Strategies to Address Low DPPM Failure Mechanisms on Automotive Grade Wi-Fi Radio Frequency Devices

2015 ◽  
Author(s):  
Kai Wang ◽  
Sadia Lone ◽  
Colin Thomas ◽  
Rhys Weaver
Keyword(s):  
Failure Analysis ◽  
Continuous Improvement ◽  
Failure Mechanisms ◽  
Time Frame ◽  
Cause Analysis ◽  
Automotive Market ◽  
Root Cause ◽  
Rigorous Testing ◽  
Additional Demand

Abstract System suppliers in the automotive market have an expectation that their IC suppliers provide products with low defective parts per million (DPPM) and have methodologies in place to drive towards 0ppm (Zero Parts Per Million). IC suppliers to the automotive market have supply chains and test methodologies in place to achieve such low DPPMs, but the systems suppliers will still require root cause analysis on every failure. The IC supplier is expected to demonstrate a containment, corrective action and continuous improvement in a very tight time frame. This additional demand of automotive customers poses a challenge to the quality of IC devices and the concept of cross departmental failure analysis. In this paper, we look at a complex Wi-Fi design with multiple IEEE specific radios, and how to address the few parts that escape the rigorous testing by IC supplier to improve the quality for the automotive IC.

Root Cause Analysis for Pin Leakage

2016 ◽  
Author(s):  
Zhigang Song ◽  
Jochonia Nxumalo ◽  
Manuel Villalobos ◽  
Sweta Pendyala
Keyword(s):  
Failure Analysis ◽  
Root Cause Analysis ◽  
Advanced Technology ◽  
Process Step ◽  
Cause Analysis ◽  
Hard Mask ◽  
Technology Node ◽  
Root Cause ◽  
Tools And Techniques

Abstract Pin leakage continues to be on the list of top yield detractors for microelectronics devices. It is simply manifested as elevated current with one pin or several pins during pin continuity test. Although many techniques are capable to globally localize the fault of pin leakage, root cause analysis and identification for it are still very challenging with today’s advanced failure analysis tools and techniques. It is because pin leakage can be caused by any type of defect, at any layer in the device and at any process step. This paper presents a case study to demonstrate how to combine multiple techniques to accurately identify the root cause of a pin leakage issue for a device manufactured using advanced technology node. The root cause was identified as under-etch issue during P+ implantation hard mask opening for ESD protection diode, causing P+ implantation missing, which was responsible for the nearly ohmic type pin leakage.

scholarly journals Why Do Patients Leave against Medical Advice? Reasons, Consequences, Prevention, and Interventions

Healthcare ◽  
2021 ◽  
Vol 9 (2) ◽  
pp. 111
Author(s):  
Asseel Albayati ◽  
Steven Douedi ◽  
Abbas Alshami ◽  
Mohammad A. Hossain ◽  
Shuvendu Sen ◽  
...  
Keyword(s):  
Hospital Admissions ◽  
Medical Advice ◽  
Preventive Strategies ◽  
Against Medical Advice ◽  
Cause Analysis ◽  
Persistent Problem ◽  
Root Cause ◽  
Discharge Against Medical Advice ◽  
Leaving Against Medical Advice

Background: A patient decides to leave the hospital against medical advice. Is this an erratic eccentric behavior of the patient, or a gap in the quality of care provided by the hospital? With a significant and increasing prevalence of up to 1–2% of all hospital admissions, leaving against medical advice affects both the patient and the healthcare provider. We hereby explore this persistent problem in the healthcare system. We searched Medline and PubMed within the last 10 years, using the keywords “discharge against medical advice,” “DAMA,” “leave against medical advice,” and “AMA.” We retrospectively reviewed 49 articles in our project. Ishikawa fishbone root cause analysis (RCA) was employed to explore reasons for leaving against medical advice (AMA). This report presents the results of the RCA and highlights the consequences of discharge against medical advice (DAMA). In addition, the article explores preventive strategies, as well as interventions to ameliorate leaving AMA.

An Application of Breakthrough Failure Analysis Techniques in Eliminating Silicon Dislocation Problem in Sub-Micron CMOS Devices

1997 ◽  
Author(s):  
E. H. Yeoh ◽  
W. M. Mak ◽  
H. C. Lock ◽  
S. K. Sim ◽  
C. C. Ooi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Packing Density ◽  
Failure Mechanisms ◽  
Potential Solution ◽  
Critical Dimensions ◽  
Functional Failure ◽  
Analysis Techniques ◽  
Root Cause ◽  
First Time

Abstract As device interconnect layers increase and transistor critical dimensions decrease below sub-micron to cater for higher speed and higher packing density, various new and subtle failure mechanisms have emerged and are becoming increasingly prevalent. Silicon dislocation is a new failure mechanism that falls in this category and was for the first time, uncovered in submicron multilayered CMOS devices. This mechanism was responsible for a systematic yield problem; identified as the 'centre GFA wafer' functional failure problem. In this paper, several breakthrough failure analysis techniques used to narrow down and identify this new mechanism will be presented. Root cause determination and potential solution to this problem will also be discussed.

