scholarly journals INVESTIGATION OF LOSSES IN SILICON AT MICROWAVE FREQUENCIES

2019 ◽  
Author(s):  
Mikhail Romodin ◽  
Aleksei Dorofeev ◽  
Petr Panasenko ◽  
Sergei Fedotov ◽  
Aleksandr Tsarev
Keyword(s):  
Silicon Substrate ◽  
Microwave Frequencies ◽  
Microwave Losses ◽  
Gan Heterostructure

In this work basic mechanisms of microwave losses in silicon substrate and at the interfacial Si/heterostructure AlGaN/GaN for HEMTs and MMIC were investigated. Methods for reducing of losses were proposed. Requirements to resistivity of silicon substrate taking into account the characteristics of growth AlGaN/GaN heterostructure were defined.

Normally Off GaN MOSFET Based on AlGaN/GaN Heterostructure With Extremely High 2DEG Density Grown on Silicon Substrate

2010 ◽  
Vol 31 (3) ◽  
pp. 192-194 ◽  
Author(s):  
Ki-Sik Im ◽  
Jong-Bong Ha ◽  
Ki-Won Kim ◽  
Jong-Sub Lee ◽  
Dong-Seok Kim ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
2Deg Density ◽  
Gan Heterostructure

scholarly journals Experimental Microwave Complex Conductivity Extraction of Vertically Aligned MWCNT Bundles for Microwave Subwavelength Antenna Design

Micromachines ◽  
2019 ◽  
Vol 10 (9) ◽  
pp. 566 ◽  
Author(s):  
Charlotte Tripon-Canseliet ◽  
Stephane Xavier ◽  
Yifeng Fu ◽  
Jean-Paul Martinaud ◽  
Afshin Ziaei ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Silicon Substrate ◽  
Electrical Impedance ◽  
Antenna Design ◽  
Complex Conductivity ◽  
Microwave Frequencies ◽  
Multi Wall Carbon Nanotubes ◽  
Capacitive Behavior ◽  
Resonance Shift ◽  
Vertically Aligned

This paper reports the extraction of electrical impedance at microwave frequencies of vertically aligned multi-wall carbon nanotubes (VA MWCNT) bundles/forests grown on a silicon substrate. Dedicated resonating devices were designed for antenna application, operating around 10 GHz and benefiting from natural inductive/capacitive behavior or complex conductivity in the microwave domain. As obtained from S-parameters measurements, the capacitive and inductive behaviors of VA MWCNT bundles were deduced from device frequency resonance shift.

Oxygen ion irradiation on AlGaN/GaN heterostructure grown on silicon substrate by MOCVD method

2015 ◽  
Author(s):  
R. Ramesh ◽  
P. Arivazhagan ◽  
M. Balaji ◽  
K. Asokan ◽  
K. Baskar
Keyword(s):  
Silicon Substrate ◽  
Ion Irradiation ◽  
Oxygen Ion ◽  
Gan Heterostructure

Formation of Ta/Ti/Al/Mo/Au ohmic contacts to an AlGaN/AlN/GaN heterostructure grown on a silicon substrate

2014 ◽  
Vol 48 (3) ◽  
pp. 387-391
Author(s):  
K. Yu. Osipov ◽  
L. E. Velikovskiy ◽  
V. A. Kagadei
Keyword(s):  
Silicon Substrate ◽  
Ohmic Contacts ◽  
Gan Heterostructure

Microwave resonance method for measuring microliter volumes of free moisture in aviation fuels

2020 ◽  
pp. 49-56
Author(s):  
Vitaly V. Volkov ◽  
Michael A. Suslin ◽  
Jamil U. Dumbolov
Keyword(s):  
Solid Surface ◽  
Free Water ◽  
Resonance Method ◽  
Cavity Resonator ◽  
Maximum Error ◽  
Aviation Fuel ◽  
Fuel Quality ◽  
Microwave Resonance ◽  
Free Moisture ◽  
Microwave Losses

One of the conditions for ensuring the safety of air transport operation is the quality of aviation fuel refueled in aircraft. Fuel quality control is a multi-parameter task that includes monitoring the free moisture content. Regulatory documents establish the content of free water no more than 0.0015% by weight. It is developed a direct electrometric microwave resonance method for controlling free moisture in aviation fuels, which consists in changing the shape of the water drops by pressing them on a solid surface inside a cylindrical cavity resonator. This can dramatically increase dielectric losses. Analytical and experimental analysis of the proposed method is carried out. The control range from 0,5 to 30 μl of absolute volume of moisture in aviation fuels with a maximum error of not morethan 25 % is justified. The sensitivity of the proposed method for monitoring microwave losses in free moisture drops transformed into a thin layer by pressing is an order of magnitude greater than the sensitivity of the method for monitoring microwave losses in moisture drops on a solid surface in a resonator. The proposed method can be used as a basis for the development of devices for monitoring the free moisture of aviation fuels in the conditions of the airfield and laboratory. The direction of development of the method is shown.

InGaAs/Si Heterojunction Tunneling Field-Effect Transistor on Silicon Substrate

2014 ◽  
Vol E97.C (7) ◽  
pp. 677-682
Author(s):  
Sung YUN WOO ◽  
Young JUN YOON ◽  
Jae HWA SEO ◽  
Gwan MIN YOO ◽  
Seongjae CHO ◽  
...  
Keyword(s):  
Silicon Substrate ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Transistor

Transport Properties Of Metallic Nanowires On Silicon Substrate

2014 ◽  
Vol 2 (1) ◽  
pp. 20-23
Author(s):  
Jaskiran Kaur ◽  
◽  
Surinder Singh ◽  
Keyword(s):  
Transport Properties ◽  
Silicon Substrate ◽  
Metallic Nanowires

Process Induced Defects in the Silicon Substrate: Approaches for Successful Failure Analysis

2010 ◽  
Author(s):  
J.G. van Hassel ◽  
Xiao-Mei Zhang
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Silicon Substrate ◽  
Processing Technique ◽  
Electrical Characteristics ◽  
Localization Method ◽  
The Right ◽  
Induced Defects

Abstract Failures induced in the silicon substrate by process marginalities or process mistakes need continuous attention in new as well as established technologies. Several case studies showing implant related defects and dislocations in silicon will be discussed. Depending on the electrical characteristics of the failure the localization method has to be chosen. The emphasis of the discussion will be on the importance of the right choice for further physical de-processing to reveal the defect. This paper focuses on the localization method, the de- processing technique and the use of Wright etch for subsequent TEM preparation.

Studies on a Novel Qualification Method of Silicon Nitride Layer

2016 ◽  
Author(s):  
Younan Hua ◽  
Bingsheng Khoo ◽  
Henry Leong ◽  
Yixin Chen ◽  
Eason Chan ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Silicon Substrate ◽  
Nitride Layer ◽  
Passivation Layer ◽  
Wafer Fabrication ◽  
Wafer Surface ◽  
Si3n4 Layer ◽  
Silicon Nitride Layer ◽  
Passivation Layers ◽  
Pinhole Test

Abstract In wafer fabrication, a silicon nitride (Si3N4) layer is widely used as passivation layer. To qualify the passivation layers, traditionally chemical recipe PAE (H3PO4+ HNO3) is used to conduct passivation pinhole test. However, it is very challenging for us to identify any pinholes in the Si3N4 layer with different layers underneath. For example, in this study, the wafer surface is Si3N4 layer and the underneath layer is silicon substrate. The traditional receipt of PAE cannot be used for passivation qualification. In this paper, we will report a new recipe using KOH solution to identify the pinhole in the Si3N4 passivation layer.

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