Temperature stability of small-signal modulation response of WGM microlasers with InGaAs/GaAs quantum well-dots in the active region

In this paper, results are presented on III-V quantum well dot microring diode lasers tested at elevated temperatures. To the best of our knowledge, the first uncooled microdisk lasers with diameter of 40 μm with 3-dB bandwidth above 2 GHz at 55°C are demonstrated.

Vertical cavity surface emitting lasers of 1.3 μm spectral range based on the InGaAs/InGaAlAs superlattice

Vertical-cavity surface-emitting lasers of 1.3 μm spectral range with the active region based on the InGaAs/InGaAlAs superlattice were studied. VCSEL heterostructure was formed by a wafer-fusion of the heterostructure with an active region and two DBRs grown by molecular-beam epitaxy on InP and GaAs substrates respectively. Fabricated VCSELs have shown threshold current below 1.6 mA and frequency of small signal modulation near 9 GHz at 20°C.

Effect of Collector Voltage on the Large and Small Signal Modulation Characteristics of 980 nm Transistor Laser

Theoretical analysis of Transistor Laser is carried out and the static and frequency responses for different collector voltages, under common emitter configuration are determined. The threshold current (Ith) is observed as 33mA and it increases linearly with reverse collector to base voltage (VCB). Meanwhile, the output optical power is found to decrease proportionately when VCB is increased. A maximum of 18.7GHz modulation bandwidth is observed when an input base current of 95 mA is applied at a fixed value of VCB (1V). The modulation bandwidth is found to decrease with increase in reverse VCB. The turn on delay increases with collector voltage. However, it decreases with increase in base current.

Оценка вклада поверхностной рекомбинации в микродисковых лазерах с помощью высокочастотной модуляции

Microdisk lasers 10–30 μm in diameter operating at room temperature without thermal stabilization and with an active region based on nanostructures of hybrid dimensionality—quantum wells–dots—are investigated. High-frequency measurements of the microlaser response are performed in the direct small-signal modulation mode, which makes it possible to establish the parameters of the operating speed and analyze their dependence on the microlaser diameter. It is found that the K factor is (0.8 ± 0.2) ns, which corresponds to optical losses of ~6 cm^–1, and no regular dependence on the diameter is observed. It is found that the low-frequency component of the damping coefficient of relaxation oscillations is inversely proportional to the diameter. This character of the dependence evidences a decrease in the carrier lifetime in small-diameter microcavities, which can be associated with the prevalence of nonradiative recombination on their side walls.