High-Resolution Backside GMR Magnetic Current Imaging on a Contour-Milled Globally Ultrathin Die

2014 ◽  
Author(s):  
D. Vallett ◽  
J. Gaudestad ◽  
C. Richardson
Keyword(s):  
Quantum Interference ◽  
Flip Chip ◽  
Milling Process ◽  
Dramatic Improvement ◽  
Superconducting Quantum Interference Device ◽  
Density Peak ◽  
Magnetic Current ◽  
Gmr Sensors ◽  
Silicon Thickness ◽  
A Current

Abstract Magnetic current imaging (MCI) using superconducting quantum interference device (SQUID) and giant-magnetoresistive (GMR) sensors is an effective method for localizing defects and current paths [1]. The spatial resolution (and sensitivity) of MCI is improved significantly when the sensor is as close as possible to the current paths and associated magnetic fields of interest. This is accomplished in part by nondestructive removal of any intervening passive layers (e.g. silicon) in the sample. This paper will present a die backside contour-milling process resulting in an edge-to-edge remaining silicon thickness (RST) of < 5 microns, followed by a backside GMR-based MCI measurement performed directly on the ultra-thin silicon surface. The dramatic improvement in resolving current paths in an ESD protect circuit is shown as is nanometer scale resolution of a current density peak due to a power supply shortcircuit defect at the edge of a flip-chip packaged die.

Advanced Non-Destructive Fault Isolation Techniques for PCB Substrates Using Magnetic Current Imaging and Terahertz Time Domain Reflectometry

2018 ◽  
Author(s):  
Daechul Choi ◽  
Yoonseong Kim ◽  
Jongyun Kim ◽  
Han Kim
Keyword(s):  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Imaging System ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Magnetic Current ◽  
Isolation Techniques ◽  
Super Conducting ◽  
Non Destructive

Abstract In this paper, we demonstrate cases for actual short and open failures in FCB (Flip Chip Bonding) substrates by using novel non-destructive techniques, known as SSM (Scanning Super-conducting Quantum Interference Device Microscopy) and Terahertz TDR (Time Domain Reflectometry) which is able to pinpoint failure locations. In addition, the defect location and accuracy is verified by a NIR (Near Infra-red) imaging system which is also one of the commonly used non-destructive failure analysis tools, and good agreement was made.

Non-Destructive Open Fault Isolation in Flip-Chip Devices with Space-Domain Reflectometry

2013 ◽  
Author(s):  
W. Qiu ◽  
M.S. Wei ◽  
J. Gaudestad ◽  
V.V. Talanov
Keyword(s):  
Quantum Interference ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Fault Isolation ◽  
Superconducting Quantum Interference Device ◽  
Isolation Method ◽  
Space Domain ◽  
Open Faults ◽  
Scanning Squid ◽  
Non Destructive

Abstract Space-domain reflectometry (SDR) utilizing scanning superconducting quantum interference device (SQUID) microscopy is a newly developed non-destructive failure analysis (FA) technique for open fault isolation. Unlike the conventional open fault isolation method, time-domain reflectometry (TDR), scanning SQUID SDR provides a truly two-dimensional physical image of device under test with spatial resolution down to 30 μm [1]. In this paper, the SQUID SDR technique is used to isolate dead open faults in flip-chip devices. The experimental results demonstrate the capability of SDR in open fault detection

Magnetic Current Imaging with Magnetic Tunnel Junction Sensors—Case Study and Analysis

2006 ◽  
Author(s):  
Benaiah D. Schrag ◽  
Matthew J. Carter ◽  
Xiaoyong Liu ◽  
Jan S. Hoftun ◽  
Gang Xiao
Keyword(s):  
Tunnel Junction ◽  
Quantum Interference ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junction ◽  
Magnetic Current ◽  
Root Cause ◽  
Cause Of Failure ◽  
Gmr Sensors ◽  
Sensor Probe

Abstract We describe the use of magnetic tunnel junction (MTJ) sensors for the purposes of magnetic current imaging. First, a case study shows how magnetic and current density images generated using an MTJ sensor probe were used to isolate the root cause of failure in a newly-designed ASIC. We then give a brief introduction to the operation and construction of MTJ sensors. Finally, a full comparison is made between the three types of sensors which have been used for magnetic current imaging: giant magnetoresistive (GMR) sensors, superconducting quantum interference devices (SQUIDs), and magnetic tunnel junctions. These three technologies are quantitatively compared on the basis of spatial resolution, sensitivity, and geometry.

Localization of Dead Open in a Solder Bump by Space Domain Reflectometry

2012 ◽  
Author(s):  
David P. Vallett ◽  
Daniel A. Bader ◽  
Vladimir V. Talanov ◽  
Jan Gaudestad ◽  
Nicolas Gagliolo ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Failure Analysis ◽  
Quantum Interference ◽  
Flip Chip ◽  
Solder Bump ◽  
Frequency Range ◽  
Superconducting Quantum Interference Device ◽  
Space Domain ◽  
Non Destructive ◽  
The Magnetic Field

Abstract Space Domain Reflectometry (SDR) is a newly developed non-destructive failure analysis (FA) technique for localizing open defects in both packages and dies through mapping in space domain the magnetic field produced by a radio frequency (RF) current induced in the sample, herein the name Space Domain Reflectometry. The technique employs a scanning superconducting quantum interference device (SQUID) RF microscope operating over a frequency range from 60 to 200 MHz. In this paper we demonstrate that SDR is capable of locating defective micro bumps in a flip-chip device.

Super-Conducting Quantum Interference Device Technique: 3-D Localization of a Short within a Flip Chip Assembly

2001 ◽  
Author(s):  
Kendall Scott Wills ◽  
Omar Diaz de Leon ◽  
Kartik Ramanujachar ◽  
Charles P. Todd
Keyword(s):  
Form Factor ◽  
Failure Analysis ◽  
Time Domain ◽  
Quantum Interference ◽  
Flip Chip ◽  
Time Domain Reflectometry ◽  
Interfacial Region ◽  
Precise Localization ◽  
Super Conducting ◽  
Accuracy Of Measurement

Abstract In the current generations of devices the die and its package are closely integrated to achieve desired performance and form factor. As a result, localization of continuity failures to either the die or the package is a challenging step in failure analysis of such devices. Time Domain Reflectometry [1] (TDR) is used to localize continuity failures. However the accuracy of measurement with TDR is inadequate for effective localization of the failsite. Additionally, this technique does not provide direct 3-Dimenstional information about the location of the defect. Super-conducting Quantum Interference Device (SQUID) Microscope is useful in localizing shorts in packages [2]. SQUID microscope can localize defects to within 5um in the X and Y directions and 35um in the Z direction. This accuracy is valuable in precise localization of the failsite within the die, package or the interfacial region in flipchip assemblies.

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