Application Of The Sah-noyce-shockley Recombination Mechanism To The Model Of The Voltagecurrent Relationship Of Led Structures With Quantum Wells

2020 ◽  
pp. 31-38
Author(s):  
Fedor I. Manyakhin ◽  
Arthur B. Vattana ◽  
Lyudmila O. Mokretsova
Keyword(s):  
Space Charge ◽  
Quantum Wells ◽  
Bias Voltage ◽  
Space Charge Region ◽  
Mathematic Model ◽  
Continuous Series ◽  
Recombination Mechanism ◽  
Light Emitting ◽  
Proposed Model ◽  
Relationship Of

The Sah-Noyce-Shockley (SNS) space charge region recombination theory is applied to build the mathematic model of the voltage-current relationships (VCR) of light emitting diodes with quantum wells. Unlike the mathematic model of VCR, for SNS in the proposed model, non-uniformity of recombination centres distribution over the space charge region and dependence of their mean concentration on voltage are assumed as well as the fact that the nonideality factor of forward current dependence on bias voltage may have a continuous series of values from 1 to 5 and is defined by the dependence on bias voltage of both saturation current and exponent of the VCR mathematical model.

scholarly journals Токовый шум и падение эффективности светодиодов при туннелировании носителей из квантовой ямы InGaN/GaN с участием дефектов

2019 ◽  
Vol 53 (1) ◽  
pp. 104
Author(s):  
Н.И. Бочкарева ◽  
А.М. Иванов ◽  
А.В. Клочков ◽  
Ю.Г. Шретер
Keyword(s):  
Space Charge ◽  
Quantum Wells ◽  
Quantum Efficiency ◽  
Space Charge Region ◽  
Noise Level ◽  
Efficiency Droop ◽  
Experimental Frequency ◽  
Light Emitting ◽  
Thermally Activated ◽  
Electric Field Direction

AbstractThe current dependences of the spectral noise density and quantum efficiency in green and blue light-emitting diodes with InGaN/GaN quantum wells (QWs) are measured. It is shown that the noise level greatly increases at high currents at which there is a quantum efficiency droop. The mechanism by which the current noise is formed is associated with hopping transport via the deep states of color centers in GaN across the n barrier of an InGaN/GaN QW. The source of the noise is the hopping resistance of the space-charge region, which limits the current of thermally activated electrons into the QW. The efficiency droop and the increase in noise level are attributed to a change in the electric-field direction near the QW at high injection levels and to an increase in the tunneling leakage of holes from the QW. It is shown that the experimental frequency-related noise spectra having the shape of a Lorentzian spectrum at the working currents are related to the frequency of hopping between deep centers near the InGaN/GaN QW and to Maxwell relaxation in the space-charge region.

Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments

2001 ◽  
Vol 693 ◽  
Author(s):  
J. Kim ◽  
B. Luo ◽  
R. Mehandru ◽  
F. Ren ◽  
K. P. Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Space Charge ◽  
Plasma Treatment ◽  
Space Charge Region ◽  
Forward Direction ◽  
Deuterium Plasma ◽  
Light Emitting ◽  
Plasma Treatments ◽  
Forward Current ◽  
Heterojunction Diodes

AbstractEffects of UV/O3 or deuterium plasma treatment, of annealing in air at 550°C, of annealing in N2 at 500°C and various combinations of these treatments on leakage current and resistance in the forward direction of GaN/InGaN multiquantum-well light emitting diodes MQW LEDs were studied. It was shown that the best results are achieved with 5 minutes long UV/O3 treatment. LED structures thus prepared showed effects of strong tunneling in their I-V characteristics. The space charge region was shown to be located in the GaN/InGaN superlattice SL. Passing of moderately high forward current through the structure for several hours enhanced the overall tunneling through the structure and facilitated faster tunneling between the layers in the GaN/InGaN SL.

Effect of Space Charge Region Width on Er-Related Luminescence in Reverse Biased Si:Er-Based Light Emitting Diodes

2006 ◽  
Vol 12 (6) ◽  
pp. 1556-1560 ◽  
Author(s):  
Viacheslav B. Shmagin ◽  
Sergey V. Obolensky ◽  
Dmitry Yu. Remizov ◽  
Viktor P. Kuznetsov ◽  
Zakhary F. Krasilnik
Keyword(s):  
Space Charge ◽  
Space Charge Region ◽  
Light Emitting Diodes ◽  
Light Emitting

scholarly journals Dependence of aging on inhomogeneities in InGaN/AlGaN/GaN light-emitting diodes

2000 ◽  
Vol 5 (S1) ◽  
pp. 668-674
Author(s):  
V.E. Kudryashov ◽  
S.S. Mamakin ◽  
A.N. Turkin ◽  
A.E. Yunovich ◽  
A.N. Kovalev ◽  
...  
Keyword(s):  
Space Charge ◽  
Quantum Efficiency ◽  
Space Charge Region ◽  
Radiation Intensity ◽  
Light Emitting Diodes ◽  
Reverse Current ◽  
Spectral Parameters ◽  
Light Emitting ◽  
Potential Fluctuations ◽  
Normal Currents

Changes of properties of green LEDs based on InxGa1−xN/AlyGa1−y/GaN heterostructures were studied during 150÷200 hours at currents J = 30÷ 80 MA The radiation intensity at low currents (0.1÷1 mA) is quite sensitive to such an aging, it falls down 10÷100 times. Quantum efficiency and spectral parameters at normal currents (J ≈ 10 mA) change non-monotonically during aging, some degradation is observed after 168 hours. The degradation is observed also after a short (< 1 min) period of reverse current. These phenomena are discussed in terms of under threshold defect’s formation and their migration in the space charge region of p-n-heterojunction. Potential fluctuations in the space charge region are quite sensitive to this process.

