Fault Isolation of DQ Failures in 14 nm SRAM Using Laser Voltage Imaging and Probing
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Abstract Through custom test pattern generation and SRAM design analysis, we present the first demonstration of Laser Voltage Imaging (LVI) and Probing (LVP) for the successful fault isolation and physical analysis of DQ failures within a 14nm SRAM macro. These findings revealed the fail site to reside within the I/O circuitry of the associated failing pin, a previously overlooked location as common block failures are typically associated with physical anomalies within the SRAM periphery.
1991 ◽
Vol 138
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pp. 179
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International Journal of Advanced Research in Electrical Electronics and Instrumentation Engineering
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2014 ◽
Vol 03
(08)
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pp. 11487-11495
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2016 ◽
Vol 6
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pp. 51
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1993 ◽
Vol 38
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pp. 715-722
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2017 ◽
pp. 176-182
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