scholarly journals STRUCTURE AND OPTICAL PROPERTIES OF CdSe THIN FILMS AS A FUNCTION OF THE ANNEALING TIME

2017 ◽  
Vol 27 (5) ◽  
pp. 102
Author(s):  
Eman M. Noori
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Structural Investigation ◽  
Wave Length ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
X Ray ◽  
Air Atmosphere ◽  
Deposited Films

Cadmium (Cd) and selenide powder used to prepared cadmium selenide alloy. (CdSe) thin films of thickness 1320 Å were thermally evaporated technique deposited on glass substrate at room temperature. The as-deposited films were annealed in air atmosphere at 100oC, for three different annealing times (60, 120 and 180 minutes). The structural investigation performed by x-ray diffraction (XRD) technique; showed that the films have a polycrystalline and hexagonal (wurtzite) structure. For all deposited films the preferential orientation is (002).The value of lattice constant (a), grain size, strain and dislocation density of the deposited films are calculated and their variations with annealing times are studied. The absorbance spectra of cadmium selenide thin films were recorded in the wave length range of 400 nm to 900 nm. The values of the optical band gap energy, Eg (allowed direct transitions), calculated from the absorption spectra, ranged between (2.54 and 2.41) eV.

Al1-x ScxN Thin Film Structures for Pyroelectric Sensing Applications

MRS Advances ◽  
2016 ◽  
Vol 1 (39) ◽  
pp. 2711-2716 ◽  
Author(s):  
V. Vasilyev ◽  
J. Cetnar ◽  
B. Claflin ◽  
G. Grzybowski ◽  
K. Leedy ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Pyroelectric Coefficient ◽  
X Ray Diffraction ◽  
Ir Detectors ◽  
Pyroelectric Properties ◽  
X Ray ◽  
Sensing Applications ◽  
Pyroelectric Material ◽  
Deposited Films

ABSTRACTAlN thin film structures have many useful and practical piezoelectric and pyroelectric properties. The potential enhancement of the AlN piezo- and pyroelectric constants allows it to compete with more commonly used materials. For example, combination of AlN with ScN leads to new structural, electronic, and mechanical characteristics, which have been reported to substantially enhance the piezoelectric coefficients in solid-solution AlN-ScN compounds, compared to a pure AlN-phase material.In our work, we demonstrate that an analogous alloying approach results in considerable enhancement of the pyroelectric properties of AlN - ScN composites. Thin films of ScN, AlN and Al1-x ScxN (x = 0 – 1.0) were deposited on silicon (004) substrates using dual reactive sputtering in Ar/N2 atmosphere from Sc and Al targets. The deposited films were studied and compared using x-ray diffraction, XPS, SEM, and pyroelectric characterization. An up to 25% enhancement was observed in the pyroelectric coefficient (Pc = 0.9 µC /m2K) for Sc1-xAlxN thin films structures in comparison to pure AlN thin films (Pc = 0.71 µC/m2K). The obtained results suggest that Al1-x ScxN films could be a promising novel pyroelectric material and might be suitable for use in uncooled IR detectors.

Electron and X-ray diffraction studies of chemically deposited thin films of cadmium selenide following reaction with mercury(II) chloride solution

1995 ◽  
Vol 6 (4) ◽  
pp. 349-354 ◽  
Author(s):  
C. A. Estrada ◽  
E. A. Meyers ◽  
R. A. Zingaro ◽  
D. C. Dufner ◽  
P. K. Nair ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Chloride Solution ◽  
X Ray Diffraction ◽  
X Ray

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

Electrochemical Deposition and Characterization of Cd-Fe-Se Thin Films

2009 ◽  
Vol 68 ◽  
pp. 69-76 ◽  
Author(s):  
S. Thanikaikarasan ◽  
T. Mahalingam ◽  
K. Sundaram ◽  
Tae Kyu Kim ◽  
Yong Deak Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Hexagonal Structure ◽  
X Rays ◽  
X Ray Diffraction ◽  
X Ray ◽  
Iron Selenide ◽  
Glass Substrates ◽  
Diffraction Patterns ◽  
Cadmium Iron Selenide ◽  
Deposited Films

