Modeling of HgCdTe LWIR detector for high operation temperature conditions

Abstract The paper reports on the photoelectrical performance of the long wavelength infrared (LWIR) HgCdTe high operating temperature (HOT) detector. The detector structure was simulated with commercially available software APSYS by Crosslight Inc. taking into account SRH, Auger and tunnelling currents. A detailed analysis of the detector performance such as dark current, detectivity, time response as a function of device architecture and applied bias is performed, pointing out optimal working conditions.

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MOCVD grown MWIR HgCdTe detectors for high operation temperature conditions

Opto-Electronics Review ◽

10.2478/s11772-014-0186-y ◽

2014 ◽

Vol 22 (2) ◽

Cited By ~ 2

Author(s):

P. Martyniuk ◽

A. Koźniewski ◽

A. Kębłowski ◽

W. Gawron ◽

A. Rogalski

Keyword(s):

Dark Current ◽

Room Temperature ◽

Operating Temperature ◽

Comprehensive Analysis ◽

Time Response ◽

Applied Bias ◽

Detector Performance ◽

Operation Temperature ◽

Device Architecture ◽

Detector Structure

AbstractThe paper reports on photoelectrical performance of the mid-wave infrared HgCdTe detector for high operating temperature condition. Detector structure was simulated with APSYS numerical platform by Crosslight Inc. The comprehensive analysis of the detector performance such as dark current, detectivity, time response vs. device architecture and applied bias has been performed. The N+pP+n+ HgCdTe heterostructure photodiode operating in room temperature at a wavelength range of 2.6–3.6 μm enabled to reach: detectivity ∼8.7×1010 cmHz1/2/W, responsivity ∼1.72 A/W and time response ∼ 145 ps (V = 200 mV).

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High operating temperature InAs/GaSb type-II superlattice detectors on GaAs substrate for the long wavelength infrared

Infrared Physics & Technology ◽

10.1016/j.infrared.2018.10.019 ◽

2019 ◽

Vol 96 ◽

pp. 141-144 ◽

Cited By ~ 7

Author(s):

R. Müller ◽

V. Gramich ◽

M. Wauro ◽

J. Niemasz ◽

L. Kirste ◽

...

Keyword(s):

Gaas Substrate ◽

Operating Temperature ◽

Type Ii ◽

Long Wavelength ◽

High Operating Temperature ◽

Type Ii Superlattice ◽

Long Wavelength Infrared

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Dark Current Simulation and Analysis for InAs/GaSb Long wavelength Infrared Barrier Detectors

Infrared Physics & Technology ◽

10.1016/j.infrared.2021.104006 ◽

2021 ◽

pp. 104006

Author(s):

Su-Ning Cui ◽

Wei-Qiang Chen ◽

Dong-Wei Jiang ◽

Dong-hai Wu ◽

Guo-Wei Wang ◽

...

Keyword(s):

Dark Current ◽

Long Wavelength ◽

Barrier Detectors ◽

Long Wavelength Infrared

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Investigation of Low Frequency Noise-current Correlation for the InAs/GaSb T2SL Long-wavelength Infrared Detector

10.21203/rs.3.rs-487224/v1 ◽

2021 ◽

Author(s):

Liang Wang ◽

Liqi Zhu ◽

Zhicheng Xu ◽

Fangfang Wang ◽

Jianxin Chen ◽

...

Keyword(s):

Dark Current ◽

Reverse Bias ◽

Infrared Detector ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise ◽

Long Wavelength ◽

Noise Current ◽

Current Correlation ◽

Long Wavelength Infrared

Abstract In this paper, a mesa-type 256×8 long-wavelength infrared detector is prepared by using InAs/GaSb type-II superlattice material with double barrieres structure. the area of each pixel is 25×25 μm2. The cut-off wavelength and dark current density of the detector at -0.05 V bias with liquid nitrogen temperature is 11.5 μm and 4.1×10-4 A/cm2, respectively. The power spectrum of low-frequency noise (1/f noise) at different temperatures have also been fitted by the Hooge model, and the correlations with dark current are extracted subsequently. The results shown that the 1/f noise of the detector is mainly caused by the generation-recombination current at a low reverse bias, however, when the reverse bias is high, the 1/f noise should be expressed by the sum of Igr noise and Ibtb noise which is ignored in the previous research. The 1/f noise-current correlation assessed in this work can provide insights into the low frequency noise characteristics of long-wavelength T2SL InAs/GaSb detectors, and allow for a better understanding of the main source of low-frequency noise.

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