scholarly journals Reusable Chemically-Micropatterned Substrates via Sequential Photoinitiated Thiol-Ene Reactions as Template for Perovskite Thin-Film Microarrays

2019 ◽  
Author(s):  
Kurt Waldo E. Sy Piecco ◽  
Juvinch R. Vicente ◽  
Joseph R. Pyle ◽  
David C. Ingram ◽  
Martin E. Kordesch ◽  
...  
Keyword(s):  
Thin Film ◽  
Carboxylic Acid ◽  
Organic Solvents ◽  
Spin Coating ◽  
Precursor Solution ◽  
Contact Angles ◽  
Patterned Substrates ◽  
Semiconducting Materials ◽  
Ene Reactions ◽  
Patterned Surface

<p>Patterning semiconducting materials are important for many applications such as microelectronics, displays, and photodetectors. Lead halide perovskites are an emerging class of semiconducting materials that can be patterned via solution-based methods. Here we report an all-benchtop patterning strategy by first generating a patterned surface with contrasting wettabilities to organic solvents that have been used in the perovskite precursor solution then spin-coating the solution onto the patterned surface. The precursor solution only stays in the area with higher affinity (wettability). We applied sequential sunlight-initiated thiol-ene reactions to functionalize (and pattern) both glass and conductive fluorine-doped tin oxide (FTO) transparent glass surfaces. The functionalized surfaces were measured with the solvent contact angles of water and different organic solvents and were further characterized by XPS, selective fluorescence staining, and selective DNA adsorption. By simply spin-coating and baking the perovskite precursor solution on the patterned substrates, we obtained perovskite thin-film microarrays. The spin-coated perovskite arrays were characterized by XRD, AFM, and SEM. We concluded that Patterned substrate prepared via sequential sunlight-initiated thiol-ene click reactions is suitable to fabricate perovskite arrays via the benchtop process. In addition, the same patterned substrates can be reused several times until a favorable perovskite microarray is acquired. Among a few conditions we have tested, DMSO solvent and modified FTO surfaces with alternatively carboxylic acid and alkane is the best combination to obtain high-quality perovskite microarrays. The solvent contact angle of DMSO on carboxylic acid-modified FTO surface is nearly zero and 65±3<sup>o</sup> on octadecane modified FTO surface.</p>

scholarly journals Reusable Chemically-Micropatterned Substrates via Sequential Photoinitiated Thiol-Ene Reactions as Template for Perovskite Thin-Film Microarrays

2019 ◽  
Author(s):  
Kurt Waldo E. Sy Piecco ◽  
Juvinch R. Vicente ◽  
Joseph R. Pyle ◽  
David C. Ingram ◽  
Martin E. Kordesch ◽  
...  
Keyword(s):  
Thin Film ◽  
Carboxylic Acid ◽  
Organic Solvents ◽  
Spin Coating ◽  
Precursor Solution ◽  
Contact Angles ◽  
Patterned Substrates ◽  
Semiconducting Materials ◽  
Ene Reactions ◽  
Patterned Surface

<p>Patterning semiconducting materials are important for many applications such as microelectronics, displays, and photodetectors. Lead halide perovskites are an emerging class of semiconducting materials that can be patterned via solution-based methods. Here we report an all-benchtop patterning strategy by first generating a patterned surface with contrasting wettabilities to organic solvents that have been used in the perovskite precursor solution then spin-coating the solution onto the patterned surface. The precursor solution only stays in the area with higher affinity (wettability). We applied sequential sunlight-initiated thiol-ene reactions to functionalize (and pattern) both glass and conductive fluorine-doped tin oxide (FTO) transparent glass surfaces. The functionalized surfaces were measured with the solvent contact angles of water and different organic solvents and were further characterized by XPS, selective fluorescence staining, and selective DNA adsorption. By simply spin-coating and baking the perovskite precursor solution on the patterned substrates, we obtained perovskite thin-film microarrays. The spin-coated perovskite arrays were characterized by XRD, AFM, and SEM. We concluded that Patterned substrate prepared via sequential sunlight-initiated thiol-ene click reactions is suitable to fabricate perovskite arrays via the benchtop process. In addition, the same patterned substrates can be reused several times until a favorable perovskite microarray is acquired. Among a few conditions we have tested, DMSO solvent and modified FTO surfaces with alternatively carboxylic acid and alkane is the best combination to obtain high-quality perovskite microarrays. The solvent contact angle of DMSO on carboxylic acid-modified FTO surface is nearly zero and 65±3<sup>o</sup> on octadecane modified FTO surface.</p>

scholarly journals Reusable Chemically-Micropatterned Substrates via Sequential Photoinitiated Thiol-Ene Reactions as Template for Perovskite Thin-Film Microarrays

