scholarly journals Thin-film chemical expansion of ceria based solid solutions: laser vibrometry study

2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Hendrik Wulfmeier ◽  
Dhyan Kohlmann ◽  
Thomas Defferriere ◽  
Carsten Steiner ◽  
Ralf Moos ◽  
...  

Abstract The chemical expansion of Pr0.1Ce0.9O2–δ (PCO) and CeO2–δ thin films is investigated in the temperature range between 600 °C and 800 °C by laser Doppler vibrometry (LDV). It enables non-contact determination of nanometer scale changes in film thickness at high temperatures. The present study is the first systematic and detailed investigation of chemical expansion of doped and undoped ceria thin films at temperatures above 650 °C. The thin films were deposited on yttria stabilized zirconia substrates (YSZ), operated as an electrochemical oxygen pump, to periodically adjust the oxygen activity in the films, leading to reversible expansion and contraction of the film. This further leads to stresses in the underlying YSZ substrates, accompanied by bending of the overall devices. Film thickness changes and sample bending are found to reach up to 10 and several hundred nanometers, respectively, at excitation frequencies from 0.1 to 10 Hz and applied voltages from 0–0.75 V for PCO and 0–1 V for ceria. At low frequencies, equilibrium conditions are approached. As a consequence maximum thin-film expansion of PCO is expected due to full reduction of the Pr ions. The lower detection limit for displacements is found to be in the subnanometer range. At 800 °C and an excitation frequency of 1 Hz, the LDV shows a remarkable resolution of 0.3 nm which allows, for example, the characterization of materials with small levels of expansion, such as undoped ceria at high oxygen partial pressure. As the correlation between film expansion and sample bending is obtained through this study, a dimensional change of a free body consisting of the same material can be calculated using the high resolution characteristics of this system. A minimum detectable dimensional change of 5 pm is estimated even under challenging high-temperature conditions at 800 °C opening up opportunities to investigate electro-chemo-mechanical phenomena heretofore impossible to investigate. The expansion data are correlated with previous results on the oxygen nonstoichiometry of PCO thin films, and a defect model for bulk ceria solid solutions is adopted to calculate the cation and anion radii changes in the constrained films during chemical expansion. The constrained films exhibit anisotropic volume expansion with displacements perpendicular to the substrate plane nearly double that of bulk samples. The PCO films used here generate high total displacements of several 100 nm’s with high reproducibility. Consequently, PCO films are identified to be a potential core component of high-temperature actuators. They benefit not only from high displacements at temperatures where most piezoelectric materials no longer operate while exhibiting, low voltage operation and low energy consumption.

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 23
Author(s):  
Weiguang Zhang ◽  
Jijun Li ◽  
Yongming Xing ◽  
Xiaomeng Nie ◽  
Fengchao Lang ◽  
...  

SiO2 thin films are widely used in micro-electro-mechanical systems, integrated circuits and optical thin film devices. Tremendous efforts have been devoted to studying the preparation technology and optical properties of SiO2 thin films, but little attention has been paid to their mechanical properties. Herein, the surface morphology of the 500-nm-thick, 1000-nm-thick and 2000-nm-thick SiO2 thin films on the Si substrates was observed by atomic force microscopy. The hardnesses of the three SiO2 thin films with different thicknesses were investigated by nanoindentation technique, and the dependence of the hardness of the SiO2 thin film with its thickness was analyzed. The results showed that the average grain size of SiO2 thin film increased with increasing film thickness. For the three SiO2 thin films with different thicknesses, the same relative penetration depth range of ~0.4–0.5 existed, above which the intrinsic hardness without substrate influence can be determined. The average intrinsic hardness of the SiO2 thin film decreased with the increasing film thickness and average grain size, which showed the similar trend with the Hall-Petch type relationship.


2020 ◽  
Vol 102 (21) ◽  
Author(s):  
Stephan Geprägs ◽  
Björn Erik Skovdal ◽  
Monika Scheufele ◽  
Matthias Opel ◽  
Didier Wermeille ◽  
...  

2014 ◽  
Vol 979 ◽  
pp. 240-243
Author(s):  
Narathon Khemasiri ◽  
Chanunthorn Chananonnawathorn ◽  
Mati Horprathum ◽  
Pitak Eiamchai ◽  
Pongpan Chindaudom ◽  
...  

