scholarly journals STRUCTURAL ANALYSIS OF ZINC OXIDE THIN FILMS PREPARED BY THERMAL EVAPORATION TECHNIQUE

2017 ◽  
Vol 4 (3) ◽  
pp. 7-9
Author(s):  
Balaganesh A.s ◽  
Chandar Shekar B
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Structural Analysis ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Xrd Analysis ◽  
Zno Films ◽  
Thermal Evaporation Technique ◽  
Oxide Thin Films ◽  
Evaporation Technique

Zinc oxide thin films of 800nm were successfully prepared by thermal evaporation technique. XRD analysis revealed polycrystalline nature of the as prepared ZnO films. The structural parameters such as crystallite size, dislocation density and micro strain were evaluated and discussed.

Tin Oxide Thin Films Prepared by Thermal Evaporation Technique Under Different Vacuum Conditions

2012 ◽  
Vol 4 (3) ◽  
pp. 230-236 ◽  
Author(s):  
Parveen Jain ◽  
Sukhvir Singh ◽  
Azher Majid Siddqui ◽  
Avanish Kumar Srivastava
Keyword(s):  
Thin Films ◽  
Tin Oxide ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Oxide Thin Films ◽  
Evaporation Technique

Structural, optical and electrical properties of thermal evaporated nano sized In2Te3 thin films

2018 ◽  
Vol 1 (1) ◽  
pp. 21-25
Author(s):  
R Revathi ◽  
R Karunathan
Keyword(s):  
Thin Films ◽  
Negative Temperature Coefficient ◽  
Thermal Evaporation ◽  
Structural Parameters ◽  
Negative Temperature ◽  
Resistivity Measurements ◽  
Allowed Transition ◽  
Evaporation Technique ◽  
Indium Telluride ◽  
Made In

Indium Telluride thin films were prepared by thermal evaporation technique. Films were annealed at 573K under vacuum for an hour. Both as-deposited and annealed films were used for characterization. The structural parameters were discussed on the basis of annealing effect for a film of thickness 1500 Å. Optical analysis was carried out on films of different thicknesses for both as - deposited and annealed samples. Both the as- deposited and annealed films exhibit direct and allowed transition. Electrical resistivity measurements were made in the temperature range of 303-473 K using Four-probe method. The calculated resistivity value is of the order of 10-6 ohm meter. The activation energy value decreases with increasing film thickness. The negative temperature coefficient indicates the semiconducting nature of the film.

Ellipsometric analysis of Cd1−xZnxSe thin films prepared by a thermal evaporation technique

2011 ◽  
Vol 83 (6) ◽  
pp. 065706 ◽  
Author(s):  
Arshad Mahmood ◽  
Shaista R ◽  
A Shah ◽  
U Aziz ◽  
E Ahmed ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Thermal Evaporation Technique ◽  
Evaporation Technique

Stability Studies on Optical and Structure Properties of Zinc Oxide Thin Films Exposed to Different Environment

2013 ◽  
Vol 667 ◽  
pp. 549-552
Author(s):  
A.S.M. Rodzi ◽  
Mohamad Hafiz Mamat ◽  
M.N. Berhan ◽  
Mohamad Rusop Mahmood
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Zinc Oxide ◽  
Absorption Coefficient ◽  
Near Infrared ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Zno Films ◽  
Zno Thin Film ◽  
Oxide Thin Films

The properties of zinc oxide thin films were prepared by sol-gel spin-coating method have been presented. This study based on optical and electrical properties of ZnO thin film. The effects of annealing temperatures that exposed with two environments properties have been investigated. Environments exposed in room (27°C) and hot (80°C) temperatures which are stored by various days. Solution preparation, thin film deposition and characterization process were involved in this project. The ZnO films were characterized using UV-Vis-NIR spectrophotometer for optical properties. From that equipment, the percentage of transmittance (%) and absorption coefficient spectra were obtained. With two environments showed have different absorption coefficient are reveal and all films have low absorbance in visible and near infrared (IR) region but have high UV absorption properties. From SEM investigations the surface morphology of ZnO thin film shows the particles size become smaller and denser in hot temperatures while in room temperatures have porosity between particles.

Electrical conductivity studies of mixed phthalocyanine thin films

Open Physics ◽  
2005 ◽  
Vol 3 (1) ◽  
Author(s):  
Abraham Varghese ◽  
C. Menon
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Room Temperature ◽  
Optical Band Gap ◽  
Thermal Evaporation ◽  
Copper Phthalocyanine ◽  
Thermal Evaporation Technique ◽  
Nickel Phthalocyanine ◽  
Mixed Films ◽  
Evaporation Technique

AbstractThin films of mixed of Copper Phthalocyanine (CuPc) and Nickel Phthalocyanine (NiPc) are deposited onto a pure glass substrate by a simultaneous thermal evaporation technique at room temperature. The material D.C. electrical conductivity of films at room temperature and also films annealed at 523 K has been investigated. The optical absorption and band gaps of the films are also measured. The results show that the electrical resistance is lower for the mixed films compared with the pure samples and also the optical band gap decreases for the mixed samples compared to the pure samples.

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