A 65 nm 1.0 V 1.84 ns Silicon-on-Thin-Box (SOTB) embedded SRAM with 13.72 nW/Mbit standby power for smart IoT

2017 ◽  
Author(s):  
Makoto Yabuuchi ◽  
Koji Nii ◽  
Shinji Tanaka ◽  
Yoshihiro Shinozaki ◽  
Yoshiki Yamamoto ◽  
...  
Keyword(s):  
Standby Power ◽  
Embedded Sram

A 65 nm 1.0 V 1.84 ns Silicon-on-Thin-Box (SOTB) embedded SRAM with 13.72 nW/Mbit standby power for smart IoT

2017 ◽  
Author(s):  
Makoto Yabuuchi ◽  
Koji Nii ◽  
Shinji Tanaka ◽  
Yoshihiro Shinozaki ◽  
Yoshiki Yamamoto ◽  
...  
Keyword(s):  
Standby Power ◽  
Embedded Sram

LOW POWER CONTINUOUS TIME COMMON MODE SENSING FOR COMMON MODE FEEDBACK CIRCUITS

2010 ◽  
Vol 19 (03) ◽  
pp. 519-528 ◽  
Author(s):  
M. PRAMOD ◽  
T. LAXMINIDHI
Keyword(s):  
Continuous Time ◽  
Input Impedance ◽  
Cmos Process ◽  
High Input ◽  
High Input Impedance ◽  
Common Mode ◽  
Standby Power ◽  
Low Distortion ◽  
Simulation Results ◽  
Feedback Circuits

Continuous common mode feedback (CMFB) circuits having high input impedance and low distortion are proposed. The proposed circuits are characterized for 0.18 μm CMOS process with 1.8 V supply. Simulation results indicate that the proposed common mode detector consumes no standby power and CMFB circuit consumes 27–34% less power than previous high swing CMFB circuits.

A 0.6-V, 6.8-μW Embedded SRAM for Ultra-low Power SoC

2006 ◽  
Author(s):  
Kyomin Sohn ◽  
Sungdae Choi ◽  
Jeong-Ho Woo ◽  
Jooyoung Kim ◽  
Hoi-Jun Yoo
Keyword(s):  
Low Power ◽  
Ultra Low Power ◽  
Embedded Sram
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