Chemical synthesis and study of structural and optoelectronic properties of CdS thin films: Effect of SILAR growth cycles

2015 ◽  
Vol 9 (3) ◽  
pp. 2461-2469
Author(s):  
S. R. Gosavi ◽  
K. B. Chaudhari
Keyword(s):  
Thin Films ◽  
Average Crystallite Size ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Growth Cycles ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Cds Thin Films ◽  
Structural And Optoelectronic Properties ◽  
Deposited Film

CdS thin films were deposited on glass substrates by using successive ionic layer adsorption and reaction (SILAR) method at room temperature. The effect of SILAR growth cycles on structural, morphological, optical and electrical properties of the films has been studied.  The thickness of the deposited film is measured by employing weight difference method. The X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM) studies showed that all the films exhibit polycrystalline nature and are covered well with glass substrates. The values of average crystallite size were found to be 53 nm, 58 nm, 63 nm and 71 nm corresponding to the thin films deposited with 30, 40, 50 and 60 SILAR growth cycles respectively. From the UV–VIS spectra of the deposited thin films, it was seen that both the absorption properties and energy bandgap of the films changes with increasing number of SILAR growth cycles. A decrease of electrical resistivity has been observed with increasing SILAR growth cycle. 

scholarly journals Characterization of Electrodeposited Cadmium Selenide Thin Films

2012 ◽  
Vol 60 (1) ◽  
pp. 137-140 ◽  
Author(s):  
RI Chowdhury ◽  
MS Islam ◽  
F Sabeth ◽  
G Mustafa ◽  
SFU Farhad ◽  
...  
Keyword(s):  
Thin Films ◽  
Cadmium Selenide ◽  
Low Cost ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cdse Film ◽  
Cell Structures ◽  
Deposited Film ◽  
Deposited Films

Cadmium selenide (CdSe) thin films have been deposited on glass/conducting glass substrates using low-cost electrodeposition method. X-ray diffraction (XRD) technique has been used to identify the phases present in the deposited films and observed that the deposited films are mainly consisting of CdSe phases. The photoelectrochemical (PEC) cell measurements indicate that the CdSe films are n-type in electrical conduction, and optical absorption measurements show that the bandgap for as-deposited film is estimated to be 2.1 eV. Upon heat treatment at 723 K for 30 min in air the band gap of CdSe film is decreased to 1.8 eV. The surface morphology of the deposited films has been characterized using scanning electron microscopy (SEM) and observed that very homogeneous and uniform CdSe film is grown onto FTO/glass substrate. The aim of this work is to use n-type CdSe window materials in CdTe based solar cell structures. The results will be presented in this paper in the light of observed data.DOI: http://dx.doi.org/10.3329/dujs.v60i1.10352  Dhaka Univ. J. Sci. 60(1): 137-140 2012 (January)

scholarly journals Chemically synthesized PbS Nano particulate thin films for a rapid NO2 gas sensor

2016 ◽  
Vol 34 (1) ◽  
pp. 204-211 ◽  
Author(s):  
Vishal V. Burungale ◽  
Rupesh S. Devan ◽  
Sachin A. Pawar ◽  
Namdev S. Harale ◽  
Vithoba L. Patil ◽  
...  
Keyword(s):  
Thin Films ◽  
Gas Sensor ◽  
Gas Sensing ◽  
Operating Temperature ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Gas Sensitivity ◽  
Silar Method ◽  
Layer Adsorption ◽  
Gas Sensing Properties

AbstractRapid NO2 gas sensor has been developed based on PbS nanoparticulate thin films synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method at different precursor concentrations. The structural and morphological properties were investigated by means of X-ray diffraction and field emission scanning electron microscope. NO2 gas sensing properties of PbS thin films deposited at different concentrations were tested. PbS film with 0.25 M precursor concentration showed the highest sensitivity. In order to optimize the operating temperature, the sensitivity of the sensor to 50 ppm NO2 gas was measured at different operating temperatures, from 50 to 200 °C. The gas sensitivity increased with an increase in operating temperature and achieved the maximum value at 150 °C, followed by a decrease in sensitivity with further increase of the operating temperature. The sensitivity was about 35 % for 50 ppm NO2 at 150 °C with rapid response time of 6 s. T90 and T10 recovery time was 97 s at this gas concentration.