Cadmium iron selenide (Cd-Fe-Se) thin films were deposited onto tin oxide (SnO2) coated conducting glass substrates from an aqueous electrolytic bath containing CdSO4, FeSO4 and SeO2 by potentiostatic electrodeposition. The deposition potentials of Cadmium (Cd), Iron (Fe), Selenium (Se) and Cadmium-Iron-Selenide (Cd-Fe-Se) were determined from linear cathodic polarization curves. The deposited films were characterized by x-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive analysis by x-rays (EDX) and optical absorption techniques, respectively. X-ray diffraction patterns shows that the deposited films are found to be hexagonal structure with preferential orientation along (100) plane. The effect of FeSO4 concentration on structural, morphological, compositional and optical properties of the films are studied and discussed in detail.

INVESTIGATING ANNEALING EFFECT ON OPTICAL PROPERTIES OF Cd0.8Zn0.2S THIN FILMS

2014 ◽  
Vol 21 (05) ◽  
pp. 1450073 ◽  
Author(s):  
SOMAYEH AZIZI ◽  
HAMID REZAGHOLIPOUR DIZAJI ◽  
MOHAMMAD HOSSEIN EHSANI ◽  
SEYED FEYZOLAH GHAVAMI MIRMAHALLE
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Hexagonal Wurtzite Structure ◽  
Band Gap Energy ◽  
Annealing Effect ◽  
Thin Layers ◽  
Optical Parameters ◽  
Thermal Evaporation Method ◽  
X Ray ◽  
Glass Substrates

Cd 0.8 Zn 0.2 S thin films deposited on glass substrates by thermal evaporation method were annealed at different temperatures for the first time in order to investigate annealing effect on optical properties. The compositional, structural of nanoparticles precursor synthesized using microwave irradiation method and optical properties of the films were studied using energy dispersive X-ray (EDX), X-ray diffraction, transmission electron microscopy (TEM), and UV-visible spectrophotometer techniques. The annealed films were found to have hexagonal Wurtzite structure with strong preferential orientation along the (002) diffraction peak. Important optical parameters such as extinction coefficient and refractive index revealed the effect of heat treatment on the deposited thin layers. A reduction in the band gap energy from 2.41 eV to 2.29 eV was observed for the annealed samples.

Growth of Copper Telluride Thin Films using Electrodeposition

2018 ◽  
Vol 21 (1) ◽  
pp. 015-019
Author(s):  
P. Jeyakumar ◽  
S. Thanikaikarasan ◽  
B. Natarajan ◽  
T. Mahalingam ◽  
Luis Ixtlilco
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Electrodeposition Technique ◽  
Cyclic Voltammetric ◽  
Voltammetric Analysis ◽  
Copper Telluride ◽  
X Ray ◽  
Microstructural Parameters ◽  
Glass Substrates ◽  
Deposited Films

Copper Telluride thin films have been prepared on Fluorine doped Tin Oxide coated conducting glass substrates using electrodeposition technique. Cyclic voltammetric analysis has been carried out to analyze the growth mechanism of the deposited films. Thickness value of the deposited films has been estimated using Stylus profilometry. X-ray diffraction pattern revealed that the prepared films possess polycrystalline in nature. Microstructural parameters such as crystallite size, strain and dislocation density are evaluated using observed X-ray diffraction data. Optical absorption analysis showed that the prepared films are found to exhibit band gap value around 2.03 eV.

Structural Properties of Ag-Based Chalcopyrite Compound Thin Films for Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Hiroki Ishizaki ◽  
Keiichiro Yamada ◽  
Ryouta Arai ◽  
Yasuyuki Kuromiya ◽  
Yukari Masatsugu ◽  
...  
Keyword(s):  
Thin Films ◽  
Rietveld Analysis ◽  
Atomic Ratio ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray ◽  
Glass Substrates ◽  
Crystallographic Property ◽  
Chalcopyrite Compound

AbstractAgGa5Se8 and Ag(In1-xGax)Se2 thin films with different Ag/Ga atomic ratios have been deposited on the corning 1737 glass substrates by molecular beam epitaxy (MBE) system. This crystallographic property of AgGa5Se8 thin films has been investigated by x-ray diffraction and rietveld analysis. These films had the tetragonal structure with the space group of P-42m, regardless of Ag/Ga atomic ratio. The lattice parameters and the optical band gap energy decreased with an increase in the Ag/Ga atomic ratio. Thus, the structural and optical properties of these AgGa5Se8 thin films were controlled by the Ag/Ga atomic ratio.