Tri-Directional TEM Failure Analysis on Sample Prepared by In-Situ Lift-Out FIB and Flipstage

2014 ◽  
Author(s):  
Jie Zhu ◽  
An Yan Du ◽  
Bing Hai Liu ◽  
Eddie Er ◽  
Si Ping Zhao ◽  
...  
Keyword(s):  
Sample Preparation ◽  
Failure Analysis ◽  
Cross Section ◽  
Root Cause Analysis ◽  
Wafer Surface ◽  
Tem Analysis ◽  
Cause Analysis ◽  
Root Cause

Abstract In this paper, we report an advanced sample preparation methodology using in-situ lift-out FIB and Flipstage for tridirectional TEM failure analysis. A planar-view and two cross-section TEM samples were prepared from the same target. Firstly, a planar-view lamellar parallel to the wafer surface was prepared using in-situ lift-out FIB milling. Upon TEM analysis, the planar sample was further milled in the along-gate and cross-gate directions separately. Eventually, a pillar-like sample containing a single transistor gate was obtained. Using this technique, we are able to analyze the defect from three perpendicular directions and obtain more information on the defect for failure root-cause analysis. A MOSFETs case study is described to demonstrate the procedure and advantages of this technique.

Challenges of System Level Failure Analysis of Electronics in the Automotive Industry

2017 ◽  
Author(s):  
Bence Hevesi
Keyword(s):  
Failure Analysis ◽  
Case Studies ◽  
Automotive Industry ◽  
Root Cause Analysis ◽  
Fault Isolation ◽  
System Level ◽  
Cause Analysis ◽  
Root Cause ◽  
Analysis Workflow

Abstract In this paper, different failure analysis (FA) workflows are showed which combines different FA approaches for fast and efficient fault isolation and root cause analysis in system level products. Two case studies will be presented to show the importance of a well-adjusted failure analysis workflow.

Failures in Soldering

2021 ◽  
pp. 326-337
Author(s):  
Qiming Zhang ◽  
Babak Kondori ◽  
Xing Qiu ◽  
Jeffry C.C. Lo ◽  
S.W. Ricky Lee
Keyword(s):  
Solder Joint ◽  
Failure Analysis ◽  
Manufacturing Process ◽  
Failure Modes ◽  
Solder Joints ◽  
Failure Detection ◽  
Cause Analysis ◽  
Root Cause ◽  
Integration Density ◽  
Root Cause Failure Analysis

Abstract Due to the recent requirement of higher integration density, solder joints are getting smaller in electronic product assemblies, which makes the joints more vulnerable to failure. Thus, the root-cause failure analysis for the solder joints becomes important to prevent failure at the assembly level. This article covers the properties of solder alloys and the corresponding intermetallic compounds. It includes the dominant failure modes introduced during the solder joint manufacturing process and in field-use applications. The corresponding failure mechanism and root-cause analysis are also presented. The article introduces several frequently used methods for solder joint failure detection, prevention, and isolation (identification for the failed location).

scholarly journals Root-Cause Analysis of Persistently High Maternal Mortality in a Rural District of Indonesia: Role of Clinical Care Quality and Health Services Organizational Factors

2018 ◽  
Vol 2018 ◽  
pp. 1-11 ◽  
Author(s):  
Mohammad Afzal Mahmood ◽  
Ismi Mufidah ◽  
Steven Scroggs ◽  
Amna Rehana Siddiqui ◽  
Hafsa Raheel ◽  
...  
Keyword(s):  
Quality Of Care ◽  
Maternal Mortality ◽  
Clinical Care ◽  
Organizational Factors ◽  
Root Cause Analysis ◽  
Care Quality ◽  
Cause Analysis ◽  
Root Cause ◽  
Essential Services

Background. Despite significant reduction in maternal mortality, there are still many regions in the world that suffer from high mortality. District Kutai Kartanegara, Indonesia, is one such region where consistently high maternal mortality was observed despite high rate of delivery by skilled birth attendants. Method. Thirty maternal deaths were reviewed using verbal autopsy interviews, terminal event reporting, medical records’ review, and Death Audit Committee reports, using a comprehensive root-cause analysis framework including Risk Identification, Signal Services, Emergency Obstetrics Care Evaluation, Quality, and 3 Delays. Findings. The root causes were found in poor quality of care, which caused hospital to be unprepared to manage deteriorating patients. In hospital, poor implementation of standard operating procedures was rooted in inadequate skills, lack of forward planning, ineffective communication, and unavailability of essential services. In primary care, root causes included inadequate risk management, referrals to facilities where needed services are not available, and lack of coordination between primary healthcare and hospitals. Conclusion. There is an urgent need for a shift in focus to quality of care through knowledge, skills, and support for consistent application of protocols, making essential services available, effective risk assessment and management, and facilitating timely referrals to facilities that are adequately equipped.

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