scholarly journals Ion-beam irradiation effects on reactively sputtered CrN layers

2011 ◽  
Vol 5 (1) ◽  
pp. 25-29 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Structural Changes ◽  
Ion Beam ◽  
Xrd Analysis ◽  
Nitrogen Partial Pressure ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Partial Pressures ◽  
Mean Grain Size ◽  
Argon Ions

This paper presents a study of micro-structural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2?10-4, 3.5?10-4 and 5?10-4 mbar), to a total thickness of 260-280 nm. During deposition the substrates were held at 150?C. After deposition the samples were irradiated with argon ions to the fluencies of 1?1015 and 1?1016 ions/cm2, under the vacuum of 7?10-6 mbar. Characterization of the samples structure and morphology were performed by X-ray diffraction (XRD) analysis and cross-sectional transmission electron microscopy (XTEM), and the concentration profiles were determined by Rutheford backscattering (RBS) spectrometry. It was found that the layer composition strongly depends on the nitrogen partial pressure during deposition. A pure stoichiometric CrN phase was achieved for the highest nitrogen partial pressure (5?10-4 mbar). Argon ions irradiation induces micro-structural changes in the CrN layers such as variation of the lattice constants, micro-strain and mean grain size.

scholarly journals Structural, optical and electrical properties of reactively sputtered CrxNy films: Nitrogen influence on the phase formation

2017 ◽  
Vol 11 (1) ◽  
pp. 45-51 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Zlatko Rakocevic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Phase Formation ◽  
Rutherford Backscattering Spectrometry ◽  
Deposition Process ◽  
Columnar Structure ◽  
Nitrogen Partial Pressure ◽  
Tem Analysis ◽  
Dense Microstructure ◽  
Transmission Electron ◽  
Partial Pressures

The properties of various CrxNy films grown by direct current (DC) reactive sputtering process with different values of nitrogen partial pressures (0, 2?10-4, 3.5?10-4 and 5?10-4 mbar) were studied. The structural analysis of the samples was performed by using X-ray diffraction and transmission electron microscopy (TEM), while an elemental analysis was realized by means of Rutherford backscattering spectrometry. By varying nitrogen partial pressure the pure Cr layer, mixture of Cr, Cr2N and CrN phases, or single-phase CrN was produced. TEM analysis showed that at pN2 = 2?10-4 mbar the layer has dense microstructure. On the other hand, the layer deposited at the highest nitrogen partial pressure exhibits pronounced columnar structure. The optical properties of CrxNy films were evaluated from spectroscopic ellipsometry data by the Drude or combined Drude and Tauc-Lorentz model. It was found that both refractive index and extinction coefficient are strongly dependent on the dominant phase formation (Cr, Cr2N, CrN) during the deposition process. Finally, the electrical studies indicated the metallic character of Cr2N phase and semiconducting behaviour of CrN.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

TEM Sample Preparation Tricks for Advanced DRAMs

2015 ◽  
Author(s):  
Ching Shan Sung ◽  
Hsiu Ting Lee ◽  
Jian Shing Luo
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Sample Preparation ◽  
Integrated Circuit ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Tem Analysis ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Characterization Of Materials

Abstract Transmission electron microscopy (TEM) plays an important role in the structural analysis and characterization of materials for process evaluation and failure analysis in the integrated circuit (IC) industry as device shrinkage continues. It is well known that a high quality TEM sample is one of the keys which enables to facilitate successful TEM analysis. This paper demonstrates a few examples to show the tricks on positioning, protection deposition, sample dicing, and focused ion beam milling of the TEM sample preparation for advanced DRAMs. The micro-structures of the devices and samples architectures were observed by using cross sectional transmission electron microscopy, scanning electron microscopy, and optical microscopy. Following these tricks can help readers to prepare TEM samples with higher quality and efficiency.

Ion Beam Reactive Sputter-Deposition of Silicon and Zirconium Oxides.

1995 ◽  
Vol 396 ◽  
Author(s):  
S.D. Pringle ◽  
R. Valizadeh ◽  
J.S. Colligon ◽  
C.A. Faunce ◽  
H. Kheyrandish
Keyword(s):  
Partial Pressure ◽  
Ion Beam ◽  
Partial Pressure Of Oxygen ◽  
Cross Sectional ◽  
Silica Films ◽  
Zirconium Oxides ◽  
Reactive Sputter Deposition ◽  
Silicon Carbon ◽  
Argon Ion ◽  
Zirconia Films

AbstractOxides of silicon and zirconium have been deposited onto silicon, carbon and aluminium substrates by reactive sputtering using a 1 keV argon ion beam and a controlled partial pressure of oxygen. Using RBS, film composition was determined for a given partial pressure of oxygen and different Si or Zr deposition rates. There is evidence of retained argon in the film which is primarily due to argon ions reflected from the sputtered target. Cross-sectional TEM was used to examine the film microstructure and morphology. Both silica films and sub-stoichiometric zirconia films were found to be amorphous,whereas stoichiometric zirconia films were found to be polycrystalline with grain sizes in the range 10-20nm. A model has been developed to predict the composition of deposited films.

