Performance Characteristics of Cdte Gamma-Ray Spectrometers

1993 ◽  
Vol 302 ◽  
Author(s):  
Michael R. Squillante ◽  
Herbert Cole ◽  
Peter Waer ◽  
Gerald Entine
Keyword(s):  
Gamma Ray ◽  
Detection Efficiency ◽  
Device Fabrication ◽  
Long Term Stability ◽  
High Detection Efficiency ◽  
Plant Monitoring ◽  
Cdznte Detectors ◽  
Nuclear Detectors ◽  
Nuclear Detector

ABSTRACTThe use of cadmium telluride (CdTe) semiconductor nuclear detectors is continuing to expand into new areas because of their unique properties which include room temperature operation and high detection efficiency. In addition, they remain the material of choice in many critical applications such as nuclear medicine and power plant monitoring because of their reputation for reliability and long term stability1. CdTe is by far the most developed of the compound semiconductors used in nuclear detector applications and it offers a number of significant benefits to researchers, clinicians and engineers who have special requirements relating to size, sensitivity and operating temperature.Recently, there have been improvements in the growth of the crystalline material and in the fabrication procedures which have resulted in better performance and in the ability to produce arrays. This article describes the physical and electronic properties of CdTe nuclear detectors, discusses how the crystal growth and device fabrication procedures can affect these properties, and compares the performance to CdZnTe detectors.

Performance Characteristics of CDTE Gamma-Ray Spectrometers

1994 ◽  
Vol 299 ◽  
Author(s):  
Michael R. Squillante ◽  
Herbert Cole ◽  
Peter Waer ◽  
Gerald Entine
Keyword(s):  
Gamma Ray ◽  
Detection Efficiency ◽  
Device Fabrication ◽  
Long Term Stability ◽  
High Detection Efficiency ◽  
Plant Monitoring ◽  
Cdznte Detectors ◽  
Nuclear Detectors ◽  
Nuclear Detector

AbstractThe use of cadmium telluride (CdTe) semiconductor nuclear detectors is continuing to expand into new areas because of their unique properties which include room temperature operation and high detection efficiency. In addition, they remain the material of choice in many critical applications such as nuclear medicine and power plant monitoring because of their reputation for reliability and long term stability1. CdTe is by far the most developed of the compound semiconductors used in nuclear detector applications and it offers a number of significant benefits to researchers, clinicians and engineers who have special requirements relating to size, sensitivity and operating temperature.Recently, there have been improvements in the growth of the crystalline material and in the fabrication procedures which have resulted in better performance and in the ability to produce arrays. This article describes the physical and electronic properties of CdTe nuclear detectors, discusses how the crystal growth and device fabrication procedures can affect these properties, and compares the performance to CdZnTe detectors.

Study on Thallium Bromide Radioactive Detector

2019 ◽  
Vol 5 (2) ◽  
Author(s):  
He Li-xia ◽  
Hao Xiao-yong ◽  
He Gao-kui
Keyword(s):  
High Energy Physics ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Nuclear Material ◽  
High Energy ◽  
Device Fabrication ◽  
Signal Acquisition ◽  
X Ray ◽  
Thallium Bromide ◽  
And Performance

Thallium bromide (TlBr) is a compound semiconductor material, which can be used for X-ray and gamma-ray detectors and can be used at room temperature. It has excellent physical properties, high atomic number and density, wide bandgap (B = 2.68 eV), and low ionization energy. Compared with other X-ray and gamma-ray detection materials, TlBr devices have high detection efficiency and excellent energy resolution performance. So TlBr is suitable for housing in small tubes or shells, and it can be widely used in nuclear material measurement, safeguards verification, national security, space high-energy physics research, and other fields. Based on the fabrication of TlBr prototype detector, this paper focuses on the device fabrication and signal acquisition technology. Gamma-ray spectrum measurements and performance tests are carried out with AM-241 radioactive source. The results show that the special photoelectric peak of 59.5 keV is clearly visible, and the optimal resolution is 4.15 keV (7%).

