Superconductivity and electronic properties of layered compounds

1975 ◽  
Vol 116 (7) ◽  
pp. 449 ◽  
Author(s):  
L.N. Bulaevskii
Keyword(s):  
Electronic Properties ◽  
Layered Compounds

Phase Equilibria and Properties of Transparent Conductors in the Indium-Tin-Zinc Oxide System

1997 ◽  
Vol 471 ◽  
Author(s):  
George B. Palmer ◽  
Kenneth R. Poeppelmeier ◽  
Doreen D. Edwards ◽  
Toshihiro Moriga ◽  
Thomas O. Mason ◽  
...  
Keyword(s):  
Electronic Properties ◽  
Industrial Applications ◽  
Oxide System ◽  
Transparent Conductors ◽  
Layered Compounds ◽  
Conducting Oxides ◽  
Optical And Electronic Properties ◽  
Electronic Performance ◽  
Bulk Processing ◽  
Processing Techniques

ABSTRACTSolid state bulk processing techniques were used to synthesize various transparent conducting oxides (TCO's) with In, Zn, and Sn cations. Optical and electronic properties of resultant phase-pure TCO's were compared to each other and to bulk samples of Sn-doped In2O3 (ITO). Reduction and heat treatment showed significant effects on optical and electronic performance, indicating optimization of processing conditions will be required for industrial applications.Comparison of optical and electronic properties in the series of compounds: ZnkIn2O3+k, k = 3,4,5,7,11 revealed trends correlated with the materials’ internal structure. These layered compounds showed improvement of optical properties at higher Zn contents and improvement in conductivity at higher In contents. The trends suggest these materials may be useful for applications where tradeoffs between conductivity and transparency are acceptable.

Structures and Electronic Properties of Graphyne Layers

2016 ◽  
Vol 845 ◽  
pp. 239-242 ◽  
Author(s):  
Tatyana Belenkova ◽  
Vladimir Chernov ◽  
Viktor Mavrinskii
Keyword(s):  
Electronic Properties ◽  
Density Functional ◽  
Layered Compounds ◽  
Mixed Structure ◽  
Generalized Gradient ◽  
Functional Theory ◽  
Energy Characteristics ◽  
Structural Modifications ◽  
The Density Functional Theory ◽  
Basic Layer

Theoretical scheme is proposed for obtaining layered compounds consisting of carbon atoms in the sp-and sp2-hybridized states. This scheme is used to find the possibility of existing the seven basic structural modifications of graphyne: α-, β1-, β2-, β3-, γ1-, γ2-, and γ3-graphyne. The basic structural modifications of graphyne contain diatomic polyyne chains and consist only of carbon atoms in two different crystallographically equivalent states. Other nonbasic structural modifications of graphyne can be formed via the elongation of the carbyne chains and via the formation of graphyne layers with a mixed structure consisting of basic layer fragments. The geometrical optimization of the structure and the calculation of energy characteristics and electronic properties of graphyne layers were performed using ab initio calculations based on the density functional theory in the generalized gradient approximation. The energy of sublimation is found to be maximal for γ graphynes, which should be the most stable structural modifications of graphyne.

Thermoelectric Properties of TiS2 type materials

2003 ◽  
Vol 793 ◽  
Author(s):  
Edward E. Abbott ◽  
Joseph W. Kolis ◽  
Nathan D. Lowhorn ◽  
William Sams ◽  
Terry M Tritt
Keyword(s):  
Electronic Properties ◽  
Room Temperature ◽  
State Of The Art ◽  
Parent Compound ◽  
Vapor Transport ◽  
Layered Compounds ◽  
Synthetic Approach ◽  
Large Power ◽  
Elemental Doping ◽  
Transport Method

ABSTRACTTiS2 belongs to a family of layered compounds that displays promise as a thermoelectric material. At room temperature the thermopower (a) of TiS2 displays an n-type behavior, with a magnitude of ≈ -200 μV/K. The electrical resistivity (ρ), is on the order of 1 mΩ-cm at room temperature and displays a “metallic-like” behavior with dR/dT > 0 from 300 K to 10 K. Thus, these compounds exhibit relatively large power factors (PF = α2/ρ) with a PF ∼30 μW/K2 cm at T = 300 K, which are comparable to the state-of-the art Bi2Te3 type materials, which have a PF ∼40 μW/K2, at T = 330K. These values suggest that further investigations of these systems could be profitable. Thin plate-like crystals of TiS2 are grown by the iodine vapor transport method with planar dimensions of 1 cm and thicknesses of 20 μm or more. In this synthetic approach some dopants can be integrated into the parent compound, effectively providing a route for the tuning of electronic properties. We present here some effects of elemental doping on the electronic properties in these TiS2 based materials.

