Injected ion energy dependence of SiC film deposited by low-energy SiC3H9+ ion beam produced from hexamethyldisilane

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

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Sputtering of silicon nanopowders by an argon cluster ion beam

Beilstein Journal of Nanotechnology ◽

10.3762/bjnano.10.13 ◽

2019 ◽

Vol 10 ◽

pp. 135-143 ◽

Cited By ~ 4

Author(s):

Xiaomei Zeng ◽

Vasiliy Pelenovich ◽

Zhenguo Wang ◽

Wenbin Zuo ◽

Sergey Belykh ◽

...

Keyword(s):

Energy Dependence ◽

Ion Beam ◽

Finite Size ◽

Low Energy ◽

Finite Size Effect ◽

Target Density ◽

Cluster Ion ◽

Sputtering Yield ◽

Beam Parameters ◽

Silicon Nanopowders

In this work an Ar+ cluster ion beam with energy in the range of 10–70 keV and dose of 7.2 × 1014–2.3 × 1016 cluster/cm2 was used to irradiate pressed Si nanopowder targets consisting of particles with a mean diameter of 60 nm. The influence of the target density and the cluster ion beam parameters (energy and dose) on the sputtering depth and sputtering yield was studied. The sputtering yield was found to decrease with increasing dose and target density. The energy dependence demonstrated an unusual non-monotonic behavior. At 17.3 keV a maximum of the sputtering yield was observed, which was more than forty times higher than that of the bulk Si. The surface roughness at low energy demonstrates a similar energy dependence with a maximum near 17 keV. The dose and energy dependence of the sputtering yield was explained by the competition of the finite size effect and the effect of debris formation.

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Incident ion energy dependence of bubble formation on tungsten surface with low energy and high flux helium plasma irradiation

Journal of Nuclear Materials ◽

10.1016/s0022-3115(02)01368-5 ◽

2003 ◽

Vol 313-316 ◽

pp. 97-101 ◽

Cited By ~ 104

Author(s):

D. Nishijima ◽

M.Y. Ye ◽

N. Ohno ◽

S. Takamura

Keyword(s):

Energy Dependence ◽

Bubble Formation ◽

Low Energy ◽

Helium Plasma ◽

High Flux ◽

Ion Energy ◽

Plasma Irradiation ◽

Tungsten Surface

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Surface and Bulk Microstructural Modifications in Amorphous Carbon Films after Post-Growth Low Energy Ion Beam Irradiation

MRS Proceedings ◽

10.1557/proc-650-r3.42 ◽

2000 ◽

Vol 650 ◽

Author(s):

P. Patsalas ◽

S. Logothetidis

Keyword(s):

Amorphous Carbon ◽

Amorphous Matrix ◽

Ion Beam ◽

Carbon Films ◽

Low Energy ◽

Beam Irradiation ◽

X Ray Diffraction ◽

Ion Beam Irradiation ◽

Ion Energy ◽

X Ray

ABSTRACTWe present the crystallization effects occurring in sputtered amorphous Carbon (a-C) thin films deposited on Si induced by post-growth low energy (0.5-1.5 keV) Ar+ ion beam irradiation (IBI). The a-C films after IBI have the form of an amorphous matrix with embedded crystalline regions. X-ray diffraction and Electron Microscopy measurements identified the crystalline phases of carbon and SiC. We study in detail the effects of ion energy and fluence on the crystallization process. It was found that low fluence (∼2×1016 ions/cm2) of ions with an optimum ion energy (∼1.5 keV) promoted the diamond formation. X-Ray Reflectivity (XRR) and Spectroscopic Ellipsometry were used to study the amorphous matrix. XRR discriminated the IBI induced surface and bulk effects through the density and the a-C surface roughness, showing surface smoothing to be more prominent for low energy IBI.

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Low Energy Fluoroboron Ion Beam Interaction with Silicon Single Crystals

MRS Proceedings ◽

10.1557/proc-279-625 ◽

1992 ◽

Vol 279 ◽

Author(s):

L. J. Huang ◽

W. M. Lau ◽

I. V. Mitchell ◽

S.-T. Lee

Keyword(s):

Accumulation Rate ◽

Ion Beam ◽

Etching Rate ◽

Silicon Crystal ◽

Low Energy ◽

Implantation Energy ◽

Ion Energy ◽

Ion Interactions ◽

Energy Dependent ◽

Physical And Chemical

ABSTRACTFluoroboron (BF2+) ion implantation into silicon is frequently used for fabrication of shallow junctions. For scaling down of the junction dimensions, one of the efficient approaches is to lower the implantation energy. This work reports fluoroboron ion interactions with (100) oriented silicon at 10 to 500 eV ion energy. Ion bombardment was carried out using a mass-separated BF2+ ion beam in an ultrahigh vacuum low energy ion beam system. The temperature of the silicon crystal during bombardment was kept either at room temperature or 500°C. The reactions (both etching and incorporation) were characterized by x-ray photoemission spectroscopy (XPS), Rutherford backscattering (RBS) and Raman scattering. The results show that BF2+ ions dissociated on the silicon surface at an energy as low as 10 eV and most of fluorine segregated to the surface and desorbed. Both the physical and chemical etching rate of the beam were energy dependent but much lower than the accumulation rate. For beam fluences higher than 1 × 1018/cm2, continuous amorphous boron films were deposited on silicon.

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Low-energy mass-selected ion beam production of fragments produced from hexamethyldisilane for SiC film formation

Journal of Applied Physics ◽

10.1063/1.4943497 ◽

2016 ◽

Vol 119 (10) ◽

pp. 103302 ◽

Cited By ~ 11

Author(s):

Satoru Yoshimura ◽

Satoshi Sugimoto ◽

Masato Kiuchi

Keyword(s):

Film Formation ◽

Ion Beam ◽

Low Energy ◽

Beam Production ◽

Sic Film

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Ultrathin Nitride Films Grown Under Low-Energy Ion Bombardment

MRS Proceedings ◽

10.1557/proc-316-809 ◽

1993 ◽

Vol 316 ◽

Author(s):

Zhong-Min Ren ◽

Zhi-Feng Ying ◽

Xia-Xing Xiong ◽

Mao-Qi He ◽

Yuan-Cheng DU ◽

...

Keyword(s):

Activation Energy ◽

Silicon Nitride ◽

Substrate Temperature ◽

Photoelectron Spectroscopy ◽

Ion Beam ◽

Atomic Ratio ◽

Low Energy ◽

Ion Energy ◽

Silicon Nitride Films ◽

Thermal Nitridation

ABSTRACTBombardment of silicon surfaces by low-energy nitrogen ions has been investigated as a possible process for growing films of silicon nitride at relatively low temperature(<500°C). Broad ion beams of energy 300–1200eV have been used to grow ultrathin silicon nitride films. Film thickness and chemical states are analyzed using ellipsometery, X-ray photoelectron spectroscopy (XPS), and Auger electron spectroscopy(AES). As a result, thicknesses dependence on ion energy, substrate temperature and implantation time have been investigated. The thicknesses of films obtained appear to increase with ion energy in the range from 300 to 1200eV, and with time of bombardment. The thicknesses are also observed to vary slightly with substrate temperature. The growth mechanism has also been investigated and discussed. The average activation energy of nitridation rates is about 3.5meV which indicates nonthermal process kinetics, compared to an activation energy of 0.2–0.6eV for thermal nitridation. AES results show that the atomic ratio [N]/[Si] is about 1.5, larger than that of pure Si3N4. All the analyses show that silicon nitride films of about 60Å thickness have been grown on silicon by low-energy ion beam nitridation.

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