Electric Field-Induced Surface Melting of Gold at Room Temperature visualized at Atomic Resolution Using In Situ TEM

2021 ◽  
Author(s):  
Ludvig de Knoop ◽  
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Surface Melting ◽  
Atomic Resolution ◽  
In Situ Tem

scholarly journals Electric Field-Induced Surface Melting of Gold Observed In Situ at Room Temperature and at Atomic Resolution Using TEM

2019 ◽  
Vol 25 (S2) ◽  
pp. 1830-1831 ◽  
Author(s):  
Ludvig de Knoop ◽  
Mikael Juhani Kuisma ◽  
Joakim Löfgren ◽  
Kristof Lodewijks ◽  
Mattias Thuvander ◽  
...  
Keyword(s):  
Electric Field ◽  
Room Temperature ◽  
Surface Melting ◽  
Atomic Resolution

In-Situ Tem Investigation During Thermal Cycling of thin Copper Films

1996 ◽  
Vol 436 ◽  
Author(s):  
R.-M. Keller ◽  
W. Sigle ◽  
S. P. Baker ◽  
O. Kraft ◽  
E. Arzt
Keyword(s):  
Grain Growth ◽  
Room Temperature ◽  
Dislocation Motion ◽  
In Situ Tem ◽  
Copper Films ◽  
Stress Evolution ◽  
Cu Films ◽  
Transmission Electron ◽  
Insight Into

AbstractIn-situ transmission electron microscopy (TEM) was performed to study grain growth and dislocation motion during temperature cycles of Cu films with and without a cap layer. In addition, the substrate curvature method was employed to determine the corresponding stresstemperature curves from room temperature up to 600°C. The results of the in-situ TEM investigations provide insight into the microstructural evolution which occurs during the stress measurements. Grain growth occurred continuously throughout the first heating cycle in both cases. The evolution of dislocation structure observed in TEM supports an explanation of the stress evolution in both capped and uncapped films in terms of dislocation effects.

scholarly journals In Situ TEM Observations of Heavy Ion Damage in Gallium Arsenide

1988 ◽  
Vol 100 ◽  
Author(s):  
M. W. Bench ◽  
I. M. Robertson ◽  
M. A. Kirk
Keyword(s):  
Low Temperature ◽  
Room Temperature ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Heavy Ion ◽  
In Situ Tem ◽  
Accelerator Facility ◽  
Transmission Electron ◽  
Ion Accelerator

ABSTRACTTransmission electron microscopy experiments have been performed to investigate the lattice damage created by heavy-ion bombardments in GaAs. These experiments have been performed in situ by using the HVEN - Ion Accelerator Facility at Argonne National Laboratory. The ion bcorbardments (50 keV Ar+ and Kr+) and the microscopy have been carried out at temperatures rangrin from 30 to 300 K. Ion fluences ranged from 2 × 1011 to 5 × 1013 ions cm−2.Direct-inpact amorphization is observed to occur in both n-type and semi-insulating GaAs irradiated to low ion doses at 30 K and room temperature. The probability of forming a visible defect is higher for low temperature irradiations than for room temperature irradiations. The amorphous zones formed at low temperature are stable to temperatures above 250 K. Post implantation annealing is seen to occur at room temperature for all samples irradiated to low doses until eventually all visible damage disappears.

scholarly journals 2pA_SS3-8Investigations of deformation twinning in sapphire by in situ TEM indentation and atomic-resolution STEM

Microscopy ◽  
2018 ◽  
Vol 67 (suppl_2) ◽  
pp. i22-i22
Author(s):  
Eita Tochigi ◽  
Miao Bin ◽  
Shun Kondo ◽  
Atsutomo Nakamura ◽  
Naoya Shibata ◽  
...  
Keyword(s):  
Deformation Twinning ◽  
Atomic Resolution ◽  
In Situ Tem

In situ TEM study of irradiation-induced transformation in TiNi shape memory alloys

2003 ◽  
Vol 792 ◽  
Author(s):  
X. T. Zu ◽  
F.R. Wan ◽  
S. Zhu ◽  
L. M. Wang
Keyword(s):  
Phase Transformation ◽  
Martensitic Transformation ◽  
Shape Memory Alloys ◽  
Shape Memory ◽  
Electron Irradiation ◽  
Room Temperature ◽  
Critical Voltage ◽  
In Situ Tem ◽  
In Situ Observation