Solar Cells prepared with Spray-ILGAR Indium Sulfide buffer layers on Cu(In,Ga)Se2 Absorbers

2005 ◽  
Vol 865 ◽  
Author(s):  
Nicholas A. Allsop ◽  
Christian A. Kaufmann ◽  
Axel Neisser ◽  
Marin Rusu ◽  
Andreas Hänsel ◽  
...  
Keyword(s):  
Activation Energy ◽  
Solar Cells ◽  
Space Charge ◽  
Cadmium Sulfide ◽  
Space Charge Region ◽  
Buffer Layers ◽  
Indium Sulfide ◽  
Recombination Mechanism ◽  
Current Voltage ◽  
First Results

AbstractIndium sulfide buffer layers deposited by the Spray-Ion Layer Gas Reaction (Spray-ILGAR) technique have recently been used with Cu(In,Ga)(S,Se)2 absorbers giving cells with an efficiency equal to the cadmium sulfide references. In this paper we show the first results from cells prepared with Cu(In,Ga)Se2 absorbers (sulfur free). These cells reach an efficiency of 13.1% which remains slightly below the efficiency of the cadmium sulfide reference. However, temperature dependant current-voltage measurements reveal that the activation energy of the dominant recombination mechanism remains unchanged from the cadmium sulfide buffered cells indicating that recombination remains within the space charge region.

Dependence of Aging on Inhomogeneities in InGaN/AlGaN/GaN Light-Emitting Diodes

1999 ◽  
Vol 595 ◽  
Author(s):  
V.E. Kudryashov ◽  
S.S. Mamakin ◽  
A.N. Turkin ◽  
A.E. Yunovich ◽  
A.N. Kovalev ◽  
...  
Keyword(s):  
Space Charge ◽  
Quantum Efficiency ◽  
Space Charge Region ◽  
Radiation Intensity ◽  
Light Emitting Diodes ◽  
Reverse Current ◽  
Spectral Parameters ◽  
Light Emitting ◽  
Potential Fluctuations ◽  
Normal Currents

AbstractChanges of properties of green LEDs based on InxGa1-xN/AlyGa1-y/GaN heterostructures were studied during 150÷200 hours at currents J = 30÷80 mA. The radiation intensity at low currents (0.1÷1 mA) is quite sensitive to such an aging, it falls down 10÷100 times. Quantum efficiency and spectral parameters at normal currents (J ≈ 10 mA) change non-monotonically during aging, some degradation is observed after 168 hours. The degradation is observed also after a short (< 1 min) period of reverse current. These phenomena are discussed in terms of under threshold defect's formation and their migration in the space charge region of p-n-heterojunction. Potential fluctuations in the space charge region are quite sensitive to this process.

Effect of Carrier Recombination Mechanism on Modulation Bandwidth of InGaN Multiple-quantum-wells Blue Light Emitting Diodes

2018 ◽  
Vol 39 (2) ◽  
pp. 202-207
Author(s):  
杨杰 YANG Jie ◽  
朱邵歆 ZHU Shao-xin ◽  
闫建昌 YAN Jian-chang ◽  
李晋闽 LI Jin-min ◽  
王军喜 WANG Jun-xi
Keyword(s):  
Quantum Wells ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Modulation Bandwidth ◽  
Recombination Mechanism ◽  
Light Emitting ◽  
Carrier Recombination

scholarly journals Влияние глубоких центров на конфайнмент носителей в квантовых ямах InGaN/GaN и эффективность светодиодов

2018 ◽  
Vol 52 (7) ◽  
pp. 796
Author(s):  
Н.И. Бочкарева ◽  
Ю.Г. Шретер
Keyword(s):  
Energy Spectrum ◽  
Quantum Wells ◽  
Forward Bias ◽  
Band Bending ◽  
Effective Height ◽  
Light Emitting ◽  
Quasi Fermi Level ◽  
Proposed Model ◽  
Low Efficiency ◽  
Injection Barrier

AbstractThe deep-center-assisted tunneling of carriers in p–n structures of light-emitting diodes (LEDs) with InGaN/GaN quantum wells (QWs) makes smaller the effective height of the injection barrier, but leads to a dependence of the radiation efficiency on the density and energy spectrum of defects in GaN. In the case of hopping conduction across the space charge region, the forward voltage mainly drops near the QW boundary, where the density of deep states at the quasi Fermi-level is the lowest. As a result, band bending at the boundary decreases, and, with increasing current, the direction of the electric field also changes, which leads to a weaker confinement of holes, to their non-radiative recombination in the n barrier, and to an efficiency droop. The low efficiency of green GaN LEDs is associated with the dominance of deep centers and insufficient density of shallow centers in the energy spectrum of defects in barrier layers near the boundaries with the QW. The proposed model is confirmed by the stepwise experimental dependences of the current, capacitance and efficiency of green and blue LEDs in the case of forward bias, which reflect the contribution of color centers responsible for the defect photoluminescence bands in GaN.

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