ADVANCED PROCESS OF DEEP ANISOTROPIC ETCHING OF SILICON WITH A HIGH ASPECT RATIO FOR THE FORMATION OF TSV STRUCTURES
2020 ◽
Keyword(s):
The aim of this work was to improve the existing technology of deep anisotropic etching of silicon for its application in the manufacture of three-dimensional TSV structures, namely, to increase the selectivity to the mask and reduce the surface roughness.
Keyword(s):
2006 ◽
Vol 83
(4-9)
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pp. 1740-1744
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2003 ◽
Vol 150
(6)
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pp. G355
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Keyword(s):
2011 ◽
Vol 115
(33)
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pp. 16258-16267
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Keyword(s):