Leaky Device Channel Anomaly Identification and Case Study by Nano-Probing Technique, Curve Fitting, and Model Analysis
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Abstract This paper demonstrated the use of curve fitting method on device transfer characteristic curve for device carrier mobility analysis and failure mechanism verification. In the content, a systematic device characterization was performed to identify device failure mode and failure site. Based on physical observations and electrical results, a device gate oxide boron penetration failure mechanism and an unexpected subtle p-type dopant at p-MOS device channel area was conjectured. However, this unexpected p-type dopant was successfully proved by subsequent carrier mobility analysis results, and the gate oxide boron penetration failure mechanism was accordingly verified.
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1993 ◽
Vol 272
(1)
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pp. 125-134
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2007 ◽
Vol 46
(13)
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pp. 4549-4560
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2016 ◽
Vol 24
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pp. 4604-4610
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2015 ◽
Vol 3
(6)
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pp. 229-251
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2012 ◽
pp. 295-299
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