scholarly journals MICROWAVE SCATTERING FROM METAMATERIAL BASED SPHERES IN THE PRESENCE OF A CONDUCTING PLANE: NORMAL INCIDENCE

2016 ◽  
Vol 46 ◽  
pp. 57-68
Author(s):  
Adnan Jamil ◽  
Tenneti C. K. Rao
Keyword(s):  
Normal Incidence ◽  
Conducting Plane ◽  
Microwave Scattering ◽  
Plane Normal

Reconstruction of Objects from their Projections Using Orthogonal Functions

1973 ◽  
Vol 31 ◽  
pp. 268-269
Author(s):  
Elrnar Zeitler
Keyword(s):  
Unit Area ◽  
Three Dimensional ◽  
One Dimension ◽  
Spatial Density ◽  
Dimensional Representation ◽  
Orthogonal Functions ◽  
Object A ◽  
Plane Normal ◽  
Dimensional Object ◽  
Spatial Density Distribution

Considering any finite three-dimensional object, a “projection” is here defined as a two-dimensional representation of the object's mass per unit area on a plane normal to a given projection axis, here taken as they-axis. Since the object can be seen as being built from parallel, thin slices, the relation between object structure and its projection can be reduced by one dimension. It is assumed that an electron microscope equipped with a tilting stage records the projectionWhere the object has a spatial density distribution p(r,ϕ) within a limiting radius taken to be unity, and the stage is tilted by an angle 9 with respect to the x-axis of the recording plane.

Analysis of Contrast Reversal in SEM Images

1972 ◽  
Vol 30 ◽  
pp. 398-399
Author(s):  
M. D. Coutts ◽  
E. R. Levin
Keyword(s):  
Incident Beam ◽  
Normal Incidence ◽  
Beam Current ◽  
Secondary Emission ◽  
Image Contrast ◽  
Sem Images ◽  
Secondary Electrons ◽  
Image Position

On tilting samples in an SEM, the image contrast between two elements, x and y often decreases to zero at θε, which we call the no-contrast angle. At angles above θε the contrast is reversed, θ being the angle between the specimen normal and the incident beam. The available contrast between two elements, x and y, in the SEM can be defined as,(1)where ix and iy are the total number of reflected and secondary electrons, leaving x and y respectively. It can easily be shown that for the element x,(2)where ib is the beam current, isp the specimen absorbed current, δo the secondary emission at normal incidence, k is a constant, and m the reflected electron coefficient.

Observation of secondary slip systems in tungsten bicrystals

1984 ◽  
Vol 42 ◽  
pp. 478-479
Author(s):  
J. R. Fekete ◽  
R. Gibala
Keyword(s):  
Stress Field ◽  
Grain Boundaries ◽  
Deformation Behavior ◽  
Stress Axis ◽  
Polycrystalline Materials ◽  
Slip Systems ◽  
Metallic Materials ◽  
Twist Boundary ◽  
Secondary Slip ◽  
Plane Normal

The deformation behavior of metallic materials is modified by the presence of grain boundaries. When polycrystalline materials are deformed, additional stresses over and above those externally imposed on the material are induced. These stresses result from the constraint of the grain boundaries on the deformation of incompatible grains. This incompatibility can be elastic or plastic in nature. One of the mechanisms by which these stresses can be relieved is the activation of secondary slip systems. Secondary slip systems have been shown to relieve elastic and plastic compatibility stresses. The deformation of tungsten bicrystals is interesting, due to the elastic isotropy of the material, which implies that the entire compatibility stress field will exist due to plastic incompatibility. The work described here shows TEM observations of the activation of secondary slip in tungsten bicrystals with a [110] twist boundary oriented with the plane normal parallel to the stress axis.

