scholarly journals Special issue on semiconductors - Materials and processing technologies. Single slice plasma etching system.

1985 ◽  
Vol 51 (7) ◽  
pp. 1318-1321
Author(s):  
MICHIO NAGASAKA
Keyword(s):  
Plasma Etching ◽  
Special Issue ◽  
Processing Technologies ◽  
Single Slice ◽  
Etching System

scholarly journals A Facile, Low-Cost Plasma Etching Method for Achieving Size Controlled Non-Close-Packed Monolayer Arrays of Polystyrene Nano-Spheres

Nanomaterials ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 605 ◽  
Author(s):  
Yun Chen ◽  
Dachuang Shi ◽  
Yanhui Chen ◽  
Xun Chen ◽  
Jian Gao ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Silicon Nanowires ◽  
High Frequency ◽  
Low Cost ◽  
Etching Rate ◽  
Low Frequency ◽  
Etching Time ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Etching System

Monolayer nano-sphere arrays attract great research interest as they can be used as templates to fabricate various nano-structures. Plasma etching, and in particular high-frequency plasma etching, is the most commonly used method to obtain non-close-packed monolayer arrays. However, the method is still limited in terms of cost and efficiency. In this study, we demonstrate that a low frequency (40 kHz) plasma etching system can be used to fabricate non-close-packed monolayer arrays of polystyrene (PS) nano-spheres with smooth surfaces and that the etching rate is nearly doubled compared to that of the high-frequency systems. The study reveals that the low-frequency plasma etching process is dominated by a thermal evaporation etching mechanism, which is different from the atom-scale dissociation mechanism that underlines the high-frequency plasma etching. It is found that the polystyrene nano-sphere size can be precisely controlled by either adjusting the etching time or power. Through introducing oxygen as the assisting gas in the low frequency plasma etching system, we achieved a coalesced polystyrene nano-sphere array and used it as a template for metal-assisted chemical etching. We demonstrate that the method can significantly improve the aspect ratio of the silicon nanowires to over 200 due to the improved flexure rigidity.

Etching of CoFeB Using CO∕NH[sub 3] in an Inductively Coupled Plasma Etching System

2011 ◽  
Vol 158 (1) ◽  
pp. H1 ◽  
Author(s):  
Jong-Yoon Park ◽  
Se-Koo Kang ◽  
Min-Hwan Jeon ◽  
Myung S. Jhon ◽  
Geun-Young Yeom
Keyword(s):  
Plasma Etching ◽  
Inductively Coupled Plasma ◽  
Inductively Coupled Plasma Etching ◽  
Inductively Coupled ◽  
Etching System

An Autonomously Controllable Plasma Etching System Based on Radical Monitoring

2012 ◽  
Vol 51 ◽  
pp. 076502
Author(s):  
Shunji Takahashi ◽  
Ryota Kawauchi ◽  
Seigo Takashima ◽  
Shoji Den ◽  
Toshiro Katagiri ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Etching System

scholarly journals Development of Localized Plasma Etching System for Failure Analyses in Semiconductor Devices: (4)Precise Temperature Measured during Plasma Etching

2012 ◽  
Vol 55 (4) ◽  
pp. 176-179 ◽  
Author(s):  
Chikatsu IWASE ◽  
Yuya SHIRAYAMA ◽  
Shuntaro YOKOSUKA ◽  
Kenta KASHIMURA ◽  
Akihiro HAYASHI ◽  
...  
Keyword(s):  
Plasma Etching ◽  
Semiconductor Devices ◽  
Etching System

scholarly journals CCP and ICP Combination Impedance Matching Device for Uniformity Improvement of Semiconductor Plasma Etching System

2010 ◽  
Vol 15 (4) ◽  
pp. 274-281
Author(s):  
Doo-Yong Jung ◽  
Chang-Woo Nam ◽  
Jong-Ho Lee ◽  
Dae-Kyu Choi ◽  
Chung-Yuen Won
Keyword(s):  
Plasma Etching ◽  
Impedance Matching ◽  
Semiconductor Plasma ◽  
Etching System
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