Case Study—Failure Analysis of a Multiplexer

2016 ◽  
Author(s):  
Michael Woo ◽  
Marcos Campos ◽  
Luigi Aranda
Keyword(s):  
Failure Analysis ◽  
High Reliability ◽  
Component Failure ◽  
Root Cause ◽  
Knowing That ◽  
Cause Of Failure ◽  
The Cost

Abstract A component failure has the potential to significantly impact the cost, manufacturing schedule, and/or the perceived reliability of a system, especially if the root cause of the failure is not known. A failure analysis is often key to mitigating the effects of a componentlevel failure to a customer or a system; minimizing schedule slips, minimizing related accrued costs to the customer, and allowing for the completion of the system with confidence that the reliability of the product had not been compromised. This case study will show how a detailed and systemic failure analysis was able to determine the exact cause of failure of a multiplexer in a high-reliability system, which allowed the manufacturer to confidently proceed with production knowing that the failure was not a systemic issue, but rather that it was a random “one time” event.

Case Study of a DDR Loopback Test Failure Encountered on a Map Ball Grid Array Packaged Device

2017 ◽  
Author(s):  
Jose Z. Garcia ◽  
Kris Dickson
Keyword(s):  
Failure Analysis ◽  
Ball Grid Array ◽  
Analysis Techniques ◽  
Root Cause ◽  
Test Methodology ◽  
Cause Of Failure ◽  
Test Failure

Abstract This paper describes how a DDR loopback test failure was analyzed successfully after being repackaged from an MBGA into a TBGA package substrate. DDR loopback test methodology is discussed as well as the advanced failure analysis techniques that were used to identify the root cause of failure.

Root Cause Analysis for Pin Leakage

2016 ◽  
Author(s):  
Zhigang Song ◽  
Jochonia Nxumalo ◽  
Manuel Villalobos ◽  
Sweta Pendyala
Keyword(s):  
Failure Analysis ◽  
Root Cause Analysis ◽  
Advanced Technology ◽  
Process Step ◽  
Cause Analysis ◽  
Hard Mask ◽  
Technology Node ◽  
Root Cause ◽  
Tools And Techniques

Abstract Pin leakage continues to be on the list of top yield detractors for microelectronics devices. It is simply manifested as elevated current with one pin or several pins during pin continuity test. Although many techniques are capable to globally localize the fault of pin leakage, root cause analysis and identification for it are still very challenging with today’s advanced failure analysis tools and techniques. It is because pin leakage can be caused by any type of defect, at any layer in the device and at any process step. This paper presents a case study to demonstrate how to combine multiple techniques to accurately identify the root cause of a pin leakage issue for a device manufactured using advanced technology node. The root cause was identified as under-etch issue during P+ implantation hard mask opening for ESD protection diode, causing P+ implantation missing, which was responsible for the nearly ohmic type pin leakage.

Troubleshooting Cable Deployed Thru Tubing Electrical Submersible Pumps: A Case Study from South East Asia

2021 ◽  
Author(s):  
Saurabh Anand ◽  
Eadie Azahar B Rosland ◽  
Elsayed Ouda Ghonim ◽  
Latief Riyanto ◽  
Khairul Azhar B Abu Bakar ◽  
...  
Keyword(s):  
Low Cost ◽  
Power Cable ◽  
Related Data ◽  
Root Cause ◽  
Artificial Lift ◽  
Electrical Submersible Pumps ◽  
Cause Of Failure ◽  
Water Cut ◽  
Discharge Pressure

Abstract PETRONAS had embarked on an ambitious thru tubing ESP journey in 2016 and had installed global first truly rig less offshore Thru Tubing ESP (TTESP) in 2017. To replicate the success of the first installation, TTESP's were installed in Field – T. However, all these three TTESP's failed to produce fluids to surface. This paper provides the complete details of the troubleshooting exercise that was done to find the cause of failure in these wells. The 3 TTESP's in Field – T were installed as per procedure and was ready to be commissioned. However, during the commissioning, it was noticed that the discharge pressure of the ESP did not build-up and the TTESP's tripped due to high temperature after 15 – 30 mins of operation. Hence none of the 3 TTESP's could be successfully commissioned. Considering the strategic importance of TTESP's in PETRONAS's artificial lift plans, detailed troubleshooting exercise was done to find the root cause of failure to produce in these three wells. This troubleshooting exercise included diesel bull heading which gave some key pump performance related data. The three TTESP's installed in Field – T were of size 2.72" and had the potential to produce an average 1500 BLPD at 80% water cut. The TTESP deployment was fully rigless and was installed using 0.8" ESP power cable. The ESP and the cable was hung-off from the surface using a hanger – spool system. The entire system is complex, and the installation procedure needs to be proper to ensure a successful installation. The vast amount of data gathered during the commissioning and troubleshooting exercise was used for determining the failure reason and included preparation of static and dynamic well ESP model. After detailed technical investigative work, the team believes to have found the root cause of the issue which explains the data obtained during commission and troubleshooting phase. The detailed troubleshooting workflow and actual data obtained will be presented in this paper. A comprehensive list of lessons learnt will also be presented which includes very important aspects that needs to be considered during the design and installation of TTESP. The remedial plan is finalized and will be executed during next available weather window. The key benefit of a TTESP installation is its low cost which is 20% – 30% of a rig-based ESP workover in offshore. Hence it is expected that TTESP installations will pick-up globally and it's important for any operator to fully understand the TTESP systems and the potential pain points. PETRONAS has been a pioneer in TTESP field, and this paper will provide details on the learning curve during the TTESP journey.

