scholarly journals Optical properties of ZnO/MgF2 bilayer thin films prepared by PVD technique

2018 ◽  
Vol 16 (38) ◽  
pp. 76-82
Author(s):  
Malek A.H. Muhi
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Optical Measurements ◽  
Window Layer ◽  
Cell Window ◽  
Thermal Evaporation Deposition

Zinc Oxide (ZnO) is considered as one of the best materials already used as a window layer in solar cells due to its antireflective capability. The ZnO/MgF2 bilayer thin film is more efficient as antireflective coating. In this work, ZnO and ZnO/MgF2 thin films were deposited on glass substrate using pulsed laser deposition and thermal evaporation deposition methods. The optical measurements indicated that ZnO thin layer has an energy gap of (3.02 eV) while ZnO/MgF2 bilayer gives rise to an increase in the energy gap. ZnO/MgF2 bilayer shows a high energy gap (3.77 eV) with low reflectance (1.1-10 %) and refractive index (1.9) leading to high transmittance, this bilayer could be a good candidate optical material to improve the performance of solar cell window.

scholarly journals Effect of Pb percentage on optical parameters of PbxCd1-xSe thin films

2019 ◽  
Vol 14 (29) ◽  
pp. 1-7
Author(s):  
Farah Q. Kamil
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Energy Gap ◽  
Optical Measurements ◽  
Optical Parameters ◽  
Optical Energy Gap ◽  
Optical Energy ◽  
Glass Substrates

PbxCd1-xSe compound with different Pb percentage (i.e. X=0,0.025, 0.050, 0.075, and 0.1) were prepared successfully. Thin filmswere deposited by thermal evaporation on glass substrates at filmthickness (126) nm. The optical measurements indicated thatPbxCd1-xSe films have direct optical energy gap. The value of theenergy gap decreases with the increase of Pb content from 1.78 eV to1.49 eV.

Fabrication of Ni–Al thin films by the pulsed laser deposition technique

1992 ◽  
Vol 7 (10) ◽  
pp. 2639-2642 ◽  
Author(s):  
R.K. Singh ◽  
Deepika Bhattacharya ◽  
S. Sharan ◽  
P. Tiwari ◽  
J. Narayan
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
Nanosecond Laser ◽  
X Ray ◽  
Target Composition

We have fabricated Ni3Al and NiAl thin films on different substrates by the pulsed laser deposition (PLD) technique. A high energy nanosecond laser beam was directed onto Ni–Al (NiAl, Ni3Al) targets, and the evaporated material was deposited onto substrates placed parallel to the target. The substrate temperature was varied between 300 and 400 °C, and the substrate-target distance was maintained at approximately 5 cm. The films were analyzed using scanning electron microscopy, transmission electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. At energy densities slightly above the evaporation threshold, a slight enrichment of Al was observed, while at higher energy densities the film stoichiometry was close (<5%) to the target composition. Barring a few particles, the surface of the films exhibited a smooth morphology. X-ray and TEM results corroborated the formation of Ni3Al and NiAl films from similar target compositions. These films were characterized by small randomly oriented grains with grain size varying between 200 and 400 Å.

Pulsed Laser Deposition of High-Quality Manganite Thin Films at Low Background Pressures with in-situ Reflection High Energy Electron Diffraction

2019 ◽  
Vol 3 (9) ◽  
pp. 55-63 ◽  
Author(s):  
Antonello Tebano ◽  
Carmela Aruta ◽  
Pier Gianni Medaglia ◽  
Giuseppe Balestrino ◽  
Norberto G. Boggio ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
High Energy ◽  
Laser Deposition ◽  
High Energy Electron ◽  
High Quality ◽  
Low Background

Influence of Post Growth Annealing on the Optical Properties of Gallium Nitride Films Grown by Pulsed Laser Deposition

2012 ◽  
Vol 1432 ◽  
Author(s):  
M. Baseer Haider ◽  
M. F. Al-Kuhaili ◽  
S. M. A. Durrani ◽  
Imran Bakhtiari
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Nitrogen Atmosphere ◽  
Laser Deposition ◽  
Optical Measurements ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

Abstract:Gallium nitride thin films were grown by pulsed laser deposition. Subsequently, post-growth annealing of the samples was performed at 400, and 600 oC in the nitrogen atmosphere. Surface morphology of the as-grown and annealed samples was performed by atomic force microscopy, surface roughness of the films improved after annealing. Chemical analysis of the samples was performed using x-ray photon spectroscopy, stoichiometric Gallium nitride thin films were obtained for the samples annealed at 600 oC. Optical measurements of the samples were performed to investigate the effect of annealing on the band gap and optical constants the films.

Microstructural, nanomechanical, and microtribological properties of Pb thin films prepared by pulsed laser deposition and thermal evaporation techniques

2016 ◽  
Vol 34 (2) ◽  
pp. 021505 ◽  
Author(s):  
Esteban Broitman ◽  
Francisco J. Flores-Ruiz ◽  
Massimo Di Giulio ◽  
Francisco Gontad ◽  
Antonella Lorusso ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Laser Deposition

Preparation of Bi:TiO2 thin films by an hybrid deposition configuration: pulsed laser deposition and thermal evaporation

2014 ◽  
Vol 117 (1) ◽  
pp. 31-35 ◽  
Author(s):  
L. Escobar-Alarcón ◽  
D. A. Solís-Casados ◽  
J. Perez-Alvarez ◽  
S. Romero ◽  
J. G. Morales-Mendez ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Thermal Evaporation ◽  
Pulsed Laser ◽  
Laser Deposition

Structure and Optical Properties of SrBi2Nb2O9 Thin Films Fabricated by Pulsed Laser Deposition

2008 ◽  
Vol 368-372 ◽  
pp. 305-307
Author(s):  
Kan Song Chen ◽  
Hao Shuang Gu ◽  
Jian San Zou ◽  
Li Wang ◽  
Yi Huang
Keyword(s):  
Thin Films ◽  
Surface Morphology ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Energy Gap ◽  
Perovskite Phase ◽  
Pulsed Laser ◽  
Optical Transmittance ◽  
Laser Deposition ◽  
Layered Perovskite

SrBi2Nb2O9 (SBN) thin films were prepared on fused quartz substrates at room temperature by pulsed laser deposition. The crystallization behavior and surface morphology were studied at various oxygen pressures by XRD and AFM. The results indicated that the films had polycrystalline structure with a single layered perovskite phase, and exhibited higher crystalline quality, less rough surface morphology, and larger grain size with increasing oxygen pressure. The optical transmittance of the samples was measured in the wavelength range 200-900 nm, and the dispersion relation of refractive indices and wavelength was found to follow the single electron oscillation model. The energy gap of SBN films grown at oxygen pressure of 5 Pa was estimated to be around 3.88 eV by assuming a direct transition between valence and conduction bands.

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