Ion Beam Reactive Sputter-Deposition of Silicon and Zirconium Oxides.

1995 ◽  
Vol 396 ◽  
Author(s):  
S.D. Pringle ◽  
R. Valizadeh ◽  
J.S. Colligon ◽  
C.A. Faunce ◽  
H. Kheyrandish
Keyword(s):  
Partial Pressure ◽  
Ion Beam ◽  
Partial Pressure Of Oxygen ◽  
Cross Sectional ◽  
Silica Films ◽  
Zirconium Oxides ◽  
Reactive Sputter Deposition ◽  
Silicon Carbon ◽  
Argon Ion ◽  
Zirconia Films

AbstractOxides of silicon and zirconium have been deposited onto silicon, carbon and aluminium substrates by reactive sputtering using a 1 keV argon ion beam and a controlled partial pressure of oxygen. Using RBS, film composition was determined for a given partial pressure of oxygen and different Si or Zr deposition rates. There is evidence of retained argon in the film which is primarily due to argon ions reflected from the sputtered target. Cross-sectional TEM was used to examine the film microstructure and morphology. Both silica films and sub-stoichiometric zirconia films were found to be amorphous,whereas stoichiometric zirconia films were found to be polycrystalline with grain sizes in the range 10-20nm. A model has been developed to predict the composition of deposited films.

scholarly journals Ion-beam irradiation effects on reactively sputtered CrN layers

2011 ◽  
Vol 5 (1) ◽  
pp. 25-29 ◽  
Author(s):  
Mirjana Novakovic ◽  
Maja Popovic ◽  
Natasa Bibic
Keyword(s):  
Partial Pressure ◽  
Structural Changes ◽  
Ion Beam ◽  
Xrd Analysis ◽  
Nitrogen Partial Pressure ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Partial Pressures ◽  
Mean Grain Size ◽  
Argon Ions

This paper presents a study of micro-structural changes induced in CrN layers by irradiation with 120 keV argon ions. The layers were deposited on (100) Si wafers, at different nitrogen partial pressures (2?10-4, 3.5?10-4 and 5?10-4 mbar), to a total thickness of 260-280 nm. During deposition the substrates were held at 150?C. After deposition the samples were irradiated with argon ions to the fluencies of 1?1015 and 1?1016 ions/cm2, under the vacuum of 7?10-6 mbar. Characterization of the samples structure and morphology were performed by X-ray diffraction (XRD) analysis and cross-sectional transmission electron microscopy (XTEM), and the concentration profiles were determined by Rutheford backscattering (RBS) spectrometry. It was found that the layer composition strongly depends on the nitrogen partial pressure during deposition. A pure stoichiometric CrN phase was achieved for the highest nitrogen partial pressure (5?10-4 mbar). Argon ions irradiation induces micro-structural changes in the CrN layers such as variation of the lattice constants, micro-strain and mean grain size.

scholarly journals New Method of Preparing Cross Sectional Samples and Ultra-Thin Foils for SEM and TEM by a Broad Argon Ion Beam

2006 ◽  
Vol 12 (S02) ◽  
pp. 1246-1247
Author(s):  
K Ogura ◽  
N Erdman ◽  
AR Campbell ◽  
S Asahina
Keyword(s):  
Ion Beam ◽  
New Method ◽  
Cross Sectional ◽  
Sem And Tem ◽  
Thin Foils ◽  
Argon Ion

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

Reactive Ion Beam Etching (RIBE) Technique and Instrumentation for SEM Specimen Preparation of Semiconductors

1999 ◽  
Vol 5 (S2) ◽  
pp. 912-913
Author(s):  
R. Alani ◽  
R.J. Mitro ◽  
K. Ogura
Keyword(s):  
Ion Beam ◽  
Original System ◽  
Surface Cleaning ◽  
Specimen Preparation ◽  
Cross Sectional ◽  
Ion Beam Etching ◽  
Semiconductor Structures ◽  
Wet Chemical ◽  
Wafer Processing ◽  
Argon Ion

Argon ion beam etching has established itself as an alternative technique to “wet chemical” etching for the preparation of cross sectional SEM specimens of semiconductors [1]. Complementing this technique, we are reporting the results of an iodine RIBE method for improved etching/cleaning capabilities with a measurable increase in etching rates as compared to argon ion beam etching. RIBE systems have been used for decades in the semiconductor research/industry for wafer processing, patterning and surface cleaning. This same technique has also been used for high quality TEM specimen preparation of certain semiconductor materials [2,3]. The beneficial aspects of the iodide RIBE technique for surface etching for a variety of semiconductor structures along with the related instrumentation will be discussed. The semiconductor specimens include traditional ICs and more advanced copper technology devices.The design and construction of the original system used in this work has already been reported [4].

