scholarly journals Effect of Temperature Variations on Wave Propagation Characteristics in Power Cables

2015 ◽  
Vol 106 (1) ◽  
pp. 28-38 ◽  
Author(s):  
C. Nyamupangedengu ◽  
M. Sotsaka ◽  
G. Mlangeni ◽  
L. Ndlovu ◽  
S. Munilal
Keyword(s):  
Wave Propagation ◽  
Effect Of Temperature ◽  
Power Cables ◽  
Propagation Characteristics ◽  
Temperature Variations

Wave Propagation Characteristics and Model Uncertainties for HVDC Power Cables

2015 ◽  
Vol 30 (6) ◽  
pp. 2527-2534
Author(s):  
Stefan Gustafsson ◽  
Borje Nilsson ◽  
Sven Nordebo ◽  
Mats Sjoberg
Keyword(s):  
Wave Propagation ◽  
Power Cables ◽  
Propagation Characteristics ◽  
Model Uncertainties

Wave Propagation Characteristics on a Pipe-Type Cable in Particular Reference to the Proximity Effect

2013 ◽  
Vol 133 (12) ◽  
pp. 954-960 ◽  
Author(s):  
Akihiro Ametani ◽  
Kazuki Kawamura ◽  
Asha Shendge ◽  
Naoto Nagaoka ◽  
Yoshihiro Baba
Keyword(s):  
Wave Propagation ◽  
Proximity Effect ◽  
Propagation Characteristics

Temperature Sensitivity Analysis of Extended Source Double Gate Tunnel Field Effect Transistor

2021 ◽  
Author(s):  
Dharmender Nishad ◽  
Kaushal Nigam ◽  
Satyendra Kumar
Keyword(s):  
Temperature Sensitivity ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Of Temperature ◽  
Double Gate ◽  
Extended Source ◽  
Temperature Variations ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Abstract Temperature-induced performance variation is one of the main concerns of the conventional stack gate oxide double gate tunnel field-effect transistor (SGO-DG-TFET). In this regard, we investigate the temperature sensitivity of extended source double gate tunnel field-effect transistor (ESDG-TFET). For this, we have analyzed the effect of temperature variations on the transfer characteristics, analog/RF, linearity and distortion figure of merits (FOMs) using technology computer aided design (TCAD) simulations. Further, the temperature sensitivity performance is compared with conventional SGO-DG-TFET. The comparative analysis shows that ESDG-TFET is less sensitive to temperature variations compared to the conventional SGO-DG-TFET. Therefore, this indicates that ESDG-TFET is more reliable for low-power, high-frequency applications at a higher temperature compared to conventional SGO-DG-TFET.

Sign in / Sign up

Export Citation Format

Share Document