scholarly journals GA-PSO Integration Algorithm and Its Application in Modeling on Furnace Pressure System

Author(s):  
Qiming Chen
Author(s):  
A.C.T. Quah ◽  
J.C.H. Phang ◽  
L.S. Koh ◽  
S.H. Tan ◽  
C.M. Chua

Abstract This paper describes a pulsed laser induced digital signal integration algorithm for pulsed laser operation that is compatible with existing ac-coupled and dc-coupled detection systems for fault localization. This algorithm enhances laser induced detection sensitivity without a lock-in amplifier. The best detection sensitivity is achieved at a pulsing frequency range between 500 Hz to 1.5 kHz. Within this frequency range, the algorithm is capable of achieving more than 9 times enhancement in detection sensitivity.


Author(s):  
J. Zimmer ◽  
D. Nielsen ◽  
T.A. Anderson ◽  
M. Schade ◽  
N. Saha ◽  
...  

Abstract The p-n junction of a GaAs light emitting diode is fabricated using liquid phase epitaxy (LPE). The junction is grown on a Si doped (~1018/cm3) GaAs substrate. Intermittent yield loss due to forward voltage snapback was observed. Historically, out of specification forward voltage (Vf) parameters have been correlated to abnormalities in the junction formation. Scanning electron (SEM) and optical microscopy of cleaved and stained samples revealed a continuous layer of material approximately 2.5 to 3.0 urn thick at the n-epi/substrate interface. Characterization of a defective wafer via secondary ion mass spectroscopy (SIMS) revealed an elevated concentration of O throughout the region containing the defect. X-ray Photoelectron Spectroscopy (XPS) and Auger Electron Spectroscopy (AES) data taken from a wafer prior to growth of the epi layers did not reveal any unusual oxidation or contamination. Extensive review of the processing data suggested LPE furnace pressure was the obvious source of variability. Processing wafers through the LPE furnace with a slight positive H2 gas pressure has greatly reduced the occurrence of this defect.


2019 ◽  
Vol 104 (12) ◽  
pp. 1800-1805
Author(s):  
George M. Amulele ◽  
Anthony W. Lanati ◽  
Simon M. Clark

Abstract Starting with the same sample, the electrical conductivities of quartz and coesite have been measured at pressures of 1, 6, and 8.7 GPa, respectively, over a temperature range of 373–1273 K in a multi-anvil high-pressure system. Results indicate that the electrical conductivity in quartz increases with pressure as well as when the phase change from quartz to coesite occurs, while the activation enthalpy decreases with increasing pressure. Activation enthalpies of 0.89, 0.56, and 0.46 eV, were determined at 1, 6, and 8.7 GPa, respectively, giving an activation volume of –0.052 ± 0.006 cm3/mol. FTIR and composition analysis indicate that the electrical conductivities in silica polymorphs is controlled by substitution of silicon by aluminum with hydrogen charge compensation. Comparing with electrical conductivity measurements in stishovite, reported by Yoshino et al. (2014), our results fall within the aluminum and water content extremes measured in stishovite at 12 GPa. The resulting electrical conductivity model is mapped over the magnetotelluric profile obtained through the tectonically stable Northern Australian Craton. Given their relative abundances, these results imply potentially high electrical conductivities in the crust and mantle from contributions of silica polymorphs. The main results of this paper are as follows:The electrical conductivity of silica polymorphs is determined by impedance spectroscopy up to 8.7 GPa.The activation enthalpy decreases with increasing pressure indicating a negative activation volume across the silica polymorphs.The electrical conductivity results are consistent with measurements observed in stishovite at 12 GPa.


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