Magnetic Current Imaging with Magnetic Tunnel Junction Sensors—Case Study and Analysis

2006 ◽  
Author(s):  
Benaiah D. Schrag ◽  
Matthew J. Carter ◽  
Xiaoyong Liu ◽  
Jan S. Hoftun ◽  
Gang Xiao
Keyword(s):  
Tunnel Junction ◽  
Quantum Interference ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Magnetic Current ◽  
Root Cause ◽  
Cause Of Failure ◽  
Gmr Sensors ◽  
Sensor Probe

Abstract We describe the use of magnetic tunnel junction (MTJ) sensors for the purposes of magnetic current imaging. First, a case study shows how magnetic and current density images generated using an MTJ sensor probe were used to isolate the root cause of failure in a newly-designed ASIC. We then give a brief introduction to the operation and construction of MTJ sensors. Finally, a full comparison is made between the three types of sensors which have been used for magnetic current imaging: giant magnetoresistive (GMR) sensors, superconducting quantum interference devices (SQUIDs), and magnetic tunnel junctions. These three technologies are quantitatively compared on the basis of spatial resolution, sensitivity, and geometry.

High-Resolution Backside GMR Magnetic Current Imaging on a Contour-Milled Globally Ultrathin Die

2014 ◽  
Author(s):  
D. Vallett ◽  
J. Gaudestad ◽  
C. Richardson
Keyword(s):  
Quantum Interference ◽  
Flip Chip ◽  
Milling Process ◽  
Dramatic Improvement ◽  
Superconducting Quantum Interference Device ◽  
Density Peak ◽  
Magnetic Current ◽  
Gmr Sensors ◽  
Silicon Thickness ◽  
A Current

Abstract Magnetic current imaging (MCI) using superconducting quantum interference device (SQUID) and giant-magnetoresistive (GMR) sensors is an effective method for localizing defects and current paths [1]. The spatial resolution (and sensitivity) of MCI is improved significantly when the sensor is as close as possible to the current paths and associated magnetic fields of interest. This is accomplished in part by nondestructive removal of any intervening passive layers (e.g. silicon) in the sample. This paper will present a die backside contour-milling process resulting in an edge-to-edge remaining silicon thickness (RST) of < 5 microns, followed by a backside GMR-based MCI measurement performed directly on the ultra-thin silicon surface. The dramatic improvement in resolving current paths in an ESD protect circuit is shown as is nanometer scale resolution of a current density peak due to a power supply shortcircuit defect at the edge of a flip-chip packaged die.

Case Study—Failure Analysis of a Multiplexer

2016 ◽  
Author(s):  
Michael Woo ◽  
Marcos Campos ◽  
Luigi Aranda
Keyword(s):  
Failure Analysis ◽  
High Reliability ◽  
Component Failure ◽  
Root Cause ◽  
Knowing That ◽  
Cause Of Failure ◽  
The Cost

Abstract A component failure has the potential to significantly impact the cost, manufacturing schedule, and/or the perceived reliability of a system, especially if the root cause of the failure is not known. A failure analysis is often key to mitigating the effects of a componentlevel failure to a customer or a system; minimizing schedule slips, minimizing related accrued costs to the customer, and allowing for the completion of the system with confidence that the reliability of the product had not been compromised. This case study will show how a detailed and systemic failure analysis was able to determine the exact cause of failure of a multiplexer in a high-reliability system, which allowed the manufacturer to confidently proceed with production knowing that the failure was not a systemic issue, but rather that it was a random “one time” event.

