Fracture Toughness of Single Crystal Silicon at High Temperatures.

Simulations of the temperature field in Silicon-on-Insulator (SOI) and strained-Si transistors can benefit from experimental data and modeling of the thin silicon layer thermal conductivity at high temperatures. This work presents the first experimental data for 20 and 100 nm thick single crystal silicon layers at high temperatures and develops algebraic expressions to account for the reduction in thermal conductivity due to the phonon-boundary scattering for pure and doped silicon layers. The model applies to temperatures range 300–1000 K for silicon layer thicknesses from 10 nm to 1 μm (and even bulk) and agrees well with the experimental data. In addition, the model has an excellent agreement with the predictions of thin film thermal conductivity based on thermal conductivity integral and Boltzmann transport equation, although it is significantly more robust and convenient for integration into device simulators. The experimental data and predictions are required for accurate thermal simulation of the semiconductor devices, nanostructures and in particular the SOI and strained-Si transistors.

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Evaluation of the Fracture Toughness of Micro-sized Single Crystal Silicon Wafers

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.125.302 ◽

2005 ◽

Vol 125 (7) ◽

pp. 302-306 ◽

Cited By ~ 1

Author(s):

Satoru Koyama ◽

Kazuki Takashima ◽

Yakichi Higo

Keyword(s):

Fracture Toughness ◽

Single Crystal ◽

Single Crystal Silicon ◽

Silicon Wafers ◽

Crystal Silicon

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Fracture Toughness of Single-Crystal Silicon Carbide

Journal of the American Ceramic Society ◽

10.1111/j.1151-2916.1977.tb15564.x ◽

1977 ◽

Vol 60 (7-8) ◽

pp. 373-375 ◽

Cited By ~ 48

Author(s):

J. L. HENSHALL ◽

D. J. ROWCLIFFE ◽

J. W. EDINGTON

Keyword(s):

Fracture Toughness ◽

Silicon Carbide ◽

Single Crystal ◽

Single Crystal Silicon ◽

Crystal Silicon

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Fracture Toughness Measurement of a Micro-Sized Single Crystal Silicon

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.297-300.292 ◽

2005 ◽

Vol 297-300 ◽

pp. 292-298 ◽

Cited By ~ 8

Author(s):

Satoru Koyama ◽

Kazuki Takashima ◽

Yakichi Higo

Keyword(s):

Fracture Toughness ◽

Single Crystal ◽

Ion Beam ◽

Testing Machine ◽

Single Crystal Silicon ◽

Mems Devices ◽

Type Specimens ◽

Crystal Silicon ◽

Fracture Toughness Measurement ◽

Toughness Measurement

Reliability is one of the most critical issues for designing practical MEMS devices. In particular, the fracture toughness of micro-sized MEMS elements is important, as micro/nano-sized flaws can act as a crack initiation sites to cause failure of such devices. Existing MEMS devices commonly use single crystal silicon. Fracture toughness testing upon micro-sized single crystal silicon was therefore carried out to examine whether a fracture toughness measurement technique, based upon the ASTM standard, is applicable to 1/1000th sized silicon specimens. Notched cantilever beam type specimens were prepared by focused ion beam machining. Two specimens types with different notch orientations were prepared. The notch plane/direction were (100)/[010], and (110)/[ ＿ ,110], respectively. Fracture toughness tests were carried out using a mechanical testing machine for micro-sized specimens. Fracture has been seen to occur in a brittle manner in both orientations. The provisional fracture toughness values (KQ) are 1.05MPam1/2 and 0.96MPam1/2, respectively. These values meet the micro-yielding criteria for plane strain fracture toughness values (KIC). Fracture toughness values for the orientations tested are of the same order as values in the literature. The results obtained in this investigation indicate that the fracture toughness measurement method used is applicable for micro-sized components of single crystal silicon in MEMS devices.

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