Synthesis of InxGa1–xN solid solutions

AbstractFor the growth of group-III nitride thin films as well as GaN and AlN bulk phases precursors are widely used. Here, we introduce bulk phases of pure GaN, InN and solid solutions of In

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Preparation of the group III nitride thin films AlN, GaN, InN by direct and reactive pulsed laser ablation

International Journal of Photoenergy ◽

10.1155/s1110662x01000137 ◽

2001 ◽

Vol 3 (3) ◽

pp. 111-121 ◽

Cited By ~ 6

Author(s):

Aldo Mele ◽

Anna Giardini ◽

Tonia M. Di Palma ◽

Chiara Flamini ◽

Hideo Okabe ◽

...

Keyword(s):

Thin Films ◽

Laser Ablation ◽

Group Iii Nitrides ◽

X Ray Diffraction ◽

Subsequent Reaction ◽

X Ray ◽

Group Iii ◽

Emission Spectroscopic Analysis ◽

Group Iii Nitride

The methods of preparation of the group III nitrides AlN, GaN, and InN by laser ablation (i.e. laser sputtering), is here reviewed including studies on their properties. The technique, concerns direct ablation of nitride solid targets by laser to produce a plume which is collected on a substrate. Alternatively nitride deposition is obtained as a result of laser ablation of the metal and subsequent reaction in anNH3atmosphere. Optical multichannel emission spectroscopic analysis, and time of flight (TOF) mass spectrometry have been applied forin situidentification of deposition precursors in the plume moving from the target. Epitaxial AlN, GaN, and InN thin films on various substrates have been grown. X-ray diffraction, scanning electron microscopy, have been used to characterise thin films deposited by these methods.

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The role of alloying effects in the formation of electronic structure of unordered Group III nitride solid solutions

Semiconductors ◽

10.1134/1.1682332 ◽

2004 ◽

Vol 38 (3) ◽

pp. 304-309 ◽

Cited By ~ 11

Author(s):

A. V. Voznyy ◽

V. G. Deibuk

Keyword(s):

Electronic Structure ◽

Solid Solutions ◽

Group Iii ◽

Group Iii Nitride ◽

Alloying Effects

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A systematic study on group III-nitride thin films with low temperature deposited via MOCVD

Optical Materials ◽

10.1016/j.optmat.2003.09.007 ◽

2004 ◽

Vol 26 (4) ◽

pp. 417-420 ◽

Cited By ~ 3

Author(s):

Tai-Chang Chen ◽

Mike Johnson ◽

Kunakorn Poochinda ◽

Thomas G Stoebe ◽

N Lawrence Ricker

Keyword(s):

Thin Films ◽

Low Temperature ◽

Systematic Study ◽

Group Iii ◽

Group Iii Nitride

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Some Properties of Group-III Nitride Thin Films Directly Grown on Non-Single-Crystalline Substrates by Using a Molecular Beam Epitaxy Apparatus

Journal of Modern Physics ◽

10.4236/jmp.2015.69134 ◽

2015 ◽

Vol 06 (09) ◽

pp. 1289-1297

Author(s):

Yuichi Sato ◽

Shota Ishizaki ◽

Yoshifumi Murakami ◽

Mohamad Idham ◽

Nur Ain ◽

...

Keyword(s):

Thin Films ◽

Molecular Beam Epitaxy ◽

Molecular Beam ◽

Single Crystalline ◽

Group Iii ◽

Group Iii Nitride

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Substrates and epitaxial deposition processes for Group III-nitride thin films and power device heterostructures

MRS Bulletin ◽

10.1557/mrs.2015.92 ◽

2015 ◽

Vol 40 (5) ◽

pp. 406-411 ◽

Cited By ~ 1

Author(s):

Robert F. Davis

Keyword(s):

Thin Films ◽

Power Device ◽

Group Iii ◽

Epitaxial Deposition ◽

Deposition Processes ◽

Group Iii Nitride ◽

Image Position

Abstract

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Organometallic Chemical Vapor Deposition of Group-III Nitride Thin Films using Single Source Precursors

MRS Proceedings ◽

10.1557/proc-482-39 ◽

1997 ◽

Vol 482 ◽

Author(s):

Roland A. Fischer ◽

Wolfram Rogge

Keyword(s):

Thin Films ◽

Vapor Deposition ◽

Chemical Vapor ◽

Deposition Process ◽

Decomposition Temperature ◽

The Novel ◽

Single Source ◽

Single Source Precursors ◽

Group Iii ◽

Group Iii Nitride

AbstractThe OMCVD of AlN, GaN and InN thin films using the novel single source precursors (N3)2Ga[(CH2)3NMe2] (1), (N3)In[(CH2)3NMe2]2 (2) and (N3)Al(CH2)3NMe2]2 (3) is reported. The compounds are non-pyrophoric. Compound 2 is air stable. No additional N-sources were used for the growth of the nitrides. We achieved epitaxial (AlN, GaN) or polycrystalline (InN) growth at least 200°C below the decomposition temperature of the respective nitride. Some aspects of the reactivity of the precursors with ammonia and the resulting influence on the deposition process were investigated.

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Strong and robust polarization anisotropy of site- and size-controlled single InGaN/GaN quantum wires

Scientific Reports ◽

10.1038/s41598-020-71590-x ◽

2020 ◽

Vol 10 (1) ◽

Author(s):

Hwan-Seop Yeo ◽

Kwanjae Lee ◽

Young Chul Sim ◽

Seoung-Hwan Park ◽

Yong-Hoon Cho

Keyword(s):

Quantum Wire ◽

Quantum Wires ◽

Geometrical Shape ◽

Optical Polarization ◽

Polarization Anisotropy ◽

Single Quantum ◽

Group Iii ◽

Highly Efficient ◽

Group Iii Nitride ◽

Size Controlled

Abstract Optical polarization is an indispensable component in photonic applications, the orthogonality of which extends the degree of freedom of information, and strongly polarized and highly efficient small-size emitters are essential for compact polarization-based devices. We propose a group III-nitride quantum wire for a highly-efficient, strongly-polarized emitter, the polarization anisotropy of which stems solely from its one-dimensionality. We fabricated a site-selective and size-controlled single quantum wire using the geometrical shape of a three-dimensional structure under a self-limited growth mechanism. We present a strong and robust optical polarization anisotropy at room temperature emerging from a group III-nitride single quantum wire. Based on polarization-resolved spectroscopy and strain-included 6-band k·p calculations, the strong anisotropy is mainly attributed to the anisotropic strain distribution caused by the one-dimensionality, and its robustness to temperature is associated with an asymmetric quantum confinement effect.

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