Troubleshooting Cable Deployed Thru Tubing Electrical Submersible Pumps: A Case Study from South East Asia

2021 ◽  
Author(s):  
Saurabh Anand ◽  
Eadie Azahar B Rosland ◽  
Elsayed Ouda Ghonim ◽  
Latief Riyanto ◽  
Khairul Azhar B Abu Bakar ◽  
...  
Keyword(s):  
Low Cost ◽  
Power Cable ◽  
Related Data ◽  
Root Cause ◽  
Artificial Lift ◽  
Electrical Submersible Pumps ◽  
Cause Of Failure ◽  
Water Cut ◽  
Discharge Pressure

Abstract PETRONAS had embarked on an ambitious thru tubing ESP journey in 2016 and had installed global first truly rig less offshore Thru Tubing ESP (TTESP) in 2017. To replicate the success of the first installation, TTESP's were installed in Field – T. However, all these three TTESP's failed to produce fluids to surface. This paper provides the complete details of the troubleshooting exercise that was done to find the cause of failure in these wells. The 3 TTESP's in Field – T were installed as per procedure and was ready to be commissioned. However, during the commissioning, it was noticed that the discharge pressure of the ESP did not build-up and the TTESP's tripped due to high temperature after 15 – 30 mins of operation. Hence none of the 3 TTESP's could be successfully commissioned. Considering the strategic importance of TTESP's in PETRONAS's artificial lift plans, detailed troubleshooting exercise was done to find the root cause of failure to produce in these three wells. This troubleshooting exercise included diesel bull heading which gave some key pump performance related data. The three TTESP's installed in Field – T were of size 2.72" and had the potential to produce an average 1500 BLPD at 80% water cut. The TTESP deployment was fully rigless and was installed using 0.8" ESP power cable. The ESP and the cable was hung-off from the surface using a hanger – spool system. The entire system is complex, and the installation procedure needs to be proper to ensure a successful installation. The vast amount of data gathered during the commissioning and troubleshooting exercise was used for determining the failure reason and included preparation of static and dynamic well ESP model. After detailed technical investigative work, the team believes to have found the root cause of the issue which explains the data obtained during commission and troubleshooting phase. The detailed troubleshooting workflow and actual data obtained will be presented in this paper. A comprehensive list of lessons learnt will also be presented which includes very important aspects that needs to be considered during the design and installation of TTESP. The remedial plan is finalized and will be executed during next available weather window. The key benefit of a TTESP installation is its low cost which is 20% – 30% of a rig-based ESP workover in offshore. Hence it is expected that TTESP installations will pick-up globally and it's important for any operator to fully understand the TTESP systems and the potential pain points. PETRONAS has been a pioneer in TTESP field, and this paper will provide details on the learning curve during the TTESP journey.

scholarly journals Picosecond Optospintronic Tunnel Junctions for Non-volatile Photonic Memories

2021 ◽  
Author(s):  
Luding Wang ◽  
Houyi Cheng ◽  
Pingzhi Li ◽  
Yang Liu ◽  
Youri van Hees ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Data Access ◽  
Building Blocks ◽  
Spin Transfer Torque ◽  
Time Resolved ◽  
Physical Constraints ◽  
Spin Polarized ◽  
All Optical

Abstract Perpendicular magnetic tunnel junctions are one of the building blocks for spintronic memories, which allow fast nonvolatile data access, offering substantial potentials to revolutionize the mainstream computing architecture. However, conventional switching mechanisms of such devices are fundamentally hindered by spin polarized currents, either spin transfer torque or spin orbit torque with spin precession time limitation and excessive power dissipation. These physical constraints significantly stimulate the advancement of modern spintronics. Here, we report an optospintronic tunnel junction using a photonic-spintronic combination. This composite device incorporates an all-optically switchable Co/Gd bilayer coupled to a CoFeB/MgO-based perpendicular magnetic tunnel junction by the Ruderman-Kittel-Kasuya-Yosida interaction. A picosecond all-optical operation of the optospintronic tunnel junction is explicitly confirmed by time-resolved measurements. Moreover, the device shows a considerable tunnel magnetoresistance and thermal stability. This proof-of-concept device represents an essential step towards ultrafast photonic memories with THz data access, as well as ultralow power consumption.

Large magnetoresistance and spin-polarized photocurrent in La2/3Sr1/3MnO3(Co)/quaterthiophene/La2/3Sr1/3MnO3 organic magnetic tunnel junctions

2019 ◽  
Vol 7 (14) ◽  
pp. 4079-4088 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Xiaocha Wang
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Spin Injection ◽  
Magnetic Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Tunneling Magnetoresistance ◽  
Spin Polarized

Large tunneling magnetoresistance, perfect spin injection and fully spin-polarized photocurrent are realized in a LSMO/T4/LSMO organic magnetic tunnel junction.

