OBTAINING THIN FILMS OF SOLID SOLUTIONS CUIN0.75GA0.25SE2 AND AG0.5CU0.5INSE2 BY THE METHOD OF A MAGNETRON AND EXPLOSIVE EVAPORATION

Author(s):  
M. A. Abdullaev ◽  
2019 ◽  
Vol 822 ◽  
pp. 795-800
Author(s):  
G.D. Khavrov ◽  
V.V. Kaminski ◽  
N.V. Sharenkova ◽  
A.A. Vinogradov

In this work, the fulfillment of Vegard's law in thin polycrystalline films Sm1-xGdxS and Sm1-xEuxS, obtained by the method of explosive evaporation of the powder in vacuum, is investigated. It is shown that compliance with the Vegard law in the manufacture of thin-film structures based on Sm1-xEuxS solid solutions is possible only with the same technological parameters of film deposition, in particular, the substrate temperature. In the case of the Sm1-xGdxS solid solutions, the law is observed only in the metal phase of the solid solutions, with x> 0.12.


2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Hendrik Wulfmeier ◽  
Dhyan Kohlmann ◽  
Thomas Defferriere ◽  
Carsten Steiner ◽  
Ralf Moos ◽  
...  

Abstract The chemical expansion of Pr0.1Ce0.9O2–δ (PCO) and CeO2–δ thin films is investigated in the temperature range between 600 °C and 800 °C by laser Doppler vibrometry (LDV). It enables non-contact determination of nanometer scale changes in film thickness at high temperatures. The present study is the first systematic and detailed investigation of chemical expansion of doped and undoped ceria thin films at temperatures above 650 °C. The thin films were deposited on yttria stabilized zirconia substrates (YSZ), operated as an electrochemical oxygen pump, to periodically adjust the oxygen activity in the films, leading to reversible expansion and contraction of the film. This further leads to stresses in the underlying YSZ substrates, accompanied by bending of the overall devices. Film thickness changes and sample bending are found to reach up to 10 and several hundred nanometers, respectively, at excitation frequencies from 0.1 to 10 Hz and applied voltages from 0–0.75 V for PCO and 0–1 V for ceria. At low frequencies, equilibrium conditions are approached. As a consequence maximum thin-film expansion of PCO is expected due to full reduction of the Pr ions. The lower detection limit for displacements is found to be in the subnanometer range. At 800 °C and an excitation frequency of 1 Hz, the LDV shows a remarkable resolution of 0.3 nm which allows, for example, the characterization of materials with small levels of expansion, such as undoped ceria at high oxygen partial pressure. As the correlation between film expansion and sample bending is obtained through this study, a dimensional change of a free body consisting of the same material can be calculated using the high resolution characteristics of this system. A minimum detectable dimensional change of 5 pm is estimated even under challenging high-temperature conditions at 800 °C opening up opportunities to investigate electro-chemo-mechanical phenomena heretofore impossible to investigate. The expansion data are correlated with previous results on the oxygen nonstoichiometry of PCO thin films, and a defect model for bulk ceria solid solutions is adopted to calculate the cation and anion radii changes in the constrained films during chemical expansion. The constrained films exhibit anisotropic volume expansion with displacements perpendicular to the substrate plane nearly double that of bulk samples. The PCO films used here generate high total displacements of several 100 nm’s with high reproducibility. Consequently, PCO films are identified to be a potential core component of high-temperature actuators. They benefit not only from high displacements at temperatures where most piezoelectric materials no longer operate while exhibiting, low voltage operation and low energy consumption.


Author(s):  
Isabel Kinski ◽  
Florian Maurer ◽  
Holger Winkler ◽  
Ralf Riedel

AbstractFor the growth of group-III nitride thin films as well as GaN and AlN bulk phases precursors are widely used. Here, we introduce bulk phases of pure GaN, InN and solid solutions of In


2017 ◽  
Vol 43 (10) ◽  
pp. 1222-1225
Author(s):  
V. K. Miloslavsky ◽  
E. N. Kovalenko ◽  
O. N. Yunakova ◽  
N. N. Yunakov

2013 ◽  
Vol 546 ◽  
pp. 138-144 ◽  
Author(s):  
H. Le-Quoc ◽  
S. Béchu ◽  
S. Populoh ◽  
A. Weidenkaff ◽  
A. Lacoste

2011 ◽  
Vol 1314 ◽  
Author(s):  
Elena I. Rogacheva ◽  
Dar’ya S. Orlova ◽  
Mildred S. Dresselhaus ◽  
Shuang Tang

ABSTRACTThe room-temperature dependences of the electrical conductivity σ, Seebeck coefficient S, Hall coefficient RH, and the thermoelectric power factor P on the thickness (d=10–300 nm) of the thin films grown on mica substrates by thermal evaporation in vacuum of Bi-Sb solid solutions crystals with 4.5 at.% Sb were obtained. It was established that an increase in d up to ~ 200 nm leads to a change in kinetic coefficients and that in the thickness dependences of the thermoelectric properties, quantum oscillations were observed. It was shown that the monotonic component of the σ(T) dependence can be satisfactorily approximated by theoretical calculations based on the classical Fuchs - Sondheimer theory. The theoretically estimated period of oscillations is in a good agreement with the experimentally observed period.


2015 ◽  
Vol 3 (11) ◽  
pp. 5901-5907 ◽  
Author(s):  
Paul F. Newhouse ◽  
B. A. Parkinson

The photoelectrochemical, optical, and structural properties of semiconducting spinel oxide solid solutions and mixed phase thin films of Co3−xMxO4[M = (Al, Ga, In)] are investigated as a function the Al : Ga : In alloying ratio and the total Co substitution amount,x.


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