Three dimensional interconnects with high aspect ratio TSVs and fine pitch solder microbumps

Silicon interposer minimizes CTE mismatch between the chip and copper filled TSV interposer resulting in high reliability micro bumps. Furthermore, providing high wiring density interconnections and improved electrical performance are the reasons TSV interposer has emerged as a good solution and getting significant industry attention. High density three dimensional (3D) interconnects formed by high aspect ratio through silicon via (TSV) and fine pitch solder micro bumps are presented in this paper. Different design/material related factors are evaluated during this study in order to yield high aspect ratio void-free TSV copper via and reliable micro-bumps. Quality and reliability of copper TSV and micro-bumps are monitored in-situ during the process. This paper presents some of the quality and reliability results as well as micro-bump and TSV resistance data. Furthermore, bake and thermal-cycling measurements are presented to insure reliability of the design and the material selected for the 28nm technology TSV interposer FPGA.

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A Fine Pitch And High Aspect Ratio Bump Array For Flip-chip Interconnection

Thirteenth IEEE/CHMT International Electronics Manufacturing Technology Symposium ◽

10.1109/iemt.1992.639906 ◽

2005 ◽

Cited By ~ 4

Author(s):

H. Yamada ◽

Y. Konooh ◽

M. Saito

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

Flip Chip ◽

Fine Pitch

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Accelerating ion diffusion with unique three-dimensionally interconnected nanopores for self-membrane high-performance pseudocapacitors

Nanoscale ◽

10.1039/c7nr06234f ◽

2017 ◽

Vol 9 (46) ◽

pp. 18311-18317 ◽

Cited By ~ 5

Author(s):

Yuan Gao ◽

Yuanjing Lin ◽

Zehua Peng ◽

Qingfeng Zhou ◽

Zhiyong Fan

Keyword(s):

Aspect Ratio ◽

Surface Area ◽

Structural Stability ◽

High Aspect Ratio ◽

High Performance ◽

Three Dimensional ◽

Rate Capability ◽

Large Surface Area ◽

Nanoporous Structure ◽

Ion Diffusion

Three-dimensional interconnected nanoporous structure (3-D INPOS) possesses high aspect ratio, large surface area, as well as good structural stability. Profiting from its unique interconnected architecture, the 3-D INPOS pseudocapacitor achieves a largely enhanced capacitance and rate capability.

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Self-ordered nanospike porous alumina fabricated under a new regime by an anodizing process in alkaline media

Scientific Reports ◽

10.1038/s41598-021-86696-z ◽

2021 ◽

Vol 11 (1) ◽

Author(s):

Mana Iwai ◽

Tatsuya Kikuchi ◽

Ryosuke O. Suzuki

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

Porous Alumina ◽

Three Dimensional ◽

Alkaline Media ◽

Alkaline Electrolyte ◽

Subsequent Formation ◽

Interpore Distance ◽

Wide Range ◽

Ordered Porous

AbstractHigh-aspect ratio ordered nanomaterial arrays exhibit several unique physicochemical and optical properties. Porous anodic aluminum oxide (AAO) is one of the most typical ordered porous structures and can be easily fabricated by applying an electrochemical anodizing process to Al. However, the dimensional and structural controllability of conventional porous AAOs is limited to a narrow range because there are only a few electrolytes that work in this process. Here, we provide a novel anodizing method using an alkaline electrolyte, sodium tetraborate (Na2B4O7), for the fabrication of a high-aspect ratio, self-ordered nanospike porous AAO structure. This self-ordered porous AAO structure possesses a wide range of the interpore distance under a new anodizing regime, and highly ordered porous AAO structures can be fabricated using pre-nanotexturing of Al. The vertical pore walls of porous AAOs have unique nanospikes measuring several tens of nanometers in periodicity, and we demonstrate that AAO can be used as a template for the fabrication of nanomaterials with a large surface area. We also reveal that stable anodizing without the occurrence of oxide burning and the subsequent formation of uniform self-ordered AAO structures can be achieved on complicated three-dimensional substrates.

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High-aspect-ratio structure formation techniques for three-dimensional metal-oxide-semiconductor transistors

Microelectronic Engineering ◽

10.1016/j.mee.2006.01.270 ◽

2006 ◽

Vol 83 (4-9) ◽

pp. 1740-1744 ◽

Cited By ~ 1

Author(s):

Hideo Sunami ◽

Shunpei Matsumura ◽

Koji Yoshikawa ◽

Kiyoshi Okuyama

Keyword(s):

Aspect Ratio ◽

Metal Oxide ◽

Structure Formation ◽

High Aspect Ratio ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Aspect Ratio Structure

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High-Aspect-Ratio Copper Via Filling Used for Three-Dimensional Chip Stacking

Journal of The Electrochemical Society ◽

10.1149/1.1572154 ◽

2003 ◽

Vol 150 (6) ◽

pp. G355 ◽

Cited By ~ 111

Author(s):

Jian-Jun Sun ◽

Kazuo Kondo ◽

Takuji Okamura ◽

SeungJin Oh ◽

Manabu Tomisaka ◽

...

Keyword(s):

Aspect Ratio ◽

High Aspect Ratio ◽

Three Dimensional

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Strong and Reversible Adhesion of Interlocked 3D-Microarchitectures

Coatings ◽

10.3390/coatings9010048 ◽

2019 ◽

Vol 9 (1) ◽

pp. 48 ◽

Cited By ~ 1

Author(s):

Minho Seong ◽

Hyun-Ha Park ◽

Insol Hwang ◽

Hoon Eui Jeong

Keyword(s):

Aspect Ratio ◽

Structural Stability ◽

High Aspect Ratio ◽

Three Dimensional ◽

Normal Direction ◽

One Dimensional ◽

Reversible Adhesion ◽

Adhesion Behavior ◽

Organic Nanomaterials ◽

Good Agreement

Diverse physical interlocking devices have recently been developed based on one-dimensional (1D), high-aspect-ratio inorganic and organic nanomaterials. Although these 1D nanomaterial-based interlocking devices can provide reliable and repeatable shear adhesion, their adhesion in the normal direction is typically very weak. In addition, the high-aspect-ratio, slender structures are mechanically less durable. In this study, we demonstrate a highly flexible and robust interlocking system that exhibits strong and reversible adhesion based on physical interlocking between three-dimensional (3D) microscale architectures. The 3D microstructures have protruding tips on their cylindrical stems, which enable tight mechanical binding between the microstructures. Based on the unique 3D architectures, the interlocking adhesives exhibit remarkable adhesion strengths in both the normal and shear directions. In addition, their adhesion is highly reversible due to the robust mechanical and structural stability of the microstructures. An analytical model is proposed to explain the measured adhesion behavior, which is in good agreement with the experimental results.

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