Subsea Gas Well Late Life Restart Lesson Learned: Failure Analysis and Operating Strategy

2021 ◽  
Author(s):  
Song Wang ◽  
Lawrence Khin Leong Lau ◽  
Wu Jun Tong ◽  
Kun An ◽  
Jiang Nan Duan ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Late Life ◽  
Flow Assurance ◽  
Gas Well ◽  
Subsea Pipeline ◽  
Operating Strategy ◽  
Root Cause ◽  
Financial Impacts ◽  
Transient Multiphase Flow

Abstract This paper elucidates the importance of flow assurance transient multiphase modelling to ensure uninterrupted late life productions. This is discussed in details through the case study of shut-in and restart scenarios of a subsea gas well (namely Well A) located in South China Sea region. There were two wells (Well A and Well B) producing steadily prior to asset shut-in, as a requirement for subsea pipeline maintenance works. However, it was found that Well A failed to restart while Well B successfully resumed production after the pipeline maintenance works. Flow assurance team is called in order to understand the root cause of the failed re-start of Well A to avoid similar failure for Well B and other wells in this region. Through failure analysis of Well A, key root cause is identified and associated operating strategy is proposed for use for Well B, which is producing through the same subsea infrastructure. Transient multiphase flow assurance model including subsea Well A, subsea Well B, associated spools, subsea pipeline and subsea riser is developed and fully benchmarked against field data to ensure realistic thermohydraulics representations of the actual asset. Simulation result shows failed restart of Well A and successful restart of Well B, which fully matched with field observations. Further analysis reveals that liquid column accumulated within the wellbore of Well A associates with extra hydrostatic head which caused failed well restart. Through a series of sensitivity analysis, the possibility of successful Well A restart is investigated by manipulating topsides back pressure settings and production flowrates prior to shut-in. These serve as a methodology to systematically analyze such transient scenario and to provide basis for field operating strategy. The analysis and strategy proposed through detailed modelling and simulation serves as valuable guidance for Well B, should shut-in and restart operation is required. This study shows the importance of modelling prior to late life field operations, in order to avoid similar failed well restart, which causes significant production and financial impacts.

Reliability Estimation and Failure Analysis of Multilayer Ceramic Chip Capacitors

2003 ◽  
Vol 17 (08n09) ◽  
pp. 1318-1323 ◽  
Author(s):  
Seok Jun Yang ◽  
Jin Woo Kim ◽  
Dong Su Ryu ◽  
Myung Soo Kim ◽  
Joong Soon Jang
Keyword(s):  
Failure Analysis ◽  
Life Stress ◽  
Control Unit ◽  
Accelerated Life Testing ◽  
Reliability Estimation ◽  
Accelerated Life Test ◽  
Root Cause ◽  
Accelerated Life ◽  
Cause Of Failure ◽  
Multilayer Ceramic

This paper presents the failure analysis and the reliability estimation of a multilayer ceramic chip capacitor. For the failed samples used in an automobile engine control unit, failure analysis was made to identify the root cause of failure and it was shown that the migration and the avalanche breakdown were the dominant failure mechanisms. Next, an accelerated life testing was designed to estimate the life of the MLCC. It is assumed that Weibull lifetime distribution and the life-stress relationship proposed Prokopowicz and Vaskas. The life-stress relationship and the acceleration factor are estimated by analyzing the accelerated life test data.

Application of Advanced Back-Side Optical Techniques in ASICs

2013 ◽  
Vol 21 (3) ◽  
pp. 30-35
Author(s):  
Douglas Martin ◽  
Samuel Beilin ◽  
Brett Hamilton ◽  
Darin York ◽  
Philip Baker ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Failure Analysis ◽  
Photon Emission ◽  
Back Side ◽  
Voltage Imaging ◽  
Root Cause ◽  
Silicon Transistors ◽  
Cause Of Failure ◽  
Metal Interconnects ◽  
Application Specific

Failure analysis is important in determining root cause for appropriate corrective action. In order to perform failure analysis of microelectronic application-specific integrated circuits (ASICs) delidding the device is often required. However, determining root cause from the front side is not always possible due to shadowing effects caused by the ASIC metal interconnects. Therefore, back-side polishing is used to reveal an unobstructed view of the ASIC silicon transistors. This paper details how back-side polishing in conjunction with laser-scanned imaging (LSI), laser voltage imaging (LVI), laser voltage probing (LVP), photon emission microscopy (PEM), and laser-assisted device alterations (LADA) were used to uncover the root cause of failure of two ASICs.

