scholarly journals Ultrafast Broadband Nonlinear Optical Response in Co-Doped Sb2Se3 Nanofilms at Near-Infrared

2021 ◽  
Vol 8 ◽  
Author(s):  
Di Sun ◽  
Yu Fang ◽  
Xiaoyan Yan ◽  
Wen Shan ◽  
Wenjun Sun ◽  
...  

Transition metal-doped Sb2Se3 has become a heated topic caused by the strong nonlinear optical response and the ultrafast response time at high laser excitation. In this paper, the Co-doped Sb2Se3 with different doping amount (0.5, 1.0, and 1.5 W) nanofilms were prepared by magnetron sputtering technology, and the nonlinear behavior of Co-doped Sb2Se3 nanofilms at near infrared were systematically studied. The results of the femtosecond Z-Scan experiment indicate that the Co-doped Sb2Se3 nanofilms exhibit broadband nonlinear response properties owing to the free carrier absorption, the Kerr refraction, the two-photon absorption, and the free carrier refraction. The nonlinear absorption coefficients of Co-doped Sb2Se3 nanofilms are from 3.0 × 10−9 to 2.03 × 10−8 m/ W under excitation at 800, 980, and 1,030 nm, and the nonlinear refractive index of the Co-doped Sb2Se3 nanofilms is from 4.0 × 10−16 to -3.89 × 10−15 m2/ W at 800, 980, and 1,030 nm. More importantly, Co-doped Sb2Se3 (1.5 W) nanofilm exhibits ultrafast carrier absorption (<1 ps) and a stronger transient absorption intensity of ΔOD > 6.3. The Co-doping content can controllably tune the crystalline degree, the ultrafast carrier absorption, the intensity of the reverse saturation absorption, the broadband nonlinear optical response, and the carrier relaxation time of Co-doped Sb2Se3 nanofilms. These results are sufficient to support their applications in broadband nonlinear photonic devices.

2011 ◽  
Vol 20 (03) ◽  
pp. 357-366 ◽  
Author(s):  
SANTHAD PITAKWONGSAPORN ◽  
SURASAK CHIANGGA

We theoretically examine the Fano lineshapes of silicon-based compound microring resonators consisting of a single resonator channel dropping filter linked to a loop as a feedback structure. All possible optical effects for the continuous-wave operating regime, such as linear absorption or scattering, two-photon absorption, free-carrier absorption and dispersion, thermo-optics, are simultaneously considered. We show that sharp Fano resonances can be tuned by variation in the coupling coefficients, length of feedback loop, effective free carrier lifetime and the temperature inside the device. Tunable Fano lineshapes open up opportunities for applications in sensing, computing, and communications.


2013 ◽  
Vol 102 (24) ◽  
pp. 243702 ◽  
Author(s):  
B. Cichy ◽  
D. Wawrzynczyk ◽  
A. Bednarkiewicz ◽  
M. Samoc ◽  
W. Strek

1997 ◽  
Vol 484 ◽  
Author(s):  
A. O. U. Perera ◽  
W. Z. Shen ◽  
M. O. Tanner ◽  
K. L. Wang ◽  
W. Schaff

AbstractWe report the investigation of free-carrier absorption characteristics for epitaxially grown p-type thin films in the far-infrared region (50 ∼ 200 μm), where homojunction interfacial workfunction internal photoemission (HIWIP) detectors are employed. Five Si and three GaAs thin films were grown by MBE over a range of carrier concentrations, and the experimental absorption data were compared with calculated results. The freehole absorption is found to be almost independent of the wavelength. A linear regression relationship between the absorption coefficient and the carrier concentration, in agreement with theory, has been obtained and employed to calculate the photon absorption probability in HIWIP detectors. The detector responsivity follows the quantum efficiency predicted by concentration dependence of the free carrier absorption coefficient.


2008 ◽  
Vol 07 (04) ◽  
pp. 737-749 ◽  
Author(s):  
HUI HU ◽  
WEN-DAN CHENG ◽  
SHU-PING HUANG ◽  
ZHI XIE ◽  
HAO ZHANG

The linear absorption spectra and third-order nonlinear optical properties of M@ C 82 (M = Sc , Y , La ) nanostructural materials, whose configurations were optimized at the unrestricted open shell UB3LYP level, are simulated by the sum-over-states combined with the time-dependent UB3LYP methods. The obtained results show that the electronic absorption bands have redshifts, and the values of third-order nonlinear optical polarizabilities and two-photon absorption cross sections increase for M@ C 82 fullerenes (M = Sc , Y , La ) as the atomic radius of encased metal M increase in the order of Sc → Y → La . It is indicated that the electron-donating ability from the encased M atom to cage C 82 decreases or the electron-accepting ability from C 82 to M atom increases as the atomic radius of M increases, which results in third-order nonlinear optical response enhancement in the order of Sc @ C 82 < Y @ C 82 < La @ C 82. This gives a clue to design the nanostructural materials of encased fullerenes having a large nonlinear optical response.


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