Reduction of the Damage Induced in an Fib-Fabricated X-Tem Specimen

1998 ◽  
Vol 523 ◽  
Author(s):  
N. I. Kato ◽  
K. Tsujimoto ◽  
N. Miura
Keyword(s):  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Side Wall ◽  
Beam Current ◽  
Wet Etching ◽  
Ion Milling ◽  
Cross Sectional ◽  
20 Nm ◽  
Argon Ion

AbstractIn focused ion beam (FIB) fabrication of cross-sectional transmission electron microscopy (X-TEM) specimens, highly accelerated ion beams sometimes cause serious damage. The damage can be induced in both the specimen surface and in the side walls. We used X-TEM observations to investigate the side-wall damage induced by FIB fabrication in crystalline silicon. The damaged layer was found to be about 20 nm thick in the case of 30-keV FIB etching. We tried to reduce the damage by several methods, such as gas-assisted etching (GAE) with iodine, broad argon ion milling and wet etching. The damaged layer was 19 nm for GAE and 12 nm for argon ion milling with a beam current of 70 mA and the tilt angle between the beam and the specimen of 15 degrees. Wet etching using a mixture of nitric and hydrofluoric acid removes most of the damaged layer.

Microstructure of Zirconia Films Prepared by Argon Ion Beam Enhanced Deposition

1992 ◽  
Vol 132 (2) ◽  
pp. 405-411 ◽  
Author(s):  
N. K. Huang ◽  
H. Kheyrandish ◽  
J. S. Colligon
Keyword(s):  
Ion Beam ◽  
Argon Ion ◽  
Zirconia Films

Transmission Electron Microscopy Studies of Aluminum Oxidation

1985 ◽  
Vol 43 ◽  
pp. 268-269
Author(s):  
J.Y. Lee
Keyword(s):  
Nucleation And Growth ◽  
Ion Milling ◽  
Cross Sectional ◽  
Polycrystalline Aluminum ◽  
Axis Orientation ◽  
Temperature Oxidation ◽  
Aluminum Oxidation ◽  
Transmission Electron ◽  
High Resolution Images ◽  
Argon Ion

In the oxidation of metals and alloys, microstructural features at the atomic level play an important role in the nucleation and growth of the oxide, but little is known about the atomic mechanisms of high temperature oxidation. The present paper describes current progress on crystallographic aspects of aluminum oxidation. The 99.999% pure, polycrystalline aluminum was chemically polished and oxidized in 1 atm air at either 550°C or 600°C for times from 0.5 hr to 4 weeks. Cross-sectional specimens were prepared by forming a sandwich with epoxy, followed by mechanical polishing and then argon ion milling. High resolution images were recorded in a <110>oxide zone-axis orientation with a JE0L JEM 200CX microscope operated at 200 keV.

Ultrastructural Features of Normal and Diseased Hair Revealed by Ion Beam Etching and Freeze Fracture

1975 ◽  
Vol 33 ◽  
pp. 358-359
Author(s):  
M. Spector ◽  
A. C. Brown
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Ectodermal Dysplasia ◽  
Ion Beam ◽  
Freeze Fracture ◽  
Ion Current ◽  
Ion Beam Etching ◽  
Pili Torti ◽  
Argon Ion ◽  
Scanning Electron

Ion beam etching and freeze fracture techniques were utilized in conjunction with scanning electron microscopy to study the ultrastructure of normal and diseased human hair. Topographical differences in the cuticular scale of normal and diseased hair were demonstrated in previous scanning electron microscope studies. In the present study, ion beam etching and freeze fracture techniques were utilized to reveal subsurface ultrastructural features of the cuticle and cortex.Samples of normal and diseased hair including monilethrix, pili torti, pili annulati, and hidrotic ectodermal dysplasia were cut from areas near the base of the hair. In preparation for ion beam etching, untreated hairs were mounted on conducting tape on a conducting silicon substrate. The hairs were ion beam etched by an 18 ky argon ion beam (5μA ion current) from an ETEC ion beam etching device. The ion beam was oriented perpendicular to the substrate. The specimen remained stationary in the beam for exposures of 6 to 8 minutes.

