As the level of Si-wafer surface directly affects device line-width capability, process
latitude, yield, and throughput in fabrication of microchips, it needs to have ultra precision
surface and flatness. Polishing is one of the important processing having influence on the
surface roughness in manufacturing of Si-wafers. The surface roughness in wafer polishing is
mainly affected by the many process parameters. For decreasing the surface roughness, the
control of polishing parameters is very important. In this paper, the optimum condition selection
of ultra precision wafer polishing and the effect of polishing parameters on the surface
roughness were evaluated by the statistical analysis of the process parameters.
Selection of Levels of Dressing Process Parameters by Using TOPSIS Technique for Surface Roughness of En-31 Work piece in CNC Cylindrical Grinding Machine