2019 ◽  
Author(s):  
Kurt Waldo E. Sy Piecco ◽  
Juvinch R. Vicente ◽  
Joseph R. Pyle ◽  
David C. Ingram ◽  
Martin E. Kordesch ◽  
...  
Keyword(s):  
Thin Film ◽  
Carboxylic Acid ◽  
Organic Solvents ◽  
Spin Coating ◽  
Precursor Solution ◽  
Contact Angles ◽  
Patterned Substrates ◽  
Semiconducting Materials ◽  
Ene Reactions ◽  
Patterned Surface

<p>Patterning semiconducting materials are important for many applications such as microelectronics, displays, and photodetectors. Lead halide perovskites are an emerging class of semiconducting materials that can be patterned via solution-based methods. Here we report an all-benchtop patterning strategy by first generating a patterned surface with contrasting wettabilities to organic solvents that have been used in the perovskite precursor solution then spin-coating the solution onto the patterned surface. The precursor solution only stays in the area with higher affinity (wettability). We applied sequential sunlight-initiated thiol-ene reactions to functionalize (and pattern) both glass and conductive fluorine-doped tin oxide (FTO) transparent glass surfaces. The functionalized surfaces were measured with the solvent contact angles of water and different organic solvents and were further characterized by XPS, selective fluorescence staining, and selective DNA adsorption. By simply spin-coating and baking the perovskite precursor solution on the patterned substrates, we obtained perovskite thin-film microarrays. The spin-coated perovskite arrays were characterized by XRD, AFM, and SEM. We concluded that Patterned substrate prepared via sequential sunlight-initiated thiol-ene click reactions is suitable to fabricate perovskite arrays via the benchtop process. In addition, the same patterned substrates can be reused several times until a favorable perovskite microarray is acquired. Among a few conditions we have tested, DMSO solvent and modified FTO surfaces with alternatively carboxylic acid and alkane is the best combination to obtain high-quality perovskite microarrays. The solvent contact angle of DMSO on carboxylic acid-modified FTO surface is nearly zero and 65±3<sup>o</sup> on octadecane modified FTO surface.</p>

Effects of Drying Temperature on Surface Morphology and Electric Behavior of IGZO Thin Film Prepared by Solution Process

2015 ◽  
Vol 1731 ◽  
Author(s):  
Nobuko Fukuda ◽  
Shintaro Ogura ◽  
Koji Abe ◽  
Hirobumi Ushijima
Keyword(s):  
Thin Film ◽  
Organic Solvents ◽  
Room Temperature ◽  
Thin Film Transistor ◽  
Solution Process ◽  
Precursor Solution ◽  
Drying Process ◽  
Minor Variation ◽  
Drying Temperature ◽  
Metal Nitrates

ABSTRACTWe have achieved a drastic improvement of the performance as thin film transistor (TFT) for solution-processed IGZO thin film by controlling drying temperature of solvents containing the precursor solution. The IGZO-precursor solution was prepared by mixing of metal nitrates and two kinds of organic solvents, 2-methoxyethanol (2ME) and 2,2,2-trifluoroethanol (TFE). 2ME was used for dissolving metal nitrates. TFE was added as a solvent for reducing surface tension as small as possible, leading to improvement of the wettability of the precursor solution on the surface of the substrate. In order to discuss the relationship between morphology and drying process, the spin-coated IGZO-precursor films were dried at room temperature and 140 °C on a hotplate, respectively. Annealing of the both films was carried out at 300 °C in an electric oven for 60 min after each drying process. Drying at room temperature provides a discontinuous film, resulting in a large variation of the TFT performance. On the other hand, drying at 140 °C provides a continuous film, resulting in the higher TFT performance and a minor variation. The difference in surface morphologies would be derived from the evaporation rate of the organic solvents. The rapid evaporation at 140 °C brings about rapid pinning of the spin-coated precursor layer on the substrate. Preparation process via the drying at 140 °C gave ∼ 1 cm2 V-1 s-1 of the saturated mobility, quite small hysteresis, and 107∼ 108 of the on-off ratio.

