Photon Emission Microscope as a Tool for 3-Dimensional Semiconductor Device Failure Analysis
Keyword(s):
Abstract A three dimensional (3-D) photon emission failure analysis method has been developed to pinpoint failure sites or emission sites on the x, y, and z planes of a degraded diode. The 3-D analysis consists of a cross-sectioning step process on two adjacent sides of a diode utilizing two photon emission sites from respective sides of the die as a map. This process negates the uncertainty and long processing times during cross-sectional analysis to find minute defects in diodes.
2000 ◽
Vol 109
(5)
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pp. 505-513
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2020 ◽
Vol 29
(1)
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pp. 93-101
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Keyword(s):
2014 ◽
Vol 620
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pp. 69-74