scholarly journals LONG-TERM STABILITY OF NONTHERMAL X-RAY MODULATION IN THE GAMMA-RAY BINARY LS 5039

2009 ◽  
Vol 697 (1) ◽  
pp. L1-L5 ◽  
Author(s):  
Tetsuichi Kishishita ◽  
Takaaki Tanaka ◽  
Yasunobu Uchiyama ◽  
Tadayuki Takahashi
Keyword(s):  
Gamma Ray ◽  
X Ray ◽  
Term Stability ◽  
Long Term Stability

scholarly journals Effects of electron irradiation on spectrometric properties of Schottky barrier CdTe radiation detectors

2020 ◽  
Vol 50 ◽  
pp. 2060017
Author(s):  
Katarína Sedlačková ◽  
Bohumír Zaťko ◽  
Márius Pavlovič ◽  
Andrea Šagátová ◽  
Vladimír Nečas
Keyword(s):  
Schottky Barrier ◽  
Electron Irradiation ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Pulse Height ◽  
Radiation Detectors ◽  
Peak Position ◽  
Semiconductor Detectors ◽  
Position Detection ◽  
High Detection Efficiency

High detection efficiency and good room temperature performance of Schottky barrier CdTe semiconductor detectors make them well suited especially for X-ray and gamma-ray detectors. In this contribution, we studied the effect of electron irradiation on the spectrometric performance of the Schottky barrier CdTe detectors manufactured from the chips of size [Formula: see text] mm3 with In/Ti anode and Pt cathode electrodes (Acrorad Co., Ltd.). Electron irradiation of the detectors was performed by 5 MeV electrons at RT using a linear accelerator UELR 5-1S. Different accumulated doses from 0.5 kGy up to 1.25 kGy were applied and the consequent degradation of the spectrometric properties was evaluated by measuring the pulse-height gamma-spectra of [Formula: see text] radioisotope source. The spectra were collected at different reverse voltages from 300 V up to 500 V. The changes of selected significant parameters, like energy resolution, peak position, detection efficiency and leakage current were monitored and evaluated to quantify the radiation hardness of the studied detectors. The results showed remarkable worsening of their spectrometric parameters even at relatively low applied doses of 1.25 kGy.

scholarly journals Designing and setting up the scintillationdetector using CsI(Tl) crystals and avalanche photodiode for gamma-ray measurement

2021 ◽  
Vol 63 (3) ◽  
pp. 46-49
Author(s):  
Dinh Khang Pham ◽  
◽  
Tien Hung Dinh ◽  
Kim Chien Dinh ◽  
Van Hiep Cao ◽  
...  
Keyword(s):  
Power Supply ◽  
Power Supply System ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Avalanche Photodiode ◽  
High Voltage Power Supply ◽  
Wide Range ◽  
High Detection Efficiency ◽  
User Friendly ◽  
Charge Sensitive Preamplifier

Localization of the scintillation detectors manufacturing process has many benefits because of the high detection efficiency of the detectors, user-friendly, and consistent with general research objectives. Using a photodiode instead of a photomultiplier tube (PMT) allows saving energy, shortening the detector volume, and removing high voltage power supply and amplifier. The combination of CsI(Tl) scintillator, avalanche photodiode, charge sensitive preamplifier, wide range amplifier, and power supply system has been integrated into the detector. This study presents new results in manufacturing a home-made scintillation detector using avalanche photodiode. The detectors of this type can be used in hospitals, in the nuclear laboratory of universities for the students training, etc.