ABSTRACTTiNi shape memory alloy (SMA) has potential applications for nuclear reactors and its phase stability under irradiation is becoming an important topic. Some irradiation-induced diffusion-dependent phase transformations, such as amorphization, have been reported before. In the present work, the behavior of diffusion-independent phase transformation in TiNi SMA was studied by electron irradiation at room temperature. The effect of irradiation on the martensitic transformation of TiNi shape memory alloys was studied by Transmission Electron Microscopy (TEM) with in-situ observation and differential scanning calorimeter (DSC). The results of TEM and DSC measurements show that the microstructure of samples is R phase at room temperature. Electron irradiations were carried out using several different TEM with accelerating voltage of 200 kV, 300 kV, 400 kV and 1000 kV. Also the accelerating voltage in the same TEM was changed to investigate the critical voltage for the effect of irradiation on phase transformation. It was found that a phase transformation occurred under electron irradiation above 320 kV, but never appeared at 300 kV or lower accelerating voltage. Such phase transformation took place in a few seconds of irradiation and was independent of atom diffusion. The mechanism of Electron-irradiation-induced the martensitic transformation due to displacements of atoms from their lattice sites produced by the accelerated electrons.

Specially Designed Sample Holder and In-situ TEM for Gas-Solid Interaction Studies at an Atomic Resolution

2008 ◽  
Vol 14 (S2) ◽  
pp. 790-791
Author(s):  
XF Zhang
Keyword(s):  
New Mexico ◽  
Atomic Resolution ◽  
In Situ Tem ◽  
Sample Holder ◽  
Interaction Studies

Extended abstract of a paper presented at Microscopy and Microanalysis 2008 in Albuquerque, New Mexico, USA, August 3 – August 7, 2008

In-Situ TEM Observation of Physical Degradation of AlGaN/GaN Devices under Applied Electric Field

2012 ◽  
Vol 18 (S2) ◽  
pp. 1872-1873 ◽  
Author(s):  
H. Ghassemi ◽  
A. Lang ◽  
M. Taheri
Keyword(s):  
Electric Field ◽  
Applied Electric Field ◽  
In Situ Tem ◽  
Physical Degradation

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

In-Situ Transmission Elecron Microscopy (TEM) Study of the Sintering of Sputtered Copper Nanoparticles on (001) Copper

1997 ◽  
Vol 3 (S2) ◽  
pp. 401-402
Author(s):  
M. Yeadon ◽  
J.C. Yang ◽  
R.S. Averback ◽  
J.W. Bullard ◽  
D.L. Olynick ◽  
...  
Keyword(s):  
Gas Phase ◽  
Copper Nanoparticles ◽  
Room Temperature ◽  
Copper Substrate ◽  
In Situ Tem ◽  
Single Particles ◽  
Fine Grain ◽  
Structural And Electrical Properties ◽  
Nanophase Materials

The large surface area: volume ratios and fine grain size of nanophase materials give rise to novel and exciting structural and electrical properties that are of considerable scientific and technological interest. Using copper as a model system we have investigated the sintering of sputtered copper nanoparticles (4-20nm diameter) with a copper substrate in a novel UHV in-situ TEM.The nanoparticles were generated in a UHV chamber built into the side of the column by sputtering in 1.5Torr Ar. They were transported into the microscope in the gas phase and deposited on an electron transparent (001) copper foil mounted on a heated support. A typical bright-field (BF) image of the sample immediately after deposition at room temperature is shown in Fig. 1. The particles have assumed a random orientation on the substrate and remain stable for many hours at room temperature. The presence of both single particles and agglomerates of particles is evident in this image and examples are labelled ‘P’ and ‘A’, respectively

Deformation-Induced Nanocrystallization in Al-Rich Metallic Glasses

2006 ◽  
Vol 114 ◽  
pp. 123-132 ◽  
Author(s):  
Nancy Boucharat ◽  
Rainer J. Hebert ◽  
Harald Rösner ◽  
Gerhard Wilde
Keyword(s):  
Metallic Glasses ◽  
Room Temperature ◽  
High Pressure Torsion ◽  
In Situ Tem ◽  
Number Density ◽  
High Number Density ◽  
Glass Forming ◽  
Processing Strategies ◽  
Improved Performance

Deformation-induced nanocrystallization has been investigated in a marginally Al88Y7Fe5 glass forming alloy. Conventional calorimetry and microstructural analyses of materials that have been subjected to high pressure torsion straining (HPT) at room temperature indicate the development of an extremely high number density of small Al nanocrystals. The nanocrystals appear to be distributed homogeneously throughout the sample without any evidence of strong coarsening. Moreover, the comparison between nanocrystallization caused by the application of either HPT, cold-rolling or in-situ TEM tensile straining yielded the identification of the probable mechanisms underlying the formation of nanocrystals. These results form the basis for the development of advanced processing strategies for producing new nanostructures with high nanocrystal number densities which allow increased stability and improved performance.

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