COPPER OXIDE THIN FILM SYNTHESIS, CHARACTERIZATION AND APPLICATION AS CATHODE IN PHOTOELECTROCATALYTIC CELL FOR METHYL ORANGE DEGRADATION

A copper oxide thin film was synthesized through a copper sheet annealing process that was carried out using a gas stove, furnace and 1000 W tungsten . The product and its response were measured using a and then characterized by XRD, SEM and EDX. Furthermore, the copper oxide was applied as a photocathode in a cell with Platinum (Pt) as the anode for methyl orange degradation, and the thin film annealed at 60 sec produced the highest current density. According to XRD and EDX results, copper oxide structure was dominated by Cu2O, while SEM showed the presence of a Cu2O porous surface. Methyl orange solution degradation also showed the best result for the copper oxide annealed at 60 sec and in all pH variations, while the best degradation was obtained at pH 1.

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Photoelectrocatalytic improvement of copper oxide thin film fabricated using anodization strategy application in nitrite degradation and promoting oxygen evolution

Chemical Papers ◽

10.1007/s11696-020-01369-x ◽

2020 ◽

Author(s):

Chatchai Ponchio ◽

Wanasiri Srevarit

Keyword(s):

Thin Film ◽

Copper Oxide ◽

Oxygen Evolution ◽

Oxide Thin Film ◽

Copper Oxide Thin Film

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Spectroscopic Studies of Magnetron Sputtering Plasma Discharge in Cu/O2/Ar Mixture for Copper Oxide Thin Film Fabrication

Jurnal Teknologi ◽

10.11113/jt.v73.2984 ◽

2015 ◽

Vol 73 (1) ◽

Cited By ~ 1

Author(s):

Jia Wei Low ◽

Nafarizal Nayan ◽

Mohd Zainizan Sahdan ◽

Mohd Khairul Ahmad ◽

Ali Yeon Md Shakaff ◽

...

Keyword(s):

Thin Film ◽

Copper Oxide ◽

Flow Rate ◽

Langmuir Probe ◽

Oxygen Flow Rate ◽

Oxygen Flow ◽

Oxide Thin Film ◽

Substrate Bias ◽

Substrate Bias Voltage ◽

Copper Oxide Thin Film

Magnetron sputtering plasma for the deposition of copper oxide thin film has been investigated using optical emission spectroscopy and Langmuir probe. The intensity of the light emission from atoms and radicals in the plasma were measured using optical emission spectroscopy (OES). Then, Langmuir probe was employed to estimate the plasma density, electron temperature and ion flux. In present studies, reactive copper sputtering plasmas were produced at different oxygen flow rate of 0, 4, 8 and 16 sccm. The size of copper target was 3 inches. The dissipation rf power, Ar flow rate and working pressure were fixed at 400 W, 50 sccm and 22.5 mTorr, respectively. Since the substrate bias plays an important role to the thin film formation, the substrate bias voltages of 0, -40, -60 and -100 V were studied. Based on OES results, oxygen emission increased drastically when the oxygen flow rate above 8 sccm. On the other hand, copper and argon emission decreased gradually. In addition, Langmuir probe results showed a different ion flux when substrate bias voltage was applied. Based on these plasma diagnostic results, it has been concluded that the optimized parameter to produce copper oxide thin film are between -40 to -60 V of substrate bias voltage and between 8 to 12 sccm of oxygen flow rate.

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