Fabrication and characterization of polymer based metal-oxide-semiconductor and non-volatile memory devices

Mapping Intimacies ◽

10.32469/10355/9886 ◽

2009 ◽

Author(s):

Minseong Yun

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Memory Devices ◽

Non Volatile Memory ◽

Fabrication And Characterization ◽

Volatile Memory

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Fabrication and Characterization of 1700 V 4H-SiC Vertical Double-Implanted Metal-Oxide-Semiconductor Field-Effect Transistors

Chinese Physics Letters ◽

10.1088/0256-307x/32/12/127101 ◽

2015 ◽

Vol 32 (12) ◽

pp. 127101 ◽

Author(s):

Hua-Jun Shen ◽

Ya-Chao Tang ◽

Zhao-Yang Peng ◽

Xiao-Chuan Deng ◽

Yun Bai ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Fabrication and characterization of vertical-type double-gate metal-oxide-semiconductor field-effect transistor with ultrathin Si channel and self-aligned source and drain

Applied Physics Letters ◽

10.1063/1.2173715 ◽

2006 ◽

Vol 88 (7) ◽

pp. 072103 ◽

Author(s):

Meishoku Masahara ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Takashi Matsukawa ◽

Kunihiro Sakamoto ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Effect Transistor ◽

Fabrication And Characterization

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Fabrication and characterization of a silicon metal-oxide-semiconductor based triple quantum dot

Applied Physics Letters ◽

10.1063/1.4731275 ◽

2012 ◽

Vol 100 (26) ◽

pp. 263109 ◽

Author(s):

H. Pan ◽

M. G. House ◽

X. Hao ◽

H. W. Jiang

Keyword(s):

Quantum Dot ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Low temperature fabrication and characterization of nickel germanide Schottky source/drain contacts for implant-less germanium p-channel metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4712564 ◽

2012 ◽

Vol 100 (19) ◽

pp. 192101 ◽

Author(s):

D. R. Gajula ◽

D. W. McNeill ◽

B. E. Coss ◽

H. Dong ◽

S. Jandhyala ◽

...

Keyword(s):

Low Temperature ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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Fabrication and Characterization of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-based Micro pH Sensor

2020 Medical Technologies Congress (TIPTEKNO) ◽

10.1109/tiptekno50054.2020.9299291 ◽

2020 ◽

Author(s):

Fikri Seven ◽

ve Mustafa Sen

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Ph Sensor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fabrication And Characterization

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Metal-oxide-semiconductor diodes containing C60 fullerenes for non-volatile memory applications

Journal of Applied Physics ◽

10.1063/1.4789614 ◽

2013 ◽

Vol 113 (4) ◽

pp. 044520 ◽

Author(s):

Daniel Beckmeier ◽

Hermann Baumgärtner

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Non Volatile Memory ◽

Volatile Memory ◽

Memory Applications ◽

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Fabrication and Characterization of CdF2/CaF2 Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures

10.7567/ssdm.2008.h-9-3 ◽

2008 ◽

Author(s):

M. Watanabe ◽

T. Wada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Floating Gate ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fabrication And Characterization

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Fabrication and characterization of metal-oxide-semiconductor GaAs capacitors on Ge∕Si[sub 1−x]Ge[sub x]∕Si substrates with Al[sub 2]O[sub 3] gate dielectric

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.2835061 ◽

2008 ◽

Vol 26 (3) ◽

pp. 1182 ◽

Author(s):

D. Shahrjerdi ◽

N. Nuntawong ◽

G. Balakrishnan ◽

D. I. Garcia-Gutierrez ◽

A. Khoshakhlagh ◽

...

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Substrates ◽

Fabrication And Characterization

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Electrical Characterization of Metal–Oxide–Semiconductor Memory Devices with High-Density Self-Assembled Tungsten Nanodots

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2680 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2680-2683 ◽

Author(s):

Yan-Li Pei ◽

Takafumi Fukushima ◽

Tetsu Tanaka ◽

Mitsumasa Koyanagi

Keyword(s):

Metal Oxide ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

High Density ◽

Oxide Semiconductor ◽

Memory Devices ◽

Semiconductor Memory ◽

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Fabrication and characterization of the normally-off N-channel lateral 4H–SiC metal–oxide–semiconductor field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/25/3/037306 ◽

2016 ◽

Vol 25 (3) ◽

pp. 037306

Author(s):

Qing-Wen Song ◽

Xiao-Yan Tang ◽

Yan-Jing He ◽

Guan-Nan Tang ◽

Yue-Hu Wang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Fabrication And Characterization

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