scholarly journals Study of damage profiles and energy calculation of arsenic ions during ion implantation on Germanium

BIBECHANA ◽  
2020 ◽  
Vol 17 ◽  
pp. 96-103
Author(s):  
K Giri ◽  
K Kandel
Keyword(s):  
Ion Implantation ◽  
Energy Loss ◽  
Incident Energy ◽  
Surface Hardness ◽  
Energy Calculation ◽  
Target Displacement ◽  
Collision Process ◽  
Nuclear Stopping ◽  
Loss And Damage ◽  
Computational Calculation

Computational calculation of energy loss and damage profiles when implanted by arsenic ions on amorphous germanium during ion implantation had been carried out. The required energies for doping of arsenic ion on germanium, in order to obtain maximum damage at 600 Å, were calculated using SRIM. These ions when implanted on germanium causes the production of germanium recoils, vacancy-interstitial pairs, and phonons during the collision process. For 140 keV arsenic ion, the energy consumption for ionization, phonon production and vacancies creation are 39.634 keV (28.31% of incident energy), 90.888 keV (64.92% of incident energy) and 9.478 keV (6.77% of incident energy), respectively. The amount of target displacement, replacement collisions and vacancies were also evaluated. Doping of arsenic ions on germanium also revealed that the energy loss due to nuclear stopping was greater than electronic stopping. Significantly, surface hardness and electrical conductivity on germanium cannot be improved with calculated energies. BIBECHANA 17 (2020) 96-103

scholarly journals Computational Study of Damage Profiles and Energy Loss of Gallium Ion in Germanium Substrate

2020 ◽  
Vol 6 (1) ◽  
pp. 117-122
Author(s):  
K. Giri ◽  
A. Bhandari
Keyword(s):  
Energy Loss ◽  
Incident Energy ◽  
Computational Study ◽  
Target Displacement ◽  
Collision Process ◽  
Nuclear Stopping ◽  
Germanium Substrate ◽  
Ionic Implantation ◽  
Computational Calculation

Computational calculation of energy loss and study of damage profiles during ionic implantation by gallium ions on germanium had been carried out. The required energies for doping of gallium ion on germanium, in order to obtain maximum damage at 600 Å, were calculated using SRIM; Stopping and Range of Ions in Matter. The ions when implanted independently on germanium causes the production of germanium recoils, vacancy-interstitial pairs, and phonons during the collision process. For 130 keV gallium ion, the energy used for ionization, phonon production and vacancies creation are 37.713 keV (29.01% of incident energy), 90.006 keV (64.29% of incident energy) and 8.71 keV (6.7% of incident energy) respectively. The amount of target displacement, replacement collisions and vacancies were also evaluated. Doping of gallium ions on germanium also reveals that the energy loss due to nuclear stopping was greater than electronic stopping.

scholarly journals Strain/Damage in Crystalline Materials Bombarded by MeV Ions: Recrystallization of GaAs by High-Dose Irradiation

1984 ◽  
Vol 35 ◽  
Author(s):  
C. R. Wie ◽  
T. Vreeland ◽  
T. A. Tombrello
Keyword(s):  
Surface Layer ◽  
Energy Loss ◽  
Ion Irradiation ◽  
Stopping Power ◽  
High Dose ◽  
Double Crystal ◽  
Saturation Phenomenon ◽  
Nuclear Stopping ◽  
X Ray ◽  
Dose Irradiation

ABSTRACTMeV ion irradiation effects on semiconductor crystals, GaAs(100) and Si (111) and on an insulating crystal CaF2 (111) have been studied by the x-ray rocking curve technique using a double crystal x-ray diffractometer. The results on GaAs are particularly interesting. The strain developed by ion irradiation in the surface layers of GaAs (100) saturates to a certain level after a high dose irradiation (typically 1015/cm2), resulting in a uniform lattice spacing about 0.4% larger than the original spacing of the lattice planes parallel to the surface. The layer of uniform strain corresponds in depth to the region where electronic energy loss is dominant over nuclear collision energy loss. The saturated strain level is the same for both p-type and n-type GaAs. In the early stages of irradiation, the strain induced in the surface is shown to be proportional to the nuclear stopping power at the surface and is independent of electronic stopping power. The strain saturation phenomenon in GaAs is discussed in terms of point defect saturation in the surface layer.An isochronal (15 min.) annealing was done on the Cr-doped GaAs at temperatures between 200° C and 700° C. The intensity in the diffraction peak from the surface strained layer jumps at 200° C < T ≤ 300° C. The strain decreases gradually with temperature, approaching zero at T ≤ 500° C.The strain saturation phenomenon does not occur in the irradiated Si. The strain induced in Si is generally very low (less than 0.06%) and is interpreted to be mostly in the layers adjacent to the maximum nuclear stopping region, with zero strain in the surface layer. The data on CaF2 have been analysed with a kinematical x-ray diffraction theory to get quantitative strain and damage depth profiles for several different doses.

