scholarly journals Designing and setting up the scintillationdetector using CsI(Tl) crystals and avalanche photodiode for gamma-ray measurement

2021 ◽  
Vol 63 (3) ◽  
pp. 46-49
Author(s):  
Dinh Khang Pham ◽  
◽  
Tien Hung Dinh ◽  
Kim Chien Dinh ◽  
Van Hiep Cao ◽  
...  
Keyword(s):  
Power Supply ◽  
Power Supply System ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Avalanche Photodiode ◽  
High Voltage Power Supply ◽  
Wide Range ◽  
High Detection Efficiency ◽  
User Friendly ◽  
Charge Sensitive Preamplifier

Localization of the scintillation detectors manufacturing process has many benefits because of the high detection efficiency of the detectors, user-friendly, and consistent with general research objectives. Using a photodiode instead of a photomultiplier tube (PMT) allows saving energy, shortening the detector volume, and removing high voltage power supply and amplifier. The combination of CsI(Tl) scintillator, avalanche photodiode, charge sensitive preamplifier, wide range amplifier, and power supply system has been integrated into the detector. This study presents new results in manufacturing a home-made scintillation detector using avalanche photodiode. The detectors of this type can be used in hospitals, in the nuclear laboratory of universities for the students training, etc.

Design of Electrostatic Precipitator Power System Based on Auto Disturbance Rejection Controller

2013 ◽  
Vol 846-847 ◽  
pp. 190-194
Author(s):  
Shu Jun Yin ◽  
Xue Ren Li ◽  
Ji Geng Luo
Keyword(s):  
Power Supply ◽  
Disturbance Rejection ◽  
Power Supply System ◽  
Electrostatic Precipitator ◽  
Supply System ◽  
System Stability ◽  
Engineering Practice ◽  
Single Chip ◽  
High Voltage Power Supply ◽  
The Stability

The paper designs a three-phase high voltage power supply system based on active disturbance rejection controller which make single-chip microcomputer ATmega128 as the main control chip and the system improve the stability and control precision of dust removing power. Engineering practice shows that, the DC power supply system has the advantages of convenient operation, high work efficiency, system stability.

Performance Characteristics of Cdte Gamma-Ray Spectrometers

1993 ◽  
Vol 302 ◽  
Author(s):  
Michael R. Squillante ◽  
Herbert Cole ◽  
Peter Waer ◽  
Gerald Entine
Keyword(s):  
Gamma Ray ◽  
Detection Efficiency ◽  
Device Fabrication ◽  
Long Term Stability ◽  
High Detection Efficiency ◽  
Plant Monitoring ◽  
Cdznte Detectors ◽  
Nuclear Detectors ◽  
Nuclear Detector

ABSTRACTThe use of cadmium telluride (CdTe) semiconductor nuclear detectors is continuing to expand into new areas because of their unique properties which include room temperature operation and high detection efficiency. In addition, they remain the material of choice in many critical applications such as nuclear medicine and power plant monitoring because of their reputation for reliability and long term stability1. CdTe is by far the most developed of the compound semiconductors used in nuclear detector applications and it offers a number of significant benefits to researchers, clinicians and engineers who have special requirements relating to size, sensitivity and operating temperature.Recently, there have been improvements in the growth of the crystalline material and in the fabrication procedures which have resulted in better performance and in the ability to produce arrays. This article describes the physical and electronic properties of CdTe nuclear detectors, discusses how the crystal growth and device fabrication procedures can affect these properties, and compares the performance to CdZnTe detectors.

scholarly journals High-voltage power supply with improved thermostability for Xenon gamma-ray spectrometer

2016 ◽  
Vol 675 (4) ◽  
pp. 042038
Author(s):  
D Petrenko ◽  
Z Uteshev ◽  
A Novikov ◽  
A Shustov ◽  
K Vlasik ◽  
...  
Keyword(s):  
High Voltage ◽  
Power Supply ◽  
Gamma Ray ◽  
High Voltage Power Supply ◽  
Gamma Ray Spectrometer