High-resolution transmission electron microscopic study of highly oxygen doped silicon layer

1989 ◽  
Vol 47 ◽  
pp. 692-693
Author(s):  
H. Takaoka ◽  
M. Tomita ◽  
T. Hayashi
Keyword(s):  
High Resolution ◽  
Oxygen Concentration ◽  
Silicon Layer ◽  
Detailed Structure ◽  
Electron Microscopic ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Doped Silicon ◽  
Argon Ion

High resolution transmission electron microscopy (HRTEM) is the effective technique for characterization of detailed structure of semiconductor materials. Oxygen is one of the important impurities in semiconductors. Detailed structure of highly oxygen doped silicon has not clearly investigated yet. This report describes detailed structure of highly oxygen doped silicon observed by HRTEM. Both samples prepared by Molecular beam epitaxy (MBE) and ion implantation were observed to investigate effects of oxygen concentration and doping methods to the crystal structure.The observed oxygen doped samples were prepared by MBE method in oxygen environment on (111) substrates. Oxygen concentration was about 1021 atoms/cm3. Another sample was silicon of (100) orientation implanted with oxygen ions at an energy of 180 keV. Oxygen concentration of this sample was about 1020 atoms/cm3 Cross-sectional specimens of (011) orientation were prepared by argon ion thinning and were observed by TEM at an accelerating voltage of 400 kV.

The microstructure of a TiB2/Ti-47 Al composite material

1989 ◽  
Vol 47 ◽  
pp. 674-675
Author(s):  
O. Popoola ◽  
A.H. Heuer ◽  
P. Pirouz
Keyword(s):  
Composite Material ◽  
Ion Beam ◽  
Chemical Properties ◽  
Intermetallic Alloys ◽  
Transmission Electron ◽  
Diamond Polishing ◽  
Al Composite ◽  
The Matrix ◽  
Argon Ion ◽  
And Chemical Properties

The addition of fibres or particles (TiB2, SiC etc.) into TiAl intermetallic alloys could increase their toughness without compromising their good high temperature mechanical and chemical properties. This paper briefly discribes the microstructure developed by a TiAl/TiB2 composite material fabricated with the XD™ process and forged at 960°C.The specimens for transmission electron microscopy (TEM) were prepared in the usual way (i.e. diamond polishing and argon ion beam thinning) and examined on a JEOL 4000EX for microstucture and on a Philips 400T equipped with a SiLi detector for microanalyses.The matrix was predominantly γ (TiAl with L10 structure) and α2(TisAl with DO 19 structure) phases with various morphologies shown in figure 1.

The stabilization of B.C.C. Cu in Cu/Nb nanolayered composites

1996 ◽  
Vol 54 ◽  
pp. 228-229
Author(s):  
H. Kung ◽  
A.J. Griffin ◽  
Y.C. Lu ◽  
K.E. Sickafus ◽  
T.E. Mitchell ◽  
...  
Keyword(s):  
Electrical Resistivity ◽  
Layer Thickness ◽  
Volume Fraction ◽  
Ion Beam ◽  
High Strength ◽  
Cross Sectional ◽  
Metastable Structure ◽  
High Resolution Tem ◽  
Potential Improvement ◽  
Two Phases

Materials with compositionally modulated structures have gained much attention recently due to potential improvement in electrical, magnetic and mechanical properties. Specifically, Cu-Nb laminate systems have been extensively studied mainly due to the combination of high strength, and superior thermal and electrical conductivity that can be obtained and optimized for the different applications. The effect of layer thickness on the hardness, residual stress and electrical resistivity has been investigated. In general, increases in hardness and electrical resistivity have been observed with decreasing layer thickness. In addition, reduction in structural scale has caused the formation of a metastable structure which exhibits uniquely different properties. In this study, we report the formation of b.c.c. Cu in highly textured Cu/Nb nanolayers. A series of Cu/Nb nanolayered films, with alternating Cu and Nb layers, were prepared by dc magnetron sputtering onto Si {100} wafers. The nominal total thickness of each layered film was 1 μm. The layer thickness was varied between 1 nm and 500 nm with the volume fraction of the two phases kept constant at 50%. The deposition rates and film densities were determined through a combination of profilometry and ion beam analysis techniques. Cross-sectional transmission electron microscopy (XTEM) was used to examine the structure, phase and grain size distribution of the as-sputtered films. A JEOL 3000F high resolution TEM was used to characterize the microstructure.

Sign in / Sign up

Export Citation Format

Share Document