Collision site effect on the radiation dynamics of cytosine induced by proton

2022 ◽  
Author(s):  
Xu Wang ◽  
Zhi-Ping Wang ◽  
Feng-Shou Zhang ◽  
Chao-Yi Qian
Keyword(s):  
Energy Loss ◽  
Incident Energy ◽  
Density Functional ◽  
Degrees Of Freedom ◽  
Site Effect ◽  
Low Energy ◽  
Microscopic Mechanism ◽  
Scattering Angle ◽  
Fragment Mass ◽  
Dynamics Simulations

Abstract By combing the time-dependent density functional calculations for electrons with molecular dynamics simulations for ions (TDDFT-MD) nonadiabatically in real time, we investigate the microscopic mechanism of collisions between cytosine and low-energy protons with incident energy ranging from 150 eV to 1000 eV. To explore the effects of the collision site and the proton incident energy on irradiation processes of cytosine, two collision sites are specially considered, which are N and O both acting as the proton receptors when forming hydrogen bonds with guanine. Not only the energy loss and the scattering angle of the projectile, but also the electronic and ionic degrees of freedom of the target are identified. It is found that the energy loss of proton increases linearly with the increase of the incident energy in both situations, which are 14.2% and 21.1% of the incident energy respectively. However, the scattering angles show different behaviors in these two situations when the incident kinetic energy increases. When proton collides with O, the scattering angle of proton is larger and the energy lost is more, while proton captures less electrons from O. The calculated fragment mass distribution shows the high counts of the fragment mass of 1, implying the production of H+ fragment ion from cytosine even for proton with the incident energy lower than keV. Furthermore, the calculated results show that N on cytosine is easier to be combined with low-energy protons to form NH bonds than O.

Modification of surface hardness of alumina by ion implantation

1994 ◽  
pp. 511-514
Author(s):  
M. Ikeyama ◽  
K. Saitoh ◽  
A. Chayahara ◽  
T. Tanaka ◽  
N. Tamari ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Surface Hardness

NANOMECHANICAL AND CORROSION PROPERTIES OF ZK60 MAGNESIUM ALLOY IMPROVED BY GD ION IMPLANTATION

2014 ◽  
Vol 21 (06) ◽  
pp. 1450085 ◽  
Author(s):  
XUE WEI TAO ◽  
ZHANG ZHONG WANG ◽  
XIAO BO ZHANG ◽  
ZHI XIN BA ◽  
YA MEI WANG
Keyword(s):  
Magnesium Alloy ◽  
Ion Implantation ◽  
Photoelectron Spectroscopy ◽  
Surface Hardness ◽  
Protective Layer ◽  
Hybrid Structure ◽  
Nacl Solution ◽  
Corrosion Properties ◽  
X Ray ◽  
Zk60 Magnesium Alloy

Gadolinium ( Gd ) ion implantation with doses from 2.5 × 1016 to 1 × 1017 ions/cm2 into ZK60 magnesium alloy was carried out to improve its surface properties. X-ray photoelectron spectroscopy (XPS), nanoindenter, electrochemical workstation and scanning electron microscope (SEM) were applied to analyze the chemical composition, nanomechanical properties and corrosion characteristics of the implanted layer. The results indicate that Gd ion implantation produces a hybrid-structure protective layer composed of MgO , Gd 2 O 3 and metallic Gd in ZK60 magnesium alloy. The surface hardness and modulus of the Gd implanted magnesium alloy are improved by about 300% and 100%, respectively with the dose of 1 × 1017 ions/cm2, while the slowest corrosion rate of the magnesium alloy in 3.5 wt.% NaCl solution is obtained with the dose of 5 × 1016 ions/cm2.

Comparison of Commercially Pure Titanium Surface Hardness Improvement by Plasma Nitrocarburizing and Ion Implantation

2013 ◽  
Vol 789 ◽  
pp. 347-351 ◽  
Author(s):  
Agung Setyo Darmawan ◽  
Waluyo Adi Siswanto ◽  
Tjipto Sujitno
Keyword(s):  
Ion Implantation ◽  
Elevated Temperatures ◽  
Pure Titanium ◽  
Surface Hardness ◽  
Commercially Pure Titanium ◽  
Hardness Tester ◽  
Hardness Number ◽  
Commercially Pure ◽  
Hardness Tests ◽  
Plasma Nitrocarburizing

Commercially pure (cp) titanium has a relative soft hardness property. In particular usage such as sliding, the improvement of the surface hardness will be required. In this study, surface hardness improvement of cp titanium by Plasma Nitrocarburizing and Ion Implantation are compared. Plasma Nitrocarburizing processes are conducted at different elevated temperatures with different duration processes, i.e. at 350 °C for 3, 4, and 5 hours, and at 450 °C for 2, 3, and 4 hours respectively, while Ion Implantation processes are conducted at room temperature and process durations are varied as 2.3 hours, 4.7 hours, and 9.3 hours. Nitrogen ions are used to implant the material. Hardness tests are then performed on each specimen by using Micro Vickers Hardness Tester. The surface hardness number (HV) for specimens of the Plasma Nitrocarburizing processes at temperature of 350 °C for process duration of 3 hours, 4 hours, and 5 hours are 74.16, 92.25 and 94.41, respectively while those at temperature of 450 °C for duration process of 2 hours, 3 hours, and 4 hours are 103.70, 121.31 and 126.17, respectively. The processes of Ion Implantation produce the surface hardness number (HV) of 88.97, 125.51, and 130.2, for duration processes of 2.3 hours, 4.7 hours, and 9.3 hours. The process of Ion Implantation produce higher surface hardness number than the Plasma Nitrocarburizing process at temperature 350 °C but the surface hardness number is lower when compared to the Plasma Nitrocarburizing at a temperature of 450 °C. For the duration processes 4 hours and more, the process of Ion Implantation produces the same surface hardness number with the Plasma Nitrocarburizing at temperature of 450 °C.

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