Structural Characterization of (Re)Bco Layer Deposited by Pld and Mocvd Techniques

Abstract (RE)BCO thin films prepared by PLD and MOCVD techniques were investigated to characterize structural defects - outgrowths in thin film. For this purpose SEM, EDX analysis and LSCM were used. Outgrowths are often penetrating into the thin films. Evident differences in chemical heterogeneity, outgrowth morphology and outgrowths density between PLD and MOCVD thin films were proven in this study.

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Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

Scientific Reports ◽

10.1038/s41598-021-83476-7 ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Aziz Ahmed ◽

Seungwoo Han

Keyword(s):

Thin Film ◽

Crystal Structure ◽

Thin Films ◽

Stainless Steel ◽

Substrate Temperature ◽

Transport Properties ◽

Structural Defects ◽

Film Composition ◽

High Substrate ◽

Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

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Structural characterization of V2O5–TiO2 thin films deposited by RF sputtering from a titanium target with vanadium insets

Sensors and Actuators B Chemical ◽

10.1016/j.snb.2005.03.080 ◽

2005 ◽

Vol 109 (1) ◽

pp. 47-51 ◽

Cited By ~ 4

Author(s):

I. Alessandri ◽

E. Comini ◽

E. Bontempi ◽

G. Sberveglieri ◽

L.E. Depero

Keyword(s):

Thin Films ◽

Structural Characterization ◽

Rf Sputtering ◽

Tio2 Thin Films ◽

Titanium Target

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Structural Characterization of Amorphous Carbon Nitride Thin Films Prepared by Pulsed Laser Deposition

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.206-213.531 ◽

2001 ◽

Vol 206-213 ◽

pp. 531-534

Author(s):

Yoshifumi Aoi ◽

Kunio Sakurada ◽

Kojiro Ono ◽

Eiji Kamijo

Keyword(s):

Thin Films ◽

Pulsed Laser Deposition ◽

Amorphous Carbon ◽

Structural Characterization ◽

Carbon Nitride ◽

Pulsed Laser ◽

Laser Deposition ◽

Amorphous Carbon Nitride

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Rapid chemical and structural characterization of metastable thin-film libraries by a combination of electron probe microanalysis and scanning x-ray diffraction

Surface and Interface Analysis ◽

10.1002/sia.1388 ◽

2002 ◽

Vol 34 (1) ◽

pp. 686-689 ◽

Cited By ~ 5

Author(s):

R. Cremer ◽

S. Richter

Keyword(s):

Thin Film ◽

Structural Characterization ◽

Electron Probe Microanalysis ◽

Electron Probe ◽

X Ray Diffraction ◽

X Ray

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Structural characterization of electrodeposited EuSe thin films

Materials Research Bulletin ◽

10.1016/s0025-5408(01)00756-5 ◽

2001 ◽

Vol 36 (15) ◽

pp. 2613-2626 ◽

Cited By ~ 4

Author(s):

N.S Gaikwad ◽

C.H Bhosale

Keyword(s):

Thin Films ◽

Structural Characterization

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Reactive UHV Sputtering and Structural Characterization of Epitaxial AlN/6H-SiC(0001) Thin Films

Materials Science Forum ◽

10.4028/www.scientific.net/msf.264-268.1225 ◽

1998 ◽

Vol 264-268 ◽

pp. 1225-1228 ◽

Cited By ~ 4

Author(s):

Sukkaneste Tungasmita ◽

Jens Birch ◽

L. Hultman ◽

Erik Janzén ◽

J.-E. Sundgren

Keyword(s):

Thin Films ◽

Structural Characterization

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Optical absorption and structural characterization of reactively sputtered tellurium suboxide thin films

Applied Surface Science ◽

10.1016/0169-4332(93)90678-5 ◽

1993 ◽

Vol 65-66 ◽

pp. 313-318 ◽

Cited By ~ 8

Author(s):

M. Di Giulio ◽

M.C. Nicotra ◽

M. Re ◽

R. Rella ◽

P. Siciliano

Keyword(s):

Thin Films ◽

Optical Absorption ◽

Structural Characterization

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Preparation and Structural Characterization of hcp and fcc Ni Epitaxial Thin Films on Ru Underlayers with Different Orientations

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.063001 ◽

2011 ◽

Vol 50 (6) ◽

pp. 063001 ◽

Cited By ~ 2

Author(s):

Jumpei Higuchi ◽

Mitsuru Ohtake ◽

Yoichi Sato ◽

Tsutomu Nishiyama ◽

Masaaki Futamoto

Keyword(s):

Thin Films ◽

Structural Characterization ◽

Epitaxial Thin Films

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Optical and structural characterization of pulsed laser deposited ruby thin films for temperature sensing application

Applied Surface Science ◽

10.1016/j.apsusc.2012.10.163 ◽

2013 ◽

Vol 265 ◽

pp. 180-186 ◽

Cited By ~ 21

Author(s):

Satchi Kumari ◽

Alika Khare

Keyword(s):

Thin Films ◽

Structural Characterization ◽

Pulsed Laser ◽

Temperature Sensing ◽

Sensing Application

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The Ferroelectric and Electrical Properties of CaBi4Ti4O15 Thin Films Prepared by Sol-Gel Technology

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.239-242.891 ◽

2011 ◽

Vol 239-242 ◽

pp. 891-894 ◽

Cited By ~ 3

Author(s):

Tsung Fu Chien ◽

Jen Hwan Tsai ◽

Kai Huang Chen ◽

Chien Min Cheng ◽

Chia Lin Wu

Keyword(s):

Thin Film ◽

Thin Films ◽

Sol Gel ◽

Morphological Characterization ◽

Experimental Result ◽

X Ray Diffraction ◽

Solution Deposition ◽

Capacitance Voltage ◽

Preferential Crystal Orientation

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C

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