Electronic Properties of Bi and In Substituted Layered Ba4Pb3O10 Compounds

1998 ◽  
Vol 547 ◽  
Author(s):  
R. Kasal ◽  
J. B. Ulanday ◽  
J. Obien ◽  
B. Jayaram
Keyword(s):  
Electronic Properties ◽  
Carrier Concentration ◽  
Weak Localization ◽  
The Other ◽  
Layered Compounds ◽  
Oxygen Stoichiometry ◽  
Carrier Localization ◽  
X Ray ◽  
Other Hand ◽  
Low Concentrations

AbstractElectronic properties of the layered compounds with the general composition Ban+1(Pb,Bi)nO3n+1 are quite interesting as the crystal structure of these materials is quite similar to that of high-Tc cuprates. We have investigated the effect of Bi and In substitution on the structure, oxygen stoichiometry (carrier concentration) and the electronic properties of Ba4Pb3O10 compounds. The X-ray powder diffraction results indicate that the unit cell symmetry changes from body-centered tetragonal to cubic with the increasing concentration (x) of Bi and In. The oxygen stoichiometry of the materials is found to increase monotonically with the increase in x(Bi). On the other hand it decreased almost linearly with the increasing x(In). Resistivity of the materials is measured as a function of temperature in the temperature region 3-300K. It is found that the room temeprature resistivity increases with increasing x(Bi/In). Since the oxygen stoichiometry values suggest an increase in the carrier concentration with increasing x(Bi/In), it appears that the disorder caused by the substitution at the Pb site has lead to the carrier localization. For x(Bi)<0.2, we found that the resistivity varies as a function of lnT, which is indicative of weak localization. However, at higher concentrations 3D-VRH behavior is observed. On the other hand the resistivity of indium substituted samples show M-I transition, at low concentrations.

Structural properties of GaAs/InGaAs/GaAs (001) and InGaAs/GaAs (001) heterostructures and correlation with electronic properties

1990 ◽  
Vol 48 (4) ◽  
pp. 602-603
Author(s):  
J.M. Bonar ◽  
R. Hull ◽  
R. Malik ◽  
R. Ryan ◽  
J.F. Walker
Keyword(s):  
Band Gap ◽  
Electronic Properties ◽  
Gaas Substrate ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Band Offset ◽  
Misfit Dislocations ◽  
Gaas Substrates ◽  
Gaas Structure ◽  
Low X

In this study we have examined a series of strained heteropeitaxial GaAs/InGaAs/GaAs and InGaAs/GaAs structures, both on (001) GaAs substrates. These heterostructures are potentially very interesting from a device standpoint because of improved band gap properties (InAs has a much smaller band gap than GaAs so there is a large band offset at the InGaAs/GaAs interface), and because of the much higher mobility of InAs. However, there is a 7.2% lattice mismatch between InAs and GaAs, so an InxGa1-xAs layer in a GaAs structure with even relatively low x will have a large amount of strain, and misfit dislocations are expected to form above some critical thickness. We attempt here to correlate the effect of misfit dislocations on the electronic properties of this material.The samples we examined consisted of 200Å InxGa1-xAs layered in a hetero-junction bipolar transistor (HBT) structure (InxGa1-xAs on top of a (001) GaAs buffer, followed by more GaAs, then a layer of AlGaAs and a GaAs cap), and a series consisting of a 200Å layer of InxGa1-xAs on a (001) GaAs substrate.

Electronic properties of two coupled Siδ-doped GaAs structures

2002 ◽  
Vol 21 (2) ◽  
pp. 91-95 ◽  
Author(s):  
E. Ozturk ◽  
H. Sari ◽  
Y. Ergun ◽  
I. Sokmen
Keyword(s):  
Electronic Properties
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