Tri-Directional TEM Failure Analysis on Sample Prepared by In-Situ Lift-Out FIB and Flipstage

2014 ◽  
Author(s):  
Jie Zhu ◽  
An Yan Du ◽  
Bing Hai Liu ◽  
Eddie Er ◽  
Si Ping Zhao ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Root Cause Analysis ◽  
Wafer Surface ◽  
Tem Analysis ◽  
Cause Analysis ◽  
Root Cause

Abstract In this paper, we report an advanced sample preparation methodology using in-situ lift-out FIB and Flipstage for tridirectional TEM failure analysis. A planar-view and two cross-section TEM samples were prepared from the same target. Firstly, a planar-view lamellar parallel to the wafer surface was prepared using in-situ lift-out FIB milling. Upon TEM analysis, the planar sample was further milled in the along-gate and cross-gate directions separately. Eventually, a pillar-like sample containing a single transistor gate was obtained. Using this technique, we are able to analyze the defect from three perpendicular directions and obtain more information on the defect for failure root-cause analysis. A MOSFETs case study is described to demonstrate the procedure and advantages of this technique.

Understanding the Cu Void Formation by TEM Failure Analysis

2014 ◽  
Author(s):  
Binghai Liu ◽  
Jie Zhu ◽  
Changqing Chen ◽  
Eddie Er ◽  
Siping Zhao ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Failure Analysis ◽  
Seed Layer ◽  
Void Formation ◽  
Surface Oxidation ◽  
Alkaline Condition ◽  
Electron Diffraction Analysis ◽  
Root Cause ◽  
Cu Cmp

Abstract In this work, we present TEM failure analysis of two typical failure cases related to metal voiding in Cu BEOL processes. To understand the root cause behind the Cu void formation, we performed detailed TEM failure analysis for the phase and microstructure characterization by various TEM techniques such as EDX, EELS mapping and electron diffraction analysis. In the failure case study I, the Cu void formation was found to be due to the oxidation of the Cu seed layer which led to the incomplete Cu plating and thus voiding at the via bottom. While in failure case study II, the voiding at Cu metal surface was related to Cu CMP process drift and surface oxidation of Cu metal at alkaline condition during the final CMP process.

Magnetic Current Imaging with Magnetic Tunnel Junction Sensors—Case Study and Analysis

2006 ◽  
Author(s):  
Benaiah D. Schrag ◽  
Matthew J. Carter ◽  
Xiaoyong Liu ◽  
Jan S. Hoftun ◽  
Gang Xiao
Keyword(s):  
Tunnel Junction ◽  
Quantum Interference ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Magnetic Current ◽  
Root Cause ◽  
Cause Of Failure ◽  
Gmr Sensors ◽  
Sensor Probe

Abstract We describe the use of magnetic tunnel junction (MTJ) sensors for the purposes of magnetic current imaging. First, a case study shows how magnetic and current density images generated using an MTJ sensor probe were used to isolate the root cause of failure in a newly-designed ASIC. We then give a brief introduction to the operation and construction of MTJ sensors. Finally, a full comparison is made between the three types of sensors which have been used for magnetic current imaging: giant magnetoresistive (GMR) sensors, superconducting quantum interference devices (SQUIDs), and magnetic tunnel junctions. These three technologies are quantitatively compared on the basis of spatial resolution, sensitivity, and geometry.

A Study of SRAM Device Soft Failures Caused by Contact Volcano Defects Using Nanoprobing Analysis

2011 ◽  
Author(s):  
Yu Hsiang Shu ◽  
Vincent Huang ◽  
Chia Hsing Chao
Keyword(s):  
Failure Analysis ◽  
High Resistance ◽  
Ion Beam ◽  
Analysis Method ◽  
Root Cause ◽  
Parametric Data ◽  
Transmission Electron ◽  
Focus Ion Beam ◽  
Electrical Data

Abstract Using nanoprobing techniques to accomplish transistor parametric data has been reported as a method of failure analysis in nanometer scale defect. In this paper, we focus on how to identify the influence of Contact high resistance on device soft failures using nanoprobing analysis, and showing that the equivalent mathematical models could be used to describe the corresponding electrical data in a device with Contact high resistance issue. A case study was presented to verify that Contact volcano defect caused Contact high resistance issue, and this issue can be identified via physical failure analysis (PFA) method (e.g. Transmission Electron Microscope and Focus Ion Beam techniques) and nanoprobing analysis method. Finally, we would explain the physical root cause of Contact volcano issue.

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