Effect of Deposition Time on Structure of TiAlN Thin Films Deposited by Reactive DC Magnetron Co-Sputtering

2017 ◽  
Vol 866 ◽  
pp. 318-321 ◽  
Author(s):  
Nirun Witit-Anun ◽  
Adisorn Buranawong
Keyword(s):  
Thin Films ◽  
Elemental Composition ◽  
Deposition Time ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride ◽  
Deposited Films ◽  
Section Analysis

Titanium aluminum nitride (TiAlN) thin films were deposited by reactive DC magnetron co-sputtering technique on Si substrate. The effect of deposition time on the structure of the TiAlN films was investigated. The crystal structure, surface morphology, thickness and elemental composition were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Al)N solid solution. The as-deposited thin films exhibited a nanostructure with a crystallite size of less than 30 nm. The film thickness increase from 115 nm to 329 nm, while the lattice parameter decrease from 4.206 Å to 4.196 Å, with increasing of the deposition time. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the deposition time. The elemental composition of the as-deposited films varied with the deposition time.

Effect of bath temperature on the chemical bath deposition of PbSe thin films

1970 ◽  
Vol 6 (2) ◽  
pp. 126-132 ◽  
Author(s):  
Anuar Kassim ◽  
Tan Wee Tee ◽  
Ho Soon Min ◽  
Shanthi Monohorn ◽  
Saravanan Nagalingam
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Lead Nitrate ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
Sodium Selenate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Gap Energy

PbSe thin films are prepared by chemical bath deposition technique over microscope glass substrates from an aqueous acidic bath containing lead nitrate and sodium selenate. The influence of bath temperature on the properties of PbSe film is investigated. The X-ray diffraction analysis showed the deposited films were polycrystalline and having the (111) orientation. The surface morphology study revealed that the grains have cubic shape crystal. The band gap energy was decreased from 2.0 to 1.3 eV as the bath temperature was increased from 40 to 80°C. The films deposited at 80°C showed good crystallinity and uniformly distributed over the surface of substrate with larger grain sizes. Therefore, the optimum bath temperature is 80°C. Keywords: Lead selenide; X-ray diffraction; Band gap energy; Chemical bath deposition; Thin films DOI: 10.3126/kuset.v6i2.4021Kathmandu University Journal of Science, Engineering and Technology Vol.6. No II, November, 2010, pp.126-132

Thermal Evolution of Magnetic Properties and Crystal Structure in Compositionally Modulated Al/Ni Thin Films

1991 ◽  
Vol 232 ◽  
Author(s):  
A. Waknis ◽  
E. Haftek ◽  
M. Tan ◽  
J. A. Barnard ◽  
E. Tsang
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Magnetic Properties ◽  
Thermal Evolution ◽  
Dead Layer ◽  
Multilayer Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
The Individual ◽  
Deposited Films

ABSTRACTPeriodic multilayer thin films of the form (xAl/yNi)n were grown by alternate deposition of pure Al and Ni using dc-magnetron sputtering. The thicknesses of the individual Al and Ni layers are given by x and y, respectively, and the total number of bilayer units is n. For this set of experiments, x was fixed at 3.5 nm while y was systematically varied from 2.4 to 154 nm. The films were tested in as-deposited and annealed states for magnetic properties using a vibrating sample magnetometer and for crystal structure by x-ray diffraction. In both the as-deposited and annealed samples the magnetization per unit volume of Ni declined as the Ni layer thickness decreased. This result can be interpreted in terms of a magnetically ‘dead’ layer at the Al/Ni interfaces. The width of the dead layer increased from 2.9 nm to 5.8 nm on annealing. Magnetic properties were correlated with crystal structure experiments by x-ray diffraction. As-deposited films yielded a Ni(111) texture. The Ni (111) peak decreased in intensity and broadened as the Ni thickness declined. Annealing produced evidence for the growth of the intermetallic NiAl3.

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