scholarly journals Atomic layer stacking structure and negative uniaxial magnetocrystalline anisotropy of Co100^|^minus;xIrx sputtered films

2013 ◽  
Vol 37 (3-2) ◽  
pp. 183-189 ◽  
Author(s):  
N. Nozawa ◽  
S. Saito ◽  
T. Kimura ◽  
K. Shibuya ◽  
K. Hoshino ◽  
...  
Keyword(s):  
Magnetocrystalline Anisotropy ◽  
Atomic Layer ◽  
Sputtered Films ◽  
Layer Stacking ◽  
Stacking Structure

Compositional modulated atomic layer stacking and uniaxial magnetocrystalline anisotropy of CoPt alloy sputtered films with close-packed plane orientation

2015 ◽  
Vol 117 (17) ◽  
pp. 17C753 ◽  
Author(s):  
Shin Saito ◽  
Naoki Nozawa ◽  
Shintaro Hinata ◽  
Migaku Takahashi ◽  
Kazunari Shibuya ◽  
...  
Keyword(s):  
Magnetocrystalline Anisotropy ◽  
Atomic Layer ◽  
Close Packed Plane ◽  
Sputtered Films ◽  
Plane Orientation ◽  
Layer Stacking

scholarly journals MXenes atomic layer stacking phase transitions and their chemical activity consequences

2020 ◽  
Vol 4 (5) ◽  
Author(s):  
José D. Gouveia ◽  
Francesc Viñes ◽  
Francesc Illas ◽  
José R. B. Gomes
Keyword(s):  
Phase Transitions ◽  
Atomic Layer ◽  
Chemical Activity ◽  
Layer Stacking

scholarly journals Optimal n-Type Al-Doped ZnO Overlayers for Charge Transport Enhancement in p-Type Cu2O Photocathodes

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 338
Author(s):  
Hak Hyeon Lee ◽  
Dong Su Kim ◽  
Ji Hoon Choi ◽  
Young Been Kim ◽  
Sung Hyeon Jung ◽  
...  
Keyword(s):  
Charge Transport ◽  
Atomic Layer ◽  
Absorption Efficiency ◽  
Open Circuit ◽  
Band Alignment ◽  
Conformal Coating ◽  
Layer Deposition ◽  
Layer Stacking ◽  
Doped Zno ◽  
P Type

An effective strategy for improving the charge transport efficiency of p-type Cu2O photocathodes is the use of counter n-type semiconductors with a proper band alignment, preferably using Al-doped ZnO (AZO). Atomic layer deposition (ALD)-prepared AZO films show an increase in the built-in potential at the Cu2O/AZO interface as well as an excellent conformal coating with a thin thickness on irregular Cu2O. Considering the thin thickness of the AZO overlayers, it is expected that the composition of the Al and the layer stacking sequence in the ALD process will significantly influence the charge transport behavior and the photoelectrochemical (PEC) performance. We designed various stacking orders of AZO overlayers where the stacking layers consisted of Al2O3 (or Al) and ZnO using the atomically controlled ALD process. Al doping in ZnO results in a wide bandgap and does not degrade the absorption efficiency of Cu2O. The best PEC performance was obtained for the sample with an AZO overlayer containing conductive Al layers in the bottom and top regions. The Cu2O/AZO/TiO2/Pt photoelectrode with this overlayer exhibits an open circuit potential of 0.63 V and maintains a high cathodic photocurrent value of approximately −3.2 mA cm−2 at 0 VRHE for over 100 min.

Soft Magnetic Properties and Microstructures for the Fe Based Sputtered Films with High Bs

1991 ◽  
Vol 232 ◽  
Author(s):  
Migaku Takahashi ◽  
T. Shimatsu
Keyword(s):  
Magnetic Anisotropy ◽  
Magnetocrystalline Anisotropy ◽  
Film Plane ◽  
Initial Permeability ◽  
Physical Origin ◽  
Soft Magnetic ◽  
Magnetic Anisotropy Energy ◽  
Local Anisotropy ◽  
Sputtered Films ◽  
Sufficient Reduction

ABSTRACTPhysical origin of high initial permeability, μi, in Fe based films with large magnetocrystalline anisotropy and magnetostriction is systematically discussed in connection with the microstructure of the films. In order to decrease the local anisotropy fluctuation to determine μi in these films, decrease of effective magnetic anisotropy, Ueff, of each grain mainly caused by the sufficient reduction of grain size is required. Induced uniaxial magnetic anisotropy energy, Ku, in film plane plays an important role to decrease Ueff through the micromagnetic interaction. The ratio of Ueff /Ku proposed as the important key to analyse the magnetization process. The dependence of μi Ku is classified concerning for Ueff/Ku.

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