scholarly journals Influence of the electroneutrality of a metal layer on the plasmon spectrum in dielectric-metal-dielectric structures

2019 ◽  
Vol 6 (2) ◽  
pp. 297-303 ◽  
Author(s):  
P. P. Kostrobij ◽  
◽  
B. M. Markovych ◽  
V. Ye. Polovyi ◽  
◽  
...  
Author(s):  
Vitalii Polovyi ◽  
Kostrobiy Petro

This paper proposes a model that takes into account the discretization of the Fermi wave vector and energy levels, as well as the condition of electroneutrality when investigating the influence of metal thickness on the spectrum of SPPs waves in heterogeneous dielectric-metal-dielectric structures.


Author(s):  
Kurt Christenson

Additive, printed, 3D electrical traces are needed to achieve the desired advances in packaging. Recent advances in silver inks in some cases provide resistivities of 2× bulk silver (3.2E-6 Ohm-cm) when sintered at 120 C, and laser sintering can provide similar performance on substantially room-temperature substrates. Compared to wire bonds, printed traces have smaller heights (no loops) and the trace cross sections can be tailored to carry larger currents. In RF applications, printed traces can be shorter, have lower inductance and crosstalk, and be shaped to form substantially impedance-matched connections. Additive dielectric microstructures are often required to support the additive printing of conductors on 2.5D and 3D electronic structures. For example:A fillet, or at minimum a wall coating, is needed on the conductive sidewall of an unpackaged IC die that is to be connected to an underlying PCB by a printed trace. Large fillets (ca 350 um) are needed on typical single die, <50 um fillets on stacks of thinned die, and <20 um fillets are needed on flexible die.Filling the inter-die gap is necessary when interconnecting closely spaced die.Filling the gap between the substrate dielectric and die is needed when the die is mounted in a cavity in the substrate. Cavity mounting is sometimes used when the floor of the cavity is a thick metal layer that acts as both a ground plane and a heat sink. Dual-cure (UA and/or heat) resins are desirable for creating microstructures as the resins can be “pinned” in-situ to create structures that would normally be impossible due to the flow of the resin. A secondary heating step is normally used to cure any areas shadowed from the UV. These resins can shrink on curing by as much as a few percent causing delamination from underlying structures or stress in the final parts. Much like applying multiple thin coats of paint to avoid the cracking that results from applying one thick coat, applying multiple thin coats of dielectric with simultaneous UV or UV exposure between the coats allows the polymer to be deposited with low stress and without delamination. For example, a method for creating fillets around thick die by multiple layering has been described by Hines et al. It is also possible to create structures with low-shrinkage/CTE materials, but these materials are often compromised in other metrics. Creating micro dielectric structures by conventional syringe dispense methods is difficult due to the size of currently used dispense needles. Even the 190 um OD of a 34 ga needle, which is too small to be used with filled resins, is poorly suited to forming 45-degree fillets on a stack of 35 um-tall die. This work discusses some of the practical aspects and results of creating these micro dielectric microstructures and printed traces using Aerosol Jet® technology.


2020 ◽  
Vol 40 (10) ◽  
pp. 843-847
Author(s):  
N. P. Aleshin ◽  
N. V. Kobernik ◽  
A. S. Pankratov ◽  
V. V. Petrova

Author(s):  
Jenny Fan ◽  
Dave Mark

Abstract Metal interconnect defects have become a more serious yield detractor as backend process complexity has increased from a single layer to about 10 layers. This paper introduces a test methodology to monitor and localize the metal defects based on FPGA products. The test patterns are generated for each metal layer. The results not only indicate the severity of defects for each metal layer, but also accurately isolate open/short defects.


Author(s):  
Alan Kennen ◽  
John F. Guravage ◽  
Lauren Foster ◽  
John Kornblum

Abstract Rapidly changing technology highlights the necessity of developing new failure analysis methodologies. This paper will discuss the combination of two techniques, Design for Test (DFT) and Focused Ion Beam (FIB) analysis, as a means for successfully isolating and identifying a series of high impedance failure sites in a 0.35 μm CMOS design. Although DFT was designed for production testing, the failure mechanism discussed in this paper may not have been isolated without this technique. The device of interest is a mixed signal integrated circuit that provides a digital up-convert function and quadrature modulation. The majority of the circuit functions are digital and as such the majority of the die area is digital. For this analysis, Built In Self Test (BIST) circuitry, an evaluation board for bench testing and FIB techniques were used to successfully identify an unusual failure mechanism. Samples were subjected to Highly Accelerated Stress Test (HAST) as part of the device qualification effort. Post-HAST electrical testing at 200MHz indicated that two units were non-functional. Several different functional blocks on the chip failed electrical testing. One part of the circuitry that failed was the serial interface. The failure analysis team decided to look at the serial interface failure mode first because of the simplicity of the test. After thorough analysis the FA team discovered increasing the data setup time at the serial port input allowed the device to work properly. SEM and FIB techniques were performed which identified a high impedance connection between a metal layer and the underlying via layer. The circuit was modified using a FIB edit, after which all vectors were read back correctly, without the additional set-up time.


Author(s):  
Alexander Sorkin ◽  
Chris Pawlowicz ◽  
Alex Krechmer ◽  
Michael W. Phaneuf

Abstract Competitive circuit analysis of Integrated Circuits (ICs) is one of the most challenging types of analysis. It involves multiple complex IC die de-processing/de-layering steps while keeping precise planarity from metal layer to metal layer. Each step is followed by Scanning Electron Microscope (SEM) imaging together with mosaicking that subsequently passes through an image recognition and Graphic Database System (GDS) conversion process. This conventional procedure is quite time and resource consuming. The current paper discusses and demonstrates a new inventive methodology of circuit tracing on an IC using known FIB Passive Voltage Contrast (PVC) effects [1]. This technique provides significant savings in time and resources.


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