Tantalum oxide (Ta2O5) thin films were deposited as the protective layers for the metal surface finishing by the DC reactive magnetron sputtering system. The effect of the Ta2O5 film thickness, ranging from 25 nm to 200 nm, on the physical properties and the anti-corrosive performance were investigated. The grazing-incidence X-ray diffraction (GIXRD) and the atomic force microscopy (AFM) were used to examine the crystal structures and the surface topologies of the prepared films, respectively. The XRD results showed that the Ta2O5 thin films were all amorphous. The AFM micrographs demonstrated the film morphology with quite smooth surface features. The surface roughness tended to be rough when the film thickness was increased. To examine the protective performance of the films, the poteniostat and galvanometer was utilized to examine the electrochemical activities with the 1M NaCl as the corrosive electrolyte. The results from the I-V polarization curves (Tafel slope) indicated that, with the Ta2O5 thin film, the current density was significantly reduced by 3 orders of magnitude when compared with the blank sample. Such results were observed because of fully encapsulated surface of the samples were covered with the sputtered Ta2O5 thin films. The study also showed that the Ta2O5 thin film deposited at 50 nm yielded the most extreme protective performance. The Ta2O5 thin films therefore could be optimized for the smallest film thickness for highly potential role in the protective performance of the metal surface finishing products.


2022 ◽  
Author(s):  
Yuxi Ma ◽  
Quan Zhou ◽  
Jason D. Nicholas

The temperature dependence of a Mixed Ionic Electronic Conducting (MIEC) material’s thermo-chemical expansion coefficient, biaxial modulus, and/or Young’s modulus are crucial in determining the internal stress, strain, and/or mechanical stability...


2020 ◽  
Vol 12 (8) ◽  
pp. 1125-1129
Author(s):  
Shrutidhara Sarma

In depth understanding of resistivity of metals is of utmost importance for optimizing circuit designs and electrical systems. In this study, we investigated the relation between film thickness (in the range of 25−350 nm) and film resistivity of Cu thin films, with respect to thin film temperature sensors. The films were deposited in a vacuum deposition chamber over pyrex substrates and the film resistances were measured using 4 point probe technique. The empirical relationship established by Lacy has been used along with our experimental results in order to calculate the constants relating the filmsubstrate compatibility, which influences the change of resistivity with thickness.


Author(s):  
Makio Tamada ◽  
Yuta Sunami

Abstract Mesoporous silica (referred to as MPS), which has pores of hexagonal or cubic structure of several nm to several tens of nm on the surface, is attracting attention as a new material. MPS has a very large specific surface area, so it is used as an adsorbent for gas and water vapor, as a moisture absorbent, and as a separating material. Transparent MPS is also expected to be an optical functional material. MPS thin film is expected to be used as a thin film as an application example. Since MPS thin film can be used in various applications, it will be further developed by mass production. Leads to Therefore, in this study, mass production of MPS thin films and controlled the film thickness was studied. Roll-to-roll (referred to as R2R) production method and a micro gravure printing method was adopted as a method of mass production: transporting polypropylene film and coating on it. As a result, the MPS thin film prepared in this study had a pore structure. it was confirmed that the film thickness could be controlled by changing the peripheral speed ratio. It is considered that the size of the liquid pool between the coating rolls changed. The size and arrangement of the pores could be confirmed by FE-SEM observation.


Optik ◽  
2019 ◽  
Vol 199 ◽  
pp. 163517 ◽  
Author(s):  
Mahsa Etminan ◽  
Nooshin. S. Hosseini ◽  
Narges Ajamgard ◽  
Ataalah Koohian ◽  
Mehdi Ranjbar

2009 ◽  
Vol 60-61 ◽  
pp. 430-434 ◽  
Author(s):  
Xing Li Zhang ◽  
Zhao Wei Sun ◽  
Guo Qiang Wu

In this article, we select corresponding Tersoff potential energy to build potential energy model and investigate the thermal conductivities of single-crystal carbon thin-film. The equilibrium molecular dynamics (EMD) method is used to calculate the nanometer thin film thermal conductivity of diamond crystal at crystal direction (001), and the non-equilibrium molecular dynamics (NEMD) is used to calculate the nanometer thin film thermal conductivity of diamond crystal at crystal direction (111). The results of calculations demonstrate that the nanometer thin film thermal conductivity of diamond crystal is remarkably lower than the corresponding bulk experimental data and increase with increasing the film thickness, and the nanometer thin film thermal conductivity of diamond crystal relates to film thickness linearly in the simulative range. The nanometer thin film thermal conductivity also demonstrates certain regularity with the change of temperature. This work shows that molecular dynamics, applied under the correct conditions, is a viable tool for calculating the thermal conductivity of nanometer thin films.


2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.


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