In the field of scintillators, high scintillation and light production performance require high-quality crystals. Although the composition and structure of crystals are fundamental in this direction, their ultimate optical performance is strongly dependent on the surface finishing treatment. This paper compares two surface finishing methods in terms of the final structural condition of the surface and the relative light yield performances. The first polishing method is the conventional “Mechanical Diamond Polishing” (MDP) technique. The second polishing technique is a method applied in the electronics industry which is envisaged for finishing the surface treatment of scintillator crystals. This method, named “Chemical Mechanical Polishing” (CMP), is efficient in terms of the cost and material removal rate and is expected to produce low perturbed surface layers, with a possible improvement of the internal reflectivity and, in turn, the light collection efficiency. The two methods have been applied to a lead tungstate PbWO4 (PWO) single crystal due to the wide diffusion of this material in high energy physics (CERN, PANDA project) and diagnostic medical applications. The light yield (LY) values of both the MDP and CMP treated crystals were measured by using the facilities at CERN while their surface structure was investigated by Scanning Electron Microscopy (SEM) and Grazing Incidence X-ray Diffraction (GID). We present here the corresponding optical results and their relationship with the processing conditions and subsurface structure.
Simulations of light collection in long tapered CsI(Tl) scintillators using real crystal surface data and comparisons to measurement