Case Study of a DDR Loopback Test Failure Encountered on a Map Ball Grid Array Packaged Device

2017 ◽  
Author(s):  
Jose Z. Garcia ◽  
Kris Dickson
Keyword(s):  
Failure Analysis ◽  
Ball Grid Array ◽  
Analysis Techniques ◽  
Root Cause ◽  
Test Methodology ◽  
Cause Of Failure ◽  
Test Failure

Abstract This paper describes how a DDR loopback test failure was analyzed successfully after being repackaged from an MBGA into a TBGA package substrate. DDR loopback test methodology is discussed as well as the advanced failure analysis techniques that were used to identify the root cause of failure.

Root Cause Finding of a Diode Leakage Failure Using Scanning Magnetic Microscopy and ToF-SIMS as Key Methods

2006 ◽  
Author(s):  
H. Preu ◽  
W. Mack ◽  
T. Kilger ◽  
B. Seidl ◽  
J. Walter ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Quantum Interference ◽  
Leakage Currents ◽  
Root Cause ◽  
Microelectronic Devices ◽  
Successful Approach ◽  
Magnetic Microscopy ◽  
Leakage Failure ◽  
Root Cause Identification

Abstract One challenge in failure analysis of microelectronic devices is the localization and root cause finding of leakage currents in passives. In this case study we present a successful approach for failure analysis of a diode leakage failure. An analytical flow will be introduced, which contains standard techniques as well as SQUID (superconducting quantum interference device) scanning magnetic microscopy and ToFSIMS as key methods for localization and root cause identification. [1]

Heat Generation in Tunnel Junctions for Current-Written Pinned Layer Switching

2006 ◽  
Vol 514-516 ◽  
pp. 323-327 ◽  
Author(s):  
João Ventura ◽  
A. Pereira ◽  
José M. Teixeira ◽  
João P. Araújo ◽  
Francisco Carpinteiro ◽  
...  
Keyword(s):  
Tunnel Junction ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Electrical Current ◽  
Blocking Temperature ◽  
Thermally Induced ◽  
Small Magnetic Field ◽  
Heating And Cooling ◽  
Antiferromagnetic Layer ◽  
Current Flows

To commute between the different resistance states of a magnetic tunnel junction (TJ) one can use a thermally-induced pinned layer switching mechanism. When a sufficiently high electrical current flows through the insulating barrier, local temperatures inside the tunnel junction can increase above the blocking temperature of the antiferromagnetic layer used to pin the magnetization of the adjacent ferromagnet. Then, it is possible to switch the magnetization of the pinned layer with a small magnetic field H and thus revert the magnetic state of the TJ. Here we demonstrate thermally-induced pinned layer switching in thin magnetic tunnel junctions. We further present numerical results that suggest that heating is small when one takes into consideration the uniform current density flowing through the tunnel junction and that one must conclude that nanoconstrictions concentrate most of the current, increasing local current densities and temperature. Simulation of heating and cooling times demonstrates that current-induced pinned layer switching is a competitive mechanism for actual technological applications.

Case Study of ESD-induced Pin Leakage Failure Solved Using Novel Powered TIVA Technique

2018 ◽  
Author(s):  
Sneta Mishra ◽  
Daniel R. Bockelman
Keyword(s):  
Root Cause ◽  
Leakage Failure

Abstract A case study is presented of a core CPU product where FA/FI debug is performed for an ESD-related pin leakage issue on an IO family to root cause and qualify the product. A Powered TIVA technique is used to localize the damage to the termination resistor circuitry of the affected IO block when the pin is tristated using a device tester. Failure characterization shows a gate to drain short on the transistor, with nanoprobing confirming a solid short on gate to drain and TEM finding a short at the location indicated by the TIVA hits.

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