scholarly journals In-Situ Monitoring of Micro-Chemical Vapor Deposition (µ-CVD): Experimental Results and Spice Modeling

1998 ◽  
Author(s):  
R.P. Manginell ◽  
J.H. Smith ◽  
A.J. Ricco ◽  
R.C. Hughes ◽  
R. Huber ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Experimental Results ◽  
In Situ Monitoring

In Situ Monitoring of Al Growth in Chemical Vapor Deposition by Detecting Reflected Laser Light Intensity

1995 ◽  
Vol 34 (Part 2, No. 4A) ◽  
pp. L429-L432 ◽  
Author(s):  
Kazumi Sugai ◽  
Hidekazu Okabayashi ◽  
AkikoKobayashi ◽  
Tadaaki Yako ◽  
ShunjiKishida
Keyword(s):  
Chemical Vapor Deposition ◽  
Light Intensity ◽  
Vapor Deposition ◽  
Laser Light ◽  
Chemical Vapor ◽  
In Situ Monitoring

scholarly journals Non-classical nucleation in vapor–liquid–solid growth of monolayer WS2 revealed by in-situ monitoring chemical vapor deposition

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Xiaoming Qiang ◽  
Yuta Iwamoto ◽  
Aoi Watanabe ◽  
Tomoya Kameyama ◽  
Xing He ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Rapid Growth ◽  
Growth Dynamics ◽  
Chemical Vapor ◽  
In Situ Monitoring ◽  
Vapor Liquid Solid ◽  
Crystal Anisotropy ◽  
Vls Growth

AbstractThe very early nucleation stage of a transition metal dichalcogenide (TMD) was directly observed with in-situ monitoring of chemical vapor deposition and automated image analysis. Unique nucleation dynamics, such as very large critical nuclei and slow to rapid growth transitions, were observed during the vapor–liquid–solid (VLS) growth of monolayer tungsten disulfide (WS2). This can be explained by two-step nucleation, also known as non-classical nucleation, in which metastable clusters are formed through the aggregation of droplets. Subsequently, nucleation of solid WS2 takes place inside the metastable cluster. Furthermore, the detailed nucleation dynamics was systematically investigated from a thermodynamic point of view, revealing that the incubation time of metastable cluster formation follows the traditional time–temperature transformation diagram. Quantitative phase field simulation, combined with Bayesian inference, was conducted to extract quantitative information on the growth dynamics and crystal anisotropy from in-situ images. A clear transition in growth dynamics and crystal anisotropy between the slow and rapid growth phases was quantitatively verified. This observation supports the existence of two-step nucleation in the VLS growth of WS2. Such detailed understanding of TMD nucleation dynamics can be useful for achieving perfect structure control of TMDs.

In situ monitoring of the electrical property of carbon nanotube thin film in floating catalyst chemical vapor deposition

2022 ◽  
Author(s):  
Hisayoshi Oshima ◽  
katsunori iwase ◽  
Yutaka Ohno
Keyword(s):  
Chemical Vapor Deposition ◽  
Carbon Nanotube ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Circuit Simulation ◽  
Chemical Vapor ◽  
Electrical Circuit ◽  
In Situ Monitoring ◽  
Catalyst Chemical Vapor Deposition

Abstract In floating catalyst chemical vapor deposition (FCCVD), when a carbon nanotube (CNT) network film is produced by filter collection, the film thickness is adjusted by controlling the collection time. However, even with consistent synthesis parameters, the synthesis condition in FCCVD changes constantly depending on the carbon and catalyst adhesion to the inner wall of the reaction tube. Thus, the rate of synthesis changes, making it difficult to obtain the target film thickness repeatedly and stably. We propose a method of monitoring CNT film thickness and percolation threshold by the in situ measurement of the electrical impedance during the deposition. The time evolution of the measured impedance is reproducible by an equivalent electrical circuit simulation.

In situ study of electron beam-induced chemical vapor deposition of Au in an environmental TEM

1995 ◽  
Vol 53 ◽  
pp. 256-257
Author(s):  
J. Drucker ◽  
R. Sharma ◽  
J. Kouvetakis ◽  
K.H.J. Weiss
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Quantum Effect ◽  
Line Drawing ◽  
Chemical Vapor ◽  
Environmental Cell ◽  
Engineering Changes ◽  
Kinetics Of

Patterning of metals is a key element in the fabrication of integrated microelectronics. For circuit repair and engineering changes constructive lithography, writing techniques, based on electron, ion or photon beam-induced decomposition of precursor molecule and its deposition on top of a structure have gained wide acceptance Recently, scanning probe techniques have been used for line drawing and wire growth of W on a silicon substrate for quantum effect devices. The kinetics of electron beam induced W deposition from WF6 gas has been studied by adsorbing the gas on SiO2 surface and measuring the growth in a TEM for various exposure times. Our environmental cell allows us to control not only electron exposure time but also the gas pressure flow and the temperature. We have studied the growth kinetics of Au Chemical vapor deposition (CVD), in situ, at different temperatures with/without the electron beam on highly clean Si surfaces in an environmental cell fitted inside a TEM column.

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