Preparation of Cu2ZnSnS4 Thin Films by Successive Ionic Layer Adsorption and Reaction (SILAR) Method for Supercapacitor Applications

2020 ◽  
Vol 20 (10) ◽  
pp. 6235-6244 ◽  
Author(s):  
A. Murugan ◽  
V. Siva ◽  
A. Shameem ◽  
S. Asath Bahadur
Keyword(s):  
Thin Films ◽  
Electrochemical Behavior ◽  
Electrochemical Impedance ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Layer Adsorption ◽  
Diffraction Patterns ◽  
Czts Thin Films ◽  
Supercapacitor Applications ◽  
Ionic Layer

The Cu2ZnSnS4 (CZTS) thin films have been prepared at different deposition cycles, deposited on a glass substrate by successive ionic layer adsorption and reaction (SILAR) method followed by the annealing process at elevated temperature. The investigations on the films have been carried out to understand and confirm its structure, functional group present, crystalline morphology, optical and electrochemical behavior. The powder X-ray diffraction patterns recorded indicate that the deposited films are formed in the tetragonal structure. Other parameters like grain size, dislocation density, and microstrain are also calculated. The uniform surface of the films with spherical shaped morphology has been observed by Scanning Electron Microscopy, and the elemental compositions have been confirmed by EDAX. Electrochemical behavior such as cyclic voltammetry, electrochemical impedance spectroscopy and galvanostatic charge–discharge analysis have been carried out by electrochemical workstation. The modified electrode exhibits maximum specific capacitance value as 416 F/g for a pure sample. Optical studies have shown that the band gaps are estimated between 1.40 eV and 1.57 eV.

Properties of CdS Thin Films Grown by Chemical Bath Deposition as a Function of Bath Temperature

2009 ◽  
Vol 609 ◽  
pp. 243-247 ◽  
Author(s):  
H. Moualkia ◽  
S. Hariech ◽  
M.S. Aida
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Bath Temperature ◽  
Band Gap Energy ◽  
X Ray Diffraction ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Direct Band

The present work deals with the preparation and characterization of cadmium sulfur (CdS) thin films. These films are prepared by chemical bath deposition on the well cleaned glass substrates. The thickness of the samples was measured by using profilometer DEKTAK, structural and optical properties were studied by X-ray diffraction analysis, and UV-visible spectrophotometry. The optical properties of the films have been investigated as a function of temperature. The band gap energy and Urbach energy were also investigated as a function of temperature. From the transmittance data analysis the direct band gap ranges from 2.21 eV to 2.34 eV. A dependence of band gap on temperature has been observed and the possible raisons are discussed. Transmission spectra indicates a high transmission coefficient (75 %). Structural analysis revealed that the films showed cubic structure, and the crystallite size decreased at a higher deposition temperature.

scholarly journals Physical Properties of Nanostructured CdO Films from Alkaline Baths Containing Saccharin as Additive

2013 ◽  
Vol 2013 ◽  
pp. 1-5 ◽  
Author(s):  
Bünyamin Şahin
Keyword(s):  
Raman Spectroscopy ◽  
Optical Properties ◽  
Cadmium Oxide ◽  
X Ray Diffraction ◽  
Silar Method ◽  
Glass Substrates ◽  
Layer Adsorption ◽  
Surface Morphologies ◽  
Alkaline Baths ◽  
Cdo Films

Nanostructured cadmium oxide (CdO) films were fabricated on glass substrates from alkaline baths containing saccharin as an additive by a successive ionic layer adsorption and reaction (SILAR) method. The effects of saccharin concentration in the bath on the structural, morphological, and optical properties were studied by means of scanning electron microscopy (SEM), X-ray diffraction (XRD), photoluminescence, and Raman spectroscopy. The analyses showed that the surface morphologies, XRD peak intensities, Raman spectroscopy, and photoluminescence properties of CdO films changed with saccharin concentration. From the results, it can be said that morphological characteristic and optical properties of the films could be calibrated by adding various saccharin percentages in the growth bath.

scholarly journals Effect some Factors on the Structural Properties of the CdS Thin Films Prepared by Chemical Bath Deposition

2016 ◽  
Vol 64 ◽  
pp. 1-10
Author(s):  
Fatma Salamon
Keyword(s):  
Thin Films ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
X Ray Diffraction ◽  
Hexagonal Crystal ◽  
X Ray ◽  
Glass Substrates ◽  
Cds Thin Films ◽  
Temperature Deposition ◽  
Xrd Patterns

CdS thin films were prepared by chemical bath deposition technique (CBD) onto the glass substrates at different conditions of preparation. The obtained samples are studied by X-Ray diffraction (XRD). The XRD patterns of CdS samples revealed the formation with a hexagonal crystal structure P36mc, and the clear effect of the concentration of thiourea, cadmium sulfide, NaOH, time and temperature deposition, and annealing temperature, on the structure of the prepared thin films. through the study, we found that the samples have preferred orientation along [002], also the thickness of thin films decrease with deposition time after certain value, with the appearance of free cadmium. It has been found that the 200°C is the best temperature for annealing to improve the other structural and physical properties of films.