Performance Characteristics of CDTE Gamma-Ray Spectrometers

1994 ◽  
Vol 299 ◽  
Author(s):  
Michael R. Squillante ◽  
Herbert Cole ◽  
Peter Waer ◽  
Gerald Entine
Keyword(s):  
Gamma Ray ◽  
Detection Efficiency ◽  
Device Fabrication ◽  
Long Term Stability ◽  
High Detection Efficiency ◽  
Plant Monitoring ◽  
Cdznte Detectors ◽  
Nuclear Detectors ◽  
Nuclear Detector

AbstractThe use of cadmium telluride (CdTe) semiconductor nuclear detectors is continuing to expand into new areas because of their unique properties which include room temperature operation and high detection efficiency. In addition, they remain the material of choice in many critical applications such as nuclear medicine and power plant monitoring because of their reputation for reliability and long term stability1. CdTe is by far the most developed of the compound semiconductors used in nuclear detector applications and it offers a number of significant benefits to researchers, clinicians and engineers who have special requirements relating to size, sensitivity and operating temperature.Recently, there have been improvements in the growth of the crystalline material and in the fabrication procedures which have resulted in better performance and in the ability to produce arrays. This article describes the physical and electronic properties of CdTe nuclear detectors, discusses how the crystal growth and device fabrication procedures can affect these properties, and compares the performance to CdZnTe detectors.

scholarly journals Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors

2020 ◽  
Vol 50 ◽  
pp. 2060017
Author(s):  
Katarína Sedlačková ◽  
Bohumír Zaťko ◽  
Márius Pavlovič ◽  
Andrea Šagátová ◽  
Vladimír Nečas
Keyword(s):  
Schottky Barrier ◽  
Electron Irradiation ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Pulse Height ◽  
Radiation Detectors ◽  
Peak Position ◽  
Semiconductor Detectors ◽  
Position Detection ◽  
High Detection Efficiency

High detection efficiency and good room temperature performance of Schottky barrier CdTe semiconductor detectors make them well suited especially for X-ray and gamma-ray detectors. In this contribution, we studied the effect of electron irradiation on the spectrometric performance of the Schottky barrier CdTe detectors manufactured from the chips of size [Formula: see text] mm3 with In/Ti anode and Pt cathode electrodes (Acrorad Co., Ltd.). Electron irradiation of the detectors was performed by 5 MeV electrons at RT using a linear accelerator UELR 5-1S. Different accumulated doses from 0.5 kGy up to 1.25 kGy were applied and the consequent degradation of the spectrometric properties was evaluated by measuring the pulse-height gamma-spectra of [Formula: see text] radioisotope source. The spectra were collected at different reverse voltages from 300 V up to 500 V. The changes of selected significant parameters, like energy resolution, peak position, detection efficiency and leakage current were monitored and evaluated to quantify the radiation hardness of the studied detectors. The results showed remarkable worsening of their spectrometric parameters even at relatively low applied doses of 1.25 kGy.

Study on TlBr Radioactive Detector

2017 ◽  
Author(s):  
He Li-xia ◽  
Hao Xiao-yong ◽  
He Gao-kui
Keyword(s):  
Room Temperature ◽  
High Energy Physics ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Nuclear Material ◽  
High Energy ◽  
High Detection ◽  
High Detection Efficiency ◽  
Excellent Energy Resolution ◽  
Energy Physics

TlBr is a kind of semiconductor material. Due to its promising physical properties and can be used at room temperature, it is continually studied as X and gamma ray detectors candidate material. Both of its atomic number and density are high. It also has large band-gap (B = 2.68eV) and low ionization energy. TlBr device exhibits high detection efficiency and excellent energy resolution. It can be easily fabricated or compacted in small housing. So it is a reasonable selection in the fields of nuclear material inspection and safeguards property, national security, spatial and high energy physics researches. The paper investigates the TlBr radioactive detector development and fabrication procedures. The processing detail information and signals collection are emphasized in different section. The prototype detectors were irradiated by Am-241 and corresponding spectrum was obtained. The photoelectric peak at 59.5keV is distinguished visible and the best resolution at 59.5keV is 4.15keV (7%).

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