scholarly journals Thermal atomic layer deposition of In2O3 thin films using a homoleptic indium triazenide precursor and water

2021 ◽  
Author(s):  
Pamburayi Mpofu ◽  
Polla Rouf ◽  
Nathan O'Brien ◽  
Urban Forsberg ◽  
Henrik Pedersen
Keyword(s):  
Atomic Layer Deposition ◽  
High Growth ◽  
Atomic Layer ◽  
Optical Transmittance ◽  
Conducting Material ◽  
Transparent Conducting ◽  
Layer Deposition ◽  
High Optical Transmittance ◽  
Low Levels ◽  
Deposited Films

Indium oxide (In2O3) is an important transparent conducting material widely used in optoelectronic applications. Herein, we study the deposition of In2O3 by thermal atomic layer deposition (ALD) using our recently reported indium(III) triazenide precursor and H2O. A temperature interval with self-limiting growth was found between ~270–385°C with a growth per cycle of ~1.0 Å. The deposited films were polycrystalline cubic In2O3 with In/O ratios of ~1.20, and low levels of C and no detectable N impurities. The transmittance of the films was found to be >70% in visible light and the resistivity was found to be 0.2 mΩcm. The high growth rates, low impurities, high optical transmittance, and low resistivity of these films give promise to this process being used for ALD of In2O3 films that are good candidates for potential display and touch-screen applications.

Atomic Layer Deposition of Gallium-Doped Zinc Oxide Transparent Conducting Oxide films

2011 ◽  
Vol 1315 ◽  
Author(s):  
Paul R. Chalker ◽  
Paul A. Marshall ◽  
Simon Romani ◽  
Matthew J. Rosseinsky ◽  
Simon Rushworth ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Film Thickness ◽  
Transparent Conducting Oxide ◽  
Oxide Films ◽  
Atomic Layer ◽  
Contactless Measurement ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Layer Deposition

ABSTRACTThin transparent conducting oxide (TCO) films of gallium-doped zinc oxide have been deposited on glass substrates by atomic layer deposition (ALD) using diethyl zinc, triethyl gallium and water vapour as precursors. The gallium-doped zinc oxide films were deposited over the temperature range 100-350°C. Transmission electron microscopy reveals that the as-deposited films are polycrystalline in character. The electrical resistivity of the gallium-doped zinc oxide films was evaluated using four-point probe and contactless measurement methods as a function of film thickness. The lowest sheet resistance of 16 Ω/☐ was measured from a film thickness of 400nm and a gallium content of 5 atomic percent. The electron Hall mobility of this film was 12.3 cm2/Vs. The visible transmittance of the films was 78% with a haze of 0.2%.

High Growth Rate SiO2 by Atomic Layer Deposition

2019 ◽  
Vol 13 (1) ◽  
pp. 453-457 ◽  
Author(s):  
Raija Matero ◽  
Suvi Haukka ◽  
Marko Tuominen
Keyword(s):  
Growth Rate ◽  
Atomic Layer Deposition ◽  
High Growth ◽  
Atomic Layer ◽  
High Growth Rate ◽  
Layer Deposition

Selective Atomic Layer Deposition of Metals on Graphene for Transparent Conducting Electrode Application

2020 ◽  
Vol 12 (12) ◽  
pp. 14331-14340 ◽  
Author(s):  
Minsu Kim ◽  
Shunichi Nabeya ◽  
Seung-Min Han ◽  
Min-Sik Kim ◽  
Sangbong Lee ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Transparent Conducting Electrode ◽  
Transparent Conducting ◽  
Conducting Electrode ◽  
Layer Deposition

In-situ Activation of a Highly Volatile and Thermally Stable Indium(III) Triazenide Precursor for Epitaxial Growth of Indium Nitride by Atomic Layer Deposition

2019 ◽  
Author(s):  
Nathan O'Brien ◽  
Polla Rouf ◽  
Rouzbeh Samii ◽  
Karl Rönnby ◽  
Sydney C. Buttera ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Indium Nitride ◽  
Atomic Layer ◽  
Reaction Chamber ◽  
Single Step ◽  
Thermally Stable ◽  
Layer Deposition ◽  
In Situ Activation ◽  
Low Levels

Indium nitride (InN) is characterised by its superb electron mobility making it a ground-breaking material for high frequency electronics. The difficulty of depositing highquality crystalline InN currently impedes its broad implementation in electronic devices. Herein, we report a new highly volatile and thermally stable In(III) triazenide precursor and demonstrate its ability to deposit high-quality epitaxial hexagonal InN by atomic layer deposition (ALD). The new triazenide precursor was found to sublime at 80 °C and thermogravimetric analysis showed single step volatilisation with an onset temperature of 145 °C and negligible residual mass. Strikingly, two temperature intervals were observed when depositing InN films. In the high temperature interval, the precursor underwent thermal decomposition inside the ALD reaction chamber to produce a more reactive indium compound whilst retaining self-limiting growth behaviour. Stochiometric InN films with very low levels of impurities were grown epitaxially on 4H-SiC. This new triazenide precursor now enables ALD of InN for semi-conductor applications.<br>

Sign in / Sign up

Export Citation Format

Share Document