Glass Formation and Thermal Stability of Bulk Glassy Cu&ndash;Zr&ndash;Ti&ndash;Sn&ndash;Si Alloys

In this study, the influence of 0.5 wt.% graphene (Gr) addition on the glass formation and thermal stability of the Al75Ni10Ti10Zr5 alloy during mechanical alloying (MA) process has been investigated. The as-milled products consist of the amorphous phase and a small amount of the AlNi nanocrystals. The results showed that the 0.5 wt.% Gr addition could shorten the amorphization process, indicating the enhancement of the glass forming ability. Moreover, the onset crystallization temperature (Tx1) slightly decreased with prolonging milling time for the as-milled alloys. However, it is worth noting that the Gr addition effectively increased the Tx1 of the as-milled Al-based amorphous composites for the long duration of MA time. The Tx1 values of the as-milled AlNiTiZrGr amorphous composites were more than 1120 K, exhibiting the highly thermal stability.

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Effect of microalloying on glass formation and thermal stability of Cu–Pr-based amorphous alloys

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2006.08.083 ◽

2007 ◽

Vol 439 (1-2) ◽

pp. 87-90 ◽

Cited By ~ 8

Author(s):

Xuelian Li ◽

Xiufang Bian ◽

Lina Hu ◽

Yuqin Wu ◽

Junyan Zhang

Keyword(s):

Thermal Stability ◽

Glass Formation ◽

Amorphous Alloys ◽

Thermal Stability Of

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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