterostructure with an active region and two DBRs grown by molecular-beam epitaxy on InP and GaAs substrates respectively. Fabricated VCSELs have shown threshold current below 1.6 mA and frequency of small signal modulation near 9 GHz at 20°C.
1995 ◽
Vol 1
(2)
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pp. 649-653
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1992 ◽
Vol 4
(11)
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pp. 1192-1194
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1994 ◽
Vol 05
(04)
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pp. 667-730
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1995 ◽
Vol 7
(3)
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pp. 229-231
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