Cross-sectional Specimen Preparation and Observation of a Plasma Sprayed Coating Using a Focused Ion Beam/Transmission Electron Microscopy System

2000 ◽  
Vol 6 (3) ◽  
pp. 218-223
Author(s):  
Toshie Yaguchi ◽  
Takeo Kamino ◽  
Mitsumasa Sasaki ◽  
Gerard Barbezat ◽  
Ryoichi Urao
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Specimen Preparation ◽  
Coating Film ◽  
Cross Sectional ◽  
X Ray ◽  
Bright Contrast ◽  
Transmission Electron ◽  
Sprayed Coating ◽  
Plasma Sprayed

Abstract A focused ion beam (FIB) technique was applied to cross-sectional specimen preparation to observe an interface between a plasma sprayed coating and an aluminum (Al) substrate by transmission electron microscopy (TEM). The surface of the sprayed coating film has a roughness of several tens of microns. Sputter rates for the coating film and the substrate are greatly different. The rough surface and the difference in sputter rate cause problems in making TEM specimens with smooth side walls. The top surface of the coating film was planerized by the FIB before fabricating the TEM specimen. The interfaces were investigated by TEM and energy-dispersive X-ray (EDX) analysis. The TEM observation revealed that there is a 10 nm thick amorphous layer at the interface between the coating film and substrate. The coating film consists of two kinds of sublayers with bright and dark contrast. The bright contrast sublayers were amorphous layers with thickness of 2~10 nm. The Al/Fe X-ray intensity ratio was larger in bright contrast sublayers than that in dark contrast sublayers.

Characterization of Structure and Mechanical Properties of MoSi2-SiC Nanolayer Composites

1993 ◽  
Vol 322 ◽  
Author(s):  
H. Kung ◽  
T. R. Jervis ◽  
J-P. Hirvonen ◽  
M. Nastasi ◽  
T. E. Mitchell
Keyword(s):  
Mechanical Properties ◽  
Structural Changes ◽  
Crystallization Process ◽  
Mechanical Response ◽  
Cross Sectional ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Layer Structures ◽  
Amorphous Structures

AbstractA systematic study of the structure-mechanical properties relationship is reported for MoSi2-SiC nanolayer composites. Alternating layers of MoSi2 and SiC were synthesized by DCmagnetron and if-diode sputtering, respectively. Cross-sectional transmission electron microscopy was used to examine three distinct reactions in the specimens when exposed to different annealing conditions: crystallization and phase transformation of MoSi2, crystallization of SiC, and spheroidization of the layer structures. Nanoindentation was employed to characterize the mechanical response as a function of the structural changes. As-sputtered material exhibits amorphous structures in both types of layers and has a hardness of 11GPa and a modulus of 217GPa. Subsequent heat treatment induces crystallization of MoSi2 to form the C40 structure at 500°C and SiC to form the a structure at 700°C. The crystallization process is directly responsible for the hardness and modulus increase in the multilayers. A hardness of 24GPa and a modulus of 340GPa can be achieved through crystallizing both MoSi2 and SiC layers. Annealing at 900°C for 2h causes the transformation of MoSi2 into the Cllb structure, as well as spheroidization of the layering to form a nanocrystalline equiaxed microstructure. A slight degradation in hardness but not in modulus is observed accompanying the layer break-down.

A Polishless Method For Preparation Of Cross-Sectional Tem Samples

1987 ◽  
Vol 115 ◽  
Author(s):  
J. T. Wetzel ◽  
D. A. Danner
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ion Beam ◽  
Ease Of Use ◽  
Traditional Methods ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Lift Off ◽  
Materials Used ◽  
Transparent Area

ABSTRACTCross-sectional samples for Transmission Electron Microscopy (TEM) have been made without the use of mechanical polishing and ion beam milling. Instead of traditional methods, we have used a combination of electron beam (e-beam) lithography for metal lift-off and reactive ion etching (RIE) to produce TEM samples of selected areas. The sample integrity for handling, dropping and ease of use is excellent, and the large amount of transparent area available for study is nearly 2 orders of magnitude larger than that given by traditional methods. The thickness of the samples is somewhat extreme, on the order of 0.50–1.0μm, but efforts are being made to reduce this dimension in order to make the method applicable to the whole range of materials used in silicon technology.

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