Spin Coating Deposition of c-Oriented Wurtzite Gallium Nitride Thin Film

2014 ◽  
Vol 699 ◽  
pp. 70-75
Author(s):  
Chee Yong Fong ◽  
Sha Shiong Ng ◽  
Fong Kwong Yam ◽  
Abu Hassan Haslan ◽  
Hassan Zainuriah
Keyword(s):  
Thin Film ◽  
Gallium Nitride ◽  
Spin Coating ◽  
Sol Gel ◽  
Precursor Solution ◽  
Wurtzite Structure ◽  
Structural Quality ◽  
Simple Method ◽  
Radio Frequency Sputtering

Spin coating growth and characterisations ofc-oriented wurtzite structure gallium nitride (GaN) thin film on silicon (Si) substrate with (100) orientation was reported. The precursor solution consisted of a readily available gallium (III) nitrate hydrate powder, ethanol and diethanolamine as starting material, solvent and surfactant. All the structural and optical results showed thatc-oriented wurtzite GaN thin film was deposited on Si (100) substrate. Compared with earlier reported work using sol-gel deposition, significant improvements in the structural quality of the GaN thin film were observed. The FWHM value of the thin film was approximately 2.60°. The framework described here is both an easy in setup and simple method as compared to other method such as MBE, MOCVD, and radio frequency sputtering to producec-oriented wurtzite structure GaN thin film.

scholarly journals Effect of Aging Time on the Synthesis of Fe-doped TiO2 Thin Films by Spin Coating Method

2016 ◽  
Vol 1 ◽  
Author(s):  
Dahyunir Dahlan
Keyword(s):  
Thin Film ◽  
Aging Time ◽  
Spin Coating ◽  
Anatase Phase ◽  
Precursor Solution ◽  
Coating Process ◽  
Titanium Butoxide ◽  
Spin Coating Process ◽  
Spin Coating Method ◽  
Coating Method

<p>The synthesis of Fe-doped TiO<sub>2</sub> thin film using spin coating method was studied. Effects of aging time on the deposited thin film were investigated. Titanium butoxide (C<sub>16</sub>H<sub>36</sub>O<sub>4</sub>Ti) as a precursor solution was mixed with the FeCl<sub>3</sub>. Spin coating process was carried out on three types of precursor solution: (1) spin-coating process performed immediately after the precursor solution was made, (2) spin-coating process performed after solution was aged for 24 hours, (3) aged for 24 and (4) spin-coating after aging the precursor for 72 hours. Heating was carried out on the resulting thin film at temperature of 400 °C. The morphology of TiO<sub>2</sub> layers was characterized using Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). Elemental and phase composition of the films was determined using EDX and X-ray diffraction (XRD). We found that the best TiO<sub>2</sub> layer is obtained when spin-coating process is done after aging the precursor for 72 hours. The layer shows a more uniform particle distribution on the substrate and a more monodisperse particle size dominated by the anatase phase.</p>

Effect of the Precursor Solution Concentration of CuI Thin Film Deposited by Spin Coating Method

2011 ◽  
Vol 364 ◽  
pp. 417-421
Author(s):  
Muhamad Nur Amalina ◽  
Muhammad Atiq Azman ◽  
Mohamad Mahmood Rusop
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Band Gap ◽  
Spin Coating ◽  
Precursor Solution ◽  
Solution Concentration ◽  
Precursor Concentration ◽  
High Concentration ◽  
Spin Coating Method ◽  
Coating Method

In this research, the effect of precursor concentration of CuI thin film deposited by spin coating method was studied. The wide band gap p-type semiconductor CuI thin film was prepared by mixing the CuI powder with 50 ml of acetonitrile as a solvent. The CuI concentration varies from 0.05M to 0.5M. The speed for spin coating is 1000 rpm for 60 seconds. After the deposition the CuI thin films were annealed at 150°C. The result shows the CuI thin film properties strongly depends on its precursor concentration. Thickness between 33.65 nm - 441.25 nm was obtained as the concentration increased. The increment of thickness affected the electrical property with resistivity of about 10-6 Ω.cm and 101 Ω.cm was observed for all the CuI thin films. For optical properties, the transmittance decreased with high concentration as high amount of CuI particle were observed in the thin films. From the transmittance, the absorption coefficient of 10-6 m-1 and optical band gap of 3.10 and 3.50 eV for all the films were observed using Tauc’s plot.