Long-term Stability of Mixed Perovskites

2015 ◽  
Vol 1771 ◽  
pp. 193-198 ◽  
Author(s):  
Prashant K Sarswat ◽  
Michael L Free
Keyword(s):  
Atmospheric Condition ◽  
Wide Band ◽  
Device Fabrication ◽  
Semiconductor Layer ◽  
Wide Band Gap ◽  
Perovskite Layer ◽  
Structural Modifications ◽  
Term Stability ◽  
Long Term Stability

ABSTRACTLong term stability of mixed perovskite compounds is one of the important concerns for prolonged viability and economical use of perovskite based solar cells. Degradation in perovskite films mainly occurs due to exposure to moisture. Hence, a controlled atmospheric condition and lower humidity is preferred for device fabrication and use. Many different strategies such as use of thin and wide band gap semiconductor layer, improvement in pour filling of metal oxide film, and utilization of AgTFSI have been attempted to improve device stability. However, for long term durability, there is an urgent need to increase stability of parent perovskite layer, apart from use of protective layers. In this study we examined water resistant additive, structural modifications, and stoichiometric modification for enhanced film durability. These strategies and preliminary results are discussed in this report.

A New Algorithm for Spectral Drift Calculation in a Gamma-Ray Spectrometer

2011 ◽  
Vol 346 ◽  
pp. 705-710 ◽  
Author(s):  
Zhang Jian Qin ◽  
Liang Quan Ge ◽  
Qi Fan Wu ◽  
Jian Ping Cheng
Keyword(s):  
Gamma Ray ◽  
Feedback Regulation ◽  
Energy Spectra ◽  
Gamma Energy ◽  
Long Term Stability ◽  
Gamma Ray Spectrometer ◽  
Fpga Chip ◽  
Logic Unit

Spectral drift of any origin consisting of detectors and nuclear electronics affects the long-term stability in a gamma-ray spectrometer, which is essential to maintaining the high quality of gamma energy spectra. The feedback regulation according to the quantity of spectral drift can restore the system’s stability. A new algorithm for spectral drift calculation is given in this paper. A digital logic unit is developed in a FPGA chip based on the algorithm, and a MCU coordinating with it can fast calculate the spectral drift within only less than 110 instruction periods.

Study on TlBr Radioactive Detector

2017 ◽  
Author(s):  
He Li-xia ◽  
Hao Xiao-yong ◽  
He Gao-kui
Keyword(s):  
Room Temperature ◽  
High Energy Physics ◽  
Gamma Ray ◽  
Detection Efficiency ◽  
Nuclear Material ◽  
High Energy ◽  
High Detection ◽  
High Detection Efficiency ◽  
Excellent Energy Resolution ◽  
Energy Physics

TlBr is a kind of semiconductor material. Due to its promising physical properties and can be used at room temperature, it is continually studied as X and gamma ray detectors candidate material. Both of its atomic number and density are high. It also has large band-gap (B = 2.68eV) and low ionization energy. TlBr device exhibits high detection efficiency and excellent energy resolution. It can be easily fabricated or compacted in small housing. So it is a reasonable selection in the fields of nuclear material inspection and safeguards property, national security, spatial and high energy physics researches. The paper investigates the TlBr radioactive detector development and fabrication procedures. The processing detail information and signals collection are emphasized in different section. The prototype detectors were irradiated by Am-241 and corresponding spectrum was obtained. The photoelectric peak at 59.5keV is distinguished visible and the best resolution at 59.5keV is 4.15keV (7%).

Multi-Element Mercuric Iodide Detector Systems for X-Ray and Gamma-Ray Imaging

1993 ◽  
Vol 302 ◽  
Author(s):  
Bradley E. Patt
Keyword(s):  
Large Scale ◽  
High Efficiency ◽  
Gamma Ray ◽  
Design Criterion ◽  
Mercuric Iodide ◽  
Long Term Stability ◽  
Gamma Ray Imaging ◽  
Medical Diagnostic ◽  
Camera Design

ABSTRACTThe advancement of room-temperature mercuric iodide detector technology to the point of spectroscopy-grade energy resolution coupled with the advancement in long-term stability and the high efficiency of these detectors now make it's use in large scale array systems for x- and gamma-ray imaging applications viable. Camera design criterion differ depending upon the application. A HgI2 gamma-ray camera developed at EG&G Energy Measurements has been used for imaging with various apertures, and the energy dispersive imaging aspects have been examined. Concepts for applications such as medical diagnostic imaging and a satellite based telescopes for x- and gamma-ray mapping have been objectified.

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