Characterization of Rh/Si multilayer structure by HREM and HAADF

1992 ◽  
Vol 50 (1) ◽  
pp. 122-123
Author(s):  
Y. Cheng ◽  
J. Liu ◽  
M.B. Stearns ◽  
D.G. Steams
Keyword(s):  
Normal Incidence ◽  
High Resolution Electron Microscopy ◽  
X Rays ◽  
Beam Direction ◽  
Cross Sectional ◽  
Optical Elements ◽  
Resolution Electron ◽  
Point To Point ◽  
Better Than

The Rh/Si multilayer (ML) thin films are promising optical elements for soft x-rays since they have a calculated normal incidence reflectivity of ∼60% at a x-ray wavelength of ∼13 nm. However, a reflectivity of only 28% has been attained to date for ML fabricated by dc magnetron sputtering. In order to determine the cause of this degraded reflectivity the microstructure of this ML was examined on cross-sectional specimens with two high-resolution electron microscopy (HREM and HAADF) techniques.Cross-sectional specimens were made from an as-prepared ML sample and from the same ML annealed at 298 °C for 1 and 100 hours. The specimens were imaged using a JEM-4000EX TEM operating at 400 kV with a point-to-point resolution of better than 0.17 nm. The specimens were viewed along Si [110] projection of the substrate, with the (001) Si surface plane parallel to the beam direction.

Defect structures of Nb1+αS2 sulfidation scales

1992 ◽  
Vol 50 (1) ◽  
pp. 38-39
Author(s):  
Chuxin Zhou ◽  
L. W. Hobbs
Keyword(s):  
Stacking Faults ◽  
Rhombohedral Structure ◽  
Stacking Sequence ◽  
Defect Structures ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plane Normal ◽  
Lower Case ◽  
Sulfur Layer ◽  
Two Phases

One of the major purposes in the present work is to study the high temperature sulfidation properties of Nb in severe sulfidizing environments. Kinetically, the sulfidation rate of Nb is satisfactorily slow, but the microstructures and non-stoichiometry of Nb1+αS2 challenge conventional oxidation/sulfidation theory and defect models of non-stoichiometric compounds. This challenge reflects our limited knowledge of the dependence of kinetics and atomic migration processes in solid state materials on their defect structures.Figure 1 shows a high resolution image of a platelet from the middle portion of the Nb1+αS2 scale. A thin lamellar heterogeneity (about 5nm) is observed. From X-ray diffraction results, we have shown that Nb1+αS2 scale is principally rhombohedral structure, but 2H-NbS2 can result locally due to stacking faults, because the only difference between these 2H and 3R phases is variation in the stacking sequence along the c axis. Following an ABC notation, we use capital letters A, B and C to represent the sulfur layer, and lower case letters a, b and c to refer to Nb layers. For example, the stacking sequence of 2H phase is AbACbCA, which is a ∼12Å period along the c axis; the stacking sequence of 3R phase is AbABcBCaCA to form an ∼18Å period along the c axis. Intergrowth of these two phases can take place at stacking faults or by a shear in the basal plane normal to the c axis.

On resolving fine periodic microstructures in the optical microscope

1989 ◽  
Vol 47 ◽  
pp. 364-365
Author(s):  
W.S. Putnam ◽  
C. Viney
Keyword(s):  
Liquid Crystalline ◽  
Numerical Aperture ◽  
Polarized Light ◽  
Normal Incidence ◽  
Optical Microscope ◽  
Angle Of Incidence ◽  
Resolution Limit ◽  
Crystalline Materials ◽  
Periodic Microstructures ◽  
Liquid Crystalline Materials

Many sheared liquid crystalline materials (fibers, films and moldings) exhibit a fine banded microstructure when observed in the polarized light microscope. In some cases, for example Kevlar® fiber, the periodicity is close to the resolution limit of even the highest numerical aperture objectives. The periodic microstructure reflects a non-uniform alignment of the constituent molecules, and consequently is an indication that the mechanical properties will be less than optimal. Thus it is necessary to obtain quality micrographs for characterization, which in turn requires that fine detail should contribute significantly to image formation.It is textbook knowledge that the resolution achievable with a given microscope objective (numerical aperture NA) and a given wavelength of light (λ) increases as the angle of incidence of light at the specimen surface is increased. Stated in terms of the Abbe resolution criterion, resolution improves from λ/NA to λ/2NA with increasing departure from normal incidence.

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