scholarly journals Effect of Aging Time on the Synthesis of Fe-doped TiO2 Thin Films by Spin Coating Method

2016 ◽  
Vol 1 (1) ◽  
Author(s):  
Dahyunir Dahlan
Keyword(s):  
Thin Film ◽  
Aging Time ◽  
Spin Coating ◽  
Anatase Phase ◽  
Precursor Solution ◽  
Coating Process ◽  
Titanium Butoxide ◽  
Spin Coating Process ◽  
Spin Coating Method ◽  
Coating Method

<p>The synthesis of Fe-doped TiO<sub>2</sub> thin film using spin coating method was studied. Effects of aging time on the deposited thin film were investigated. Titanium butoxide (C<sub>16</sub>H<sub>36</sub>O<sub>4</sub>Ti) as a precursor solution was mixed with the FeCl<sub>3</sub>. Spin coating process was carried out on three types of precursor solution: (1) spin-coating process performed immediately after the precursor solution was made, (2) spin-coating process performed after solution was aged for 24 hours, (3) aged for 24 and (4) spin-coating after aging the precursor for 72 hours. Heating was carried out on the resulting thin film at temperature of 400 °C. The morphology of TiO<sub>2</sub> layers was characterized using Scanning Electron Microscope (SEM) and Atomic Force Microscope (AFM). Elemental and phase composition of the films was determined using EDX and X-ray diffraction (XRD). We found that the best TiO<sub>2</sub> layer is obtained when spin-coating process is done after aging the precursor for 72 hours. The layer shows a more uniform particle distribution on the substrate and a more monodisperse particle size dominated by the anatase phase.</p>

Mo-doped, Cr-Doped, and Mo–Cr codoped TiO2 thin-film photocatalysts by comparative sol-gel spin coating and ion implantation

2021 ◽  
Vol 46 (24) ◽  
pp. 12961-12980
Author(s):  
Amanda Chen ◽  
Wen-Fan Chen ◽  
Tina Majidi ◽  
Bernadette Pudadera ◽  
Armand Atanacio ◽  
...  
Keyword(s):  
Thin Film ◽  
Ion Implantation ◽  
Spin Coating ◽  
Tio2 Thin Film ◽  
Sol Gel ◽  
Codoped Tio2

SrTiO3 Functional Ceramics Thin Film Prepared by Self-Assembled Monolayers with the Liquid Phase Deposition Method on Silicon Substrates

2010 ◽  
Vol 105-106 ◽  
pp. 270-273
Author(s):  
Hui Jun Ren ◽  
Guo Qiang Tan ◽  
Hong Yan Miao ◽  
Ya Yu Song ◽  
Ao Xia
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Liquid Phase ◽  
Deposition Temperature ◽  
Precursor Solution ◽  
Self Assembled Monolayers ◽  
Silicon Substrates ◽  
Liquid Phase Deposition ◽  
Assembled Monolayers ◽  
Surface Contact Angle

In this article, (NH4)2TiF6, SrNO3 and H3BO3 were used as raw materials to prepare the precursor solution with the ratio of AHFT/SN/BA=1:1:3. The thin films of SrTiO3 were fabricated on the functional silicon substrates (100) by self-assembled monolayers (SAMs) with the liquid phase deposition (LPD). This article also studied the effects of wet state and the deposition temperature of the precursor solution before and after the functionalization of silicon substrate on the thin film growth. The results indicated that after the immersion in OTS for 30min, the surface contact angle of the silicon substrate changed from 24.64° to 100.91°. The substrate appeared hydrophobic property and it was irradiated by UV light for 30min. Then the surface contact angle of the substrate decreased to 5.00°. The substrate appeared hydrophilicity. The concentration of the precursor solution was 0.025 mol/L, the deposition temperature was 40°C and the deposition time was 9h, which were all helpful to SrTiO3 crystallization. XRD and SEM were used to characterize the physical phase of thin film and surface morphology at 600 °C with annealing and heat retaining for 2h. The results indicated that the thin film prepared by the mono-crystal Si substrate was SrTiO3 thin film with better crystalline. On the crystal surfaces of (110), (100), (200) and (211), there appeared the obvious diffraction peaks. The SrTiO3 grains on the surface had the clear outline and were regular and long columnar crystals.

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