Structural and Optical Properties of Mn-Doped ZnO Thin Films Prepared by SILAR Method

2017 ◽  
Vol 73 ◽  
pp. 22-30
Author(s):  
Marimuthu Karunakaran ◽  
S. Maheswari ◽  
Kasinathan Kasirajan ◽  
Sivaji Dinesh Raj ◽  
Rathinam Chandramohan
Keyword(s):  
Thin Films ◽  
Xrd Analysis ◽  
Layer Growth ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Silar Method ◽  
X Ray ◽  
Glass Substrates ◽  
Mn Doped

The growth of highly textured Mn doped Zinc oxide (ZnO) thin films with a preferred (002) orientation has been reported by employing successive ionic layer growth by adsorption reaction (SILAR) using a sodium zincate bath on glass substrates has been reported. The prepared films were characterized by X-ray diffraction (XRD), optical spectroscopy and scanning electron microscopy (SEM) measurement. The XRD analysis reveals that the films were polycrystalline. Morphology of the films was found to be uniform with smaller grains and exhibits a structure with porous. The calculated Band gap value was found to be 3.21 eV prepared at 15 mM MnSO4 concentration.

InSe Nanothin Film with Ar-Gas Low Vacuum Pressure

2014 ◽  
Vol 606 ◽  
pp. 15-18
Author(s):  
Falah I. Mustafa ◽  
Mooroj Ali
Keyword(s):  
Thin Films ◽  
Diffraction Analysis ◽  
Room Temperature ◽  
Energy Gap ◽  
X Ray Diffraction ◽  
Argon Gas ◽  
X Ray ◽  
Glass Substrates ◽  
Deposited Film ◽  
Deposited Films

InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~500nm by thermal evaporation technique. The X-Ray diffraction analysis showed that both the as-deposited films In2Se3and InSe (x= 0.4 and 0.5) are amorphous in nature while the as-deposited film In3Se2is polycrystalline and the values of energy gap are Eg=1.44eV for In2Se3, Eg=1.16eV for InSe and Eg=0.78eV for In3Se2. The same technique used with insert Argon gas at pressure 0.1 mbar where InxSe1-x(x = 0.4, 0.5, 0.6) thin films are deposited at room temperature on glass substrates with thickness ~100nm. The X-Ray diffraction analysis showed that the as-deposited films In2Se3are amorphous in nature while the as-deposited film InSe and In3Se2are Nanocrystalline with grain size 33nm and 55nm respectively and the values of energy gap are Eg=1.55eV for InSe and Eg=1.28eV for In3Se2. The energy gap of InSe thin films increase with Argon gas assist and phases changes from amorphous and polycrystalline to nanostructure material by thermal vacuum deposition technique.

scholarly journals Formation of ZnO films using the SILAR method

Chemija ◽  
2019 ◽  
Vol 30 (2) ◽  
Author(s):  
Birutė Šimkūnaitė-Stanynienė ◽  
Giedrė Grincienė ◽  
Leonas Naruškevičius ◽  
Loreta Tamašauskaitė-Tamašiūnaitė ◽  
Algirdas Selskis ◽  
...  
Keyword(s):  
Optical Properties ◽  
Photoelectron Spectroscopy ◽  
Precursor Solution ◽  
Band Gap Energy ◽  
Zno Films ◽  
X Ray Diffraction ◽  
Silar Method ◽  
X Ray ◽  
Glass Substrates ◽  
Layer Adsorption

The thin ZnO films were deposited using the successive ionic layer adsorption and reaction (SILAR) method. The morphology, structure and composition of the thin ZnO films were examined using scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The optical properties of the thin ZnO layers, which were deposited onto glass substrates, were investigated using ultraviolet–visible spectrophotometry (UV/Vis). It was found that the optical properties of the ZnO films depend on the composition of anionic precursor solutions, which were used for deposition of the ZnO layers. Moreover, the highest band gap energy of 3.86 eV was obtained for the ZnO layer when the 0.026 mol l–1 Na2B4O7 + 0.002 mol l–1 KMnO4 solution was used as the anionic precursor solution for the deposition of ZnO layers.

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