Evaluation of Power SiC-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy—Imaging of Carrier Distribution and Depletion Layer

2014 ◽  
Author(s):  
N. Chinone ◽  
Y. Cho ◽  
T. Nakamura
Keyword(s):  
Semiconductor Device ◽  
Low Cost ◽  
Semiconductor Devices ◽  
Higher Order ◽  
Depletion Layer ◽  
Dopant Distribution ◽  
Carrier Distribution ◽  
Microscopy Imaging ◽  
Nonlinear Dielectric ◽  
Power Semiconductor

Abstract Evaluation techniques for semiconductor devices are keys for device development with low cost and short time to market. Especially, dopant and depletion layer distribution in devices is a critical electrical property that needs to be evaluated. Super-higher-order nonlinear dielectric microscopy (SHOSNDM) is one of the promising techniques for semiconductor device evaluation. We developed a method for imaging detailed dopant distribution and depletion layers in semiconductor devices using SHO-SNDM. As a demonstration, a cross-section of a SiC power semiconductor device was measured by this method and detailed dopant distribution and depletion layer distributions were imaged.

Carrier Redistribution Analysis of Gate-Biased SiC Power-MOSFET Using Super-Higher-Order Scanning Nonlinear Dielectric Microscopy

2015 ◽  
Author(s):  
Norimichi Chinone ◽  
Yasuo Cho
Keyword(s):  
Cross Section ◽  
Measurement System ◽  
Higher Order ◽  
Depletion Layer ◽  
Gate Bias ◽  
Power Mosfet ◽  
Nonlinear Dielectric ◽  
Voltage Dependent ◽  
Carrier Redistribution ◽  
Source Voltage

Abstract Gate-bias dependent depletion layer distribution and carrier distributions in cross-section of SiC power MOSFET were measured by newly developed measurement system based on super-higher-order scanning nonlinear dielectric microscope. The results visualized gate-source voltage dependent redistribution of depletion layer and carrier.

scholarly journals Non-Dissipative Snubber Circuit Based SEPIC Converter for High Static Gain Applications

2020 ◽  
Vol 8 (6) ◽  
pp. 754-757
Keyword(s):  
High Efficiency ◽  
Semiconductor Device ◽  
Semiconductor Devices ◽  
Sudden Change ◽  
The Other ◽  
Efficient Operation ◽  
Power Semiconductor ◽  
Turn On ◽  
Power Semiconductor Devices ◽  
Snubber Circuit

In this paper different non-dissipative snubber circuits in which RCD snubber circuit, CD snubber circuit, LCD snubber circuit and proposed LCD snubber circuit are implemented in SEPIC converter to obtain high static gain. The snubber circuit is used for the protection of the power semiconductor devices. The requirement of high static gain is necessary in different applications of dc-dc converters, so that efficient operation of the system can be obtained. The basic idea of the snubber circuit used in this paper is to reduce the turn-on and turn-off losses at the time of switching processes. For this purpose, inductor and capacitor combination is required so that during turn-on process, sudden change in current through semiconductor device which is used as a switch, can be reduced. Similarly, during turn-off process, sudden change in voltage across switch can be minimized. Here, different snubber circuit based SEPIC converters are analyzed with the help of MATLAB simulink and results of output voltages and currents are obtained. The results are summarized which clearly shows that the proposed SEPIC converter has high static gain in comparison of the others topologies. Hence non-dissipative snubber circuit based SEPIC converter provides high efficiency than the other modifications in SEPIC converter.

High-Accuracy Fatigue Evaluation of Power Devices by Multi-Coupled Analysis

2009 ◽  
Author(s):  
Kazunori Shinohara ◽  
Qiang Yu ◽  
Takashi Anzawa ◽  
Hideaki Ishii
Keyword(s):  
Semiconductor Device ◽  
Semiconductor Devices ◽  
High Accuracy ◽  
Hybrid Vehicles ◽  
Coupled Analysis ◽  
Power Devices ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Fatigue Evaluation

To calculate power semiconductor device fatigue with high accuracy, multiphysics analysis comprising electrical, heat, and stress analyses is presented. Power semiconductor devices (e.g., IGBTs) have been widely used in various applications. In particularly, the power semiconductor device (IGBT) becomes important component in vehicle applications. There is a high demand for compact and high-power capacity next-generation vehicles such as electric vehicles and hybrid vehicles. However, it causes the problem such as thermal stress. The reliability of power semiconductor devices has to be investigated by carrying out highly accurate simulations before developing IGBTs. In this paper, the electrical conductivity in silicon (IGBT) is considered as the material parameter. The semiconductor resistance is calculated by voltage distributions in the semiconductor. Comparing the conductivity constant case with the conductivity variation case, we examine the effects of the electrical characteristics of the semiconductor on fatigue.

Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

2014 ◽  
Vol 134 (6) ◽  
pp. 432-433
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Keisuke Yamashiro